BE405202A - - Google Patents
Info
- Publication number
- BE405202A BE405202A BE405202DA BE405202A BE 405202 A BE405202 A BE 405202A BE 405202D A BE405202D A BE 405202DA BE 405202 A BE405202 A BE 405202A
- Authority
- BE
- Belgium
- Prior art keywords
- barrier layer
- electrode
- layer
- selenium
- semiconductor
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 23
- 229910052711 selenium Inorganic materials 0.000 description 23
- 239000011669 selenium Substances 0.000 description 23
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 9
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 8
- 229940112669 cuprous oxide Drugs 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910001369 Brass Inorganic materials 0.000 description 6
- 239000010951 brass Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WALCGGIJOOWJIN-UHFFFAOYSA-N iron(ii) selenide Chemical group [Se]=[Fe] WALCGGIJOOWJIN-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 210000000056 organ Anatomy 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DCXXMTOCNZCJGO-UHFFFAOYSA-N Glycerol trioctadecanoate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PTISTKLWEJDJID-UHFFFAOYSA-N sulfanylidenemolybdenum Chemical compound [Mo]=S PTISTKLWEJDJID-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE405202A true BE405202A (en:Method) |
Family
ID=70423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE405202D BE405202A (en:Method) |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE405202A (en:Method) |
-
0
- BE BE405202D patent/BE405202A/fr unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101685845B (zh) | 半导体薄膜的形成方法以及电子设备的制造方法 | |
| EP0496672B1 (fr) | Capteur pour la détection d'espèces chimiques ou de photons utilisant un transistor à effet de champ | |
| FR2508708A1 (fr) | Procede electrolytique d'elimination des courts-circuits et des shunts dans les cellules solaires | |
| EP3025381B1 (fr) | Procede de fabrication d'un module thermoelectrique a base de film polymere | |
| BE405202A (en:Method) | ||
| JP2010219114A (ja) | 炭素電極及び炭素電極の製造方法、有機トランジスタ及び有機トランジスタの製造方法 | |
| FR2577668A1 (fr) | Procede de realisation d'un detecteur photoelectrique du type photoresistance de grande sensibilite | |
| CH341885A (fr) | Résistance électrique et procédé pour sa fabrication | |
| JP2008016227A (ja) | 有機光起電力素子およびその製造方法ならびに光センサー | |
| Dutta et al. | Electronic conduction processes in DNA-doped polypyrrole nanocomposite films | |
| FR2524717A1 (fr) | Batterie de piles photovoltaiques au silicium amorphe | |
| US20250236523A1 (en) | Manufacturing method of laser-induced graphene and laser-induced graphene manufactured thereby | |
| CH118322A (fr) | Elément redresseur de courants alternatifs et procédé pour sa fabrication. | |
| BE522000A (en:Method) | ||
| CH119067A (fr) | Procédé pour la fabrication d'un élément redresseur de courant alternatif et élément redresseur obtenu d'après ce procédé. | |
| BE416676A (en:Method) | ||
| BE395050A (en:Method) | ||
| BE332315A (en:Method) | ||
| BE514930A (en:Method) | ||
| CH165274A (fr) | Dispositif redresseur de courant. | |
| BE560540A (en:Method) | ||
| BE508382A (en:Method) | ||
| Kim et al. | Enhancement of the Stability of Capacitance–Voltage Characteristics of Hg1-xZnxTe–Based Metal–Insulator–Semiconductor Capacitors by Voltage Annealing | |
| CH132459A (fr) | Cellule photoélectrique et procédé pour sa fabrication. | |
| Shen et al. | Fabrication and electrical properties of a Cu–tetracyanoquinodimethane nanowire array ina porous anodic alumina template |