H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
H10D48/01—Manufacture or treatment
H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
H10D48/071—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate or reduction treatment
H10D48/074—Oxidation and subsequent heat treatment of the foundation plate
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
H10P14/34—Deposited materials, e.g. layers
H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials