BE415724A - - Google Patents
Info
- Publication number
- BE415724A BE415724A BE415724DA BE415724A BE 415724 A BE415724 A BE 415724A BE 415724D A BE415724D A BE 415724DA BE 415724 A BE415724 A BE 415724A
- Authority
- BE
- Belgium
- Prior art keywords
- layer
- electrode
- rectifier
- barrier layer
- contact
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims description 2
- PGWMQVQLSMAHHO-UHFFFAOYSA-N sulfanylidenesilver Chemical compound [Ag]=S PGWMQVQLSMAHHO-UHFFFAOYSA-N 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 150000002926 oxygen Chemical class 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910000634 wood's metal Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Laminated Bodies (AREA)
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE415724A true BE415724A (cg-RX-API-DMAC7.html) |
Family
ID=78799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE415724D BE415724A (cg-RX-API-DMAC7.html) |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE415724A (cg-RX-API-DMAC7.html) |
-
0
- BE BE415724D patent/BE415724A/fr unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69734131T2 (de) | Zweischichtige elektroneninjektionselektrode zur verwendung in einer elektrolumineszenzvorrichtung | |
| AU2018205118A1 (en) | Enhanced adhesion of seed layer for solar cell conductive contact | |
| TW588389B (en) | Quantum device | |
| RU2457584C2 (ru) | Органическое светоизлучающее устройство с анодированной металлизацией | |
| WO2009144086A1 (fr) | Substrat en verre portant une electrode | |
| WO2007138527A2 (en) | Reflective electrode for a semiconductor light emitting apparatus | |
| EP0002550B1 (fr) | Procédé de création, par sérigraphie, d'un contact à la surface d'un corps semiconducteur et dispositif obtenu par ce procédé | |
| CA2732559C (fr) | Elaboration de couche d'oxyde transparente et conductrice pour utilisation dans une structure photovoltaique | |
| FR2462011A1 (fr) | Procede pour ameliorer les contacts d'interrupteurs, contact obtenu par ce procede et interrupteur s'y rapportant | |
| BE415724A (cg-RX-API-DMAC7.html) | ||
| JP5672329B2 (ja) | スイッチング素子 | |
| FR2517921A1 (fr) | Dispositif electroluminescent et son procede d'obtention | |
| JP4842289B2 (ja) | ホール注入電極と該電極を用いた有機ｅｌ素子 | |
| WO2014013183A1 (fr) | Electrode supportee transparente pour oled | |
| FR2932611A1 (fr) | Cellule photovoltaique et substrat de cellule photovoltaique | |
| WO2017064384A1 (fr) | Procede de fabrication d'une cellule photovoltaique a heterojonction | |
| CH633739A5 (en) | Electrode in the form of a wire for cutting a metal workpiece by electrical discharge (spark erosion) | |
| JP5277524B2 (ja) | スイッチング素子 | |
| FR2573249A1 (fr) | Procede pour la preparation d'elements semi-conducteurs a couches minces, et en particulier de cellules solaires | |
| Kim et al. | In-situ determination of interface dipole energy between tris (8-hydroxyquinoline) aluminum and MgO coated Al in inverted top-emitting organic light-emitting diodes | |
| Hashida et al. | Carbon-nanotube cathode modified by femtosecond laser ablation | |
| EP2430676B1 (en) | Method of manufacturing electrical contacts on organic semiconductors | |
| EP0026949A1 (fr) | Electrode à émission secondaire, notamment pour photomultiplicateur | |
| BE420935A (cg-RX-API-DMAC7.html) | ||
| BE416710A (cg-RX-API-DMAC7.html) |