BE519804A - - Google Patents

Info

Publication number
BE519804A
BE519804A BE519804DA BE519804A BE 519804 A BE519804 A BE 519804A BE 519804D A BE519804D A BE 519804DA BE 519804 A BE519804 A BE 519804A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE519804A publication Critical patent/BE519804A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B3/00Line transmission systems
    • H04B3/02Details
    • H04B3/04Control of transmission; Equalising
    • H04B3/16Control of transmission; Equalising characterised by the negative-impedance network used
    • H04B3/18Control of transmission; Equalising characterised by the negative-impedance network used wherein the network comprises semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Bipolar Transistors (AREA)
BE519804D 1952-05-09 BE519804A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US286914A US2663806A (en) 1952-05-09 1952-05-09 Semiconductor signal translating device

Publications (1)

Publication Number Publication Date
BE519804A true BE519804A (pt)

Family

ID=23100702

Family Applications (1)

Application Number Title Priority Date Filing Date
BE519804D BE519804A (pt) 1952-05-09

Country Status (4)

Country Link
US (1) US2663806A (pt)
BE (1) BE519804A (pt)
FR (1) FR1074866A (pt)
GB (1) GB737506A (pt)

Families Citing this family (122)

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US3138721A (en) * 1959-05-06 1964-06-23 Texas Instruments Inc Miniature semiconductor network diode and gate
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
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US3097309A (en) * 1959-06-02 1963-07-09 Clevite Corp Junction transistors used to approximate non-linear functions
US3040195A (en) * 1959-07-02 1962-06-19 Gen Precision Inc Bistable multivibrator employing pnpn switching diodes
US3230398A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Integrated structure semiconductor network forming bipolar field effect transistor
DE1225714B (de) * 1960-08-26 1966-09-29 Charbonnages De France Transistorisiere Modulationsschaltung mit Vorverstaerker fuer die Modulationsspannung
US3173069A (en) * 1961-02-15 1965-03-09 Westinghouse Electric Corp High gain transistor
US3142021A (en) * 1961-02-27 1964-07-21 Westinghouse Electric Corp Monolithic semiconductor amplifier providing two amplifier stages
US3210561A (en) * 1961-05-03 1965-10-05 Sylvania Electric Prod Compound transistor circuits
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
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US3332028A (en) * 1964-04-29 1967-07-18 Garrett Corp Dynamic bandpass filter amplifier having multiple feedback paths
US3446988A (en) * 1964-12-25 1969-05-27 Honeywell Inc Transistorized safety switch
US3428854A (en) * 1965-05-14 1969-02-18 Rca Corp Temperature compensation of deflection circuits
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US3500140A (en) * 1967-06-19 1970-03-10 Hitachi Ltd Multichannel integrated devices consisting of darlington circuits
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US4380795A (en) * 1981-03-24 1983-04-19 The United States Of America As Represented By The United States Department Of Energy Base drive circuit for a four-terminal power Darlington
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US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US6271721B1 (en) 1999-06-23 2001-08-07 Christopher Trask Common-base transistor amplifiers with linearity augmentation
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US6842075B2 (en) * 2001-06-06 2005-01-11 Anadigics, Inc. Gain block with stable internal bias from low-voltage power supply
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US7161429B2 (en) * 2003-12-18 2007-01-09 International Business Machines Corporation Multi-port cross-connected multi-level cascode differential amplifier
US20050285569A1 (en) * 2004-06-28 2005-12-29 Samantha Rao Power conversion system and method
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US7701303B2 (en) * 2006-12-29 2010-04-20 Infineon Technologies Ag Oscillator with Darlington nodes
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US8848337B2 (en) 2011-02-01 2014-09-30 John R. Koza Signal processing devices having one or more memristors
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US12015062B2 (en) 2019-10-24 2024-06-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrated circuit

Family Cites Families (6)

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NL75792C (pt) * 1948-05-19
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2585078A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Negative resistance device utilizing semiconductor amplifier
US2595497A (en) * 1949-01-22 1952-05-06 Rca Corp Semiconductor device for two-stage amplifiers
US2595496A (en) * 1949-01-22 1952-05-06 Rca Corp Cascade-connected semiconductor amplifier
US2586080A (en) * 1949-10-11 1952-02-19 Bell Telephone Labor Inc Semiconductive signal translating device

Also Published As

Publication number Publication date
US2663806A (en) 1953-12-22
FR1074866A (fr) 1954-10-11
GB737506A (en) 1955-09-28

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