Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
  • H10D48/01—Manufacture or treatment
  • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
  • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
  • H10D48/046—Provision of discrete insulating layers
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
  • G01S7/04—Display arrangements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
  • H10D48/01—Manufacture or treatment
  • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
  • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
  • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
  • H10P14/2901—Materials
  • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
  • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
  • H10P14/3428—Sulfides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
  • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

• Engineering & Computer Science (AREA)
• Computer Networks & Wireless Communication (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Radar, Positioning & Navigation (AREA)
• Remote Sensing (AREA)
• Photoreceptors In Electrophotography (AREA)
• Battery Electrode And Active Subsutance (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=26710470

Family Applications (1)

Country Status (4)

Families Citing this family (3)

Family Cites Families (1)

• 0
  • FR FR963374D patent/FR963374A/fr not_active Expired
  • BE BE481153D patent/BE481153A/xx unknown
• 1948
  • 1948-01-29 GB GB2695/48A patent/GB632135A/en not_active Expired
  • 1948-06-19 US US34043A patent/US2498240A/en not_active Expired - Lifetime

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