BE454817A - - Google Patents

Info

Publication number
BE454817A
BE454817A BE454817DA BE454817A BE 454817 A BE454817 A BE 454817A BE 454817D A BE454817D A BE 454817DA BE 454817 A BE454817 A BE 454817A
Authority
BE
Belgium
Prior art keywords
zone
furnace
point
zones
low frequency
Prior art date
Application number
Other languages
English (en)
French (fr)
Publication of BE454817A publication Critical patent/BE454817A/fr

Links

Landscapes

  • Manufacture And Refinement Of Metals (AREA)
  • Furnace Details (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
BE454817D BE454817A (enrdf_load_html_response)

Publications (1)

Publication Number Publication Date
BE454817A true BE454817A (enrdf_load_html_response)

Family

ID=108888

Family Applications (1)

Application Number Title Priority Date Filing Date
BE454817D BE454817A (enrdf_load_html_response)

Country Status (1)

Country Link
BE (1) BE454817A (enrdf_load_html_response)

Similar Documents

Publication Publication Date Title
Zhang et al. One-dimensional growth mechanism of crystalline silicon nanowires
US2169893A (en) Cooling means for continuous casting apparatus
US3393054A (en) Pulling nozzle for oriented pulling of semiconductor crystals from a melt
CN103551757B (zh) 钎焊用铝硅合金无缝药芯焊丝、制备及应用
Kinoshita et al. Growth of homogeneous mixed crystals of In0. 3Ga0. 7As by the traveling liquidus-zone method
Azuma et al. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system
BE454817A (enrdf_load_html_response)
US3040427A (en) Method of uniting copper and aluminum tubes
Angurel et al. Growth rate effects on thin Bi2Sr2CaCu2O8+ δ textured rods
US2135465A (en) Continuous casting of metal shapes
FR2539144A1 (fr) Chenal d'ecoulement de laitier fondu provenant d'un haut fourneau
Kinoshita et al. Si0. 5Ge0. 5 bulk single crystals with uniform composition
Menzel et al. Float-zone growth of silicon crystals using large-area seeding
Liu et al. Lamellar orientation control of Ti–47Al–0.5 W–0.5 Si by directional solidification using β seeding technique
US2295474A (en) Heating-furnace work-carrying skid
Kinoshita et al. Homogeneous Si0. 5Ge0. 5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method
Kaya et al. Eutectic growth of unidirectionally solidified bismuth–cadmium alloy
Yoon et al. Numerical simulation of scanning speed and supercooling effects during zone-melting-recrystallization of SOI wafers
WO2002039070A2 (fr) Canne de mesure de niveau d'un bain en fusion
US4545848A (en) HCT Crystal growth method
Arivanandhan et al. Growth of Si1− xGex bulk crystals with highly homogeneous composition for thermoelectric applications
Liu et al. Tuning anisotropic grain growth and high-temperature deformation in TiAl alloys via directional annealing: role of hot zone migration rate and 3D twin networks
WO2013151061A1 (ja) チタンまたはチタン合金からなる鋳塊の連続鋳造用の鋳型およびこれを備えた連続鋳造装置
DE3714139A1 (de) Stranggiessvorrichtung
US4046617A (en) Method of crystallization