AU6060599A - Magnetoresistive devices, giant magnetoresistive devices and methods for making same - Google Patents
Magnetoresistive devices, giant magnetoresistive devices and methods for making same Download PDFInfo
- Publication number
- AU6060599A AU6060599A AU60605/99A AU6060599A AU6060599A AU 6060599 A AU6060599 A AU 6060599A AU 60605/99 A AU60605/99 A AU 60605/99A AU 6060599 A AU6060599 A AU 6060599A AU 6060599 A AU6060599 A AU 6060599A
- Authority
- AU
- Australia
- Prior art keywords
- accordance
- layer
- electrodeposited
- copper
- pole piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 74
- 239000000758 substrate Substances 0.000 claims description 110
- 239000011248 coating agent Substances 0.000 claims description 108
- 238000000576 coating method Methods 0.000 claims description 108
- 239000010949 copper Substances 0.000 claims description 98
- 229910052802 copper Inorganic materials 0.000 claims description 89
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 88
- 239000000463 material Substances 0.000 claims description 74
- 230000005291 magnetic effect Effects 0.000 claims description 70
- 239000007769 metal material Substances 0.000 claims description 67
- 239000003302 ferromagnetic material Substances 0.000 claims description 59
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 51
- 239000011521 glass Substances 0.000 claims description 46
- 229910045601 alloy Inorganic materials 0.000 claims description 45
- 239000000956 alloy Substances 0.000 claims description 45
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 39
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 34
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 34
- 239000000523 sample Substances 0.000 claims description 34
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 26
- 239000011149 active material Substances 0.000 claims description 24
- 238000004070 electrodeposition Methods 0.000 claims description 24
- 229910017052 cobalt Inorganic materials 0.000 claims description 22
- 239000010941 cobalt Substances 0.000 claims description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 22
- 229910052742 iron Inorganic materials 0.000 claims description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052804 chromium Inorganic materials 0.000 claims description 17
- 239000011651 chromium Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- 229910000889 permalloy Inorganic materials 0.000 claims description 15
- 229910018054 Ni-Cu Inorganic materials 0.000 claims description 12
- 229910018481 Ni—Cu Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 229910003437 indium oxide Inorganic materials 0.000 claims description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 229910020630 Co Ni Inorganic materials 0.000 claims description 7
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910020598 Co Fe Inorganic materials 0.000 claims description 5
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 5
- 229910020707 Co—Pt Inorganic materials 0.000 claims description 5
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 5
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 claims description 5
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 5
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 description 27
- 239000010409 thin film Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229910001004 magnetic alloy Inorganic materials 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- 229910015400 FeC13 Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- WLQXLCXXAPYDIU-UHFFFAOYSA-L cobalt(2+);disulfamate Chemical compound [Co+2].NS([O-])(=O)=O.NS([O-])(=O)=O WLQXLCXXAPYDIU-UHFFFAOYSA-L 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001325 element alloy Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- -1 oxide Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005316 response function Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- SQZYOZWYVFYNFV-UHFFFAOYSA-L iron(2+);disulfamate Chemical compound [Fe+2].NS([O-])(=O)=O.NS([O-])(=O)=O SQZYOZWYVFYNFV-UHFFFAOYSA-L 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002074 melt spinning Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002070 thin film alloy Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10159998P | 1998-09-24 | 1998-09-24 | |
| US60101599 | 1998-09-24 | ||
| PCT/US1999/022266 WO2000017863A1 (en) | 1998-09-24 | 1999-09-24 | Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU6060599A true AU6060599A (en) | 2000-04-10 |
Family
ID=22285495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU60605/99A Abandoned AU6060599A (en) | 1998-09-24 | 1999-09-24 | Magnetoresistive devices, giant magnetoresistive devices and methods for making same |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1125288A1 (xx) |
| JP (1) | JP2002525859A (xx) |
| CN (1) | CN1319225A (xx) |
| AU (1) | AU6060599A (xx) |
| CA (1) | CA2345390A1 (xx) |
| IL (1) | IL141859A0 (xx) |
| TW (1) | TW468168B (xx) |
| WO (1) | WO2000017863A1 (xx) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7715141B2 (en) * | 2007-03-09 | 2010-05-11 | International Business Machines Corporation | Shield biasing for MR devices |
| WO2012008824A1 (en) * | 2010-07-16 | 2012-01-19 | Mimos Berhad | Method for use in electro depositing |
| US9201125B2 (en) * | 2010-10-08 | 2015-12-01 | Muller Martini Holding Ag | Device for the continuous quality control of applied elements |
| JP6354084B2 (ja) * | 2013-04-16 | 2018-07-11 | メック株式会社 | エッチング液、補給液、及び配線形成方法 |
| US9857438B2 (en) * | 2015-04-20 | 2018-01-02 | Infineon Technologies Ag | Magnetoresistive devices |
| GB2545703B (en) * | 2015-12-22 | 2019-01-09 | Univ Sheffield | Apparatus and methods for determining force applied to the tip of a probe |
| CN110165840B (zh) * | 2018-02-13 | 2021-11-26 | 通用电气公司 | 具有磁性部件的发动机及形成和使用该磁性部件的方法 |
| TWI747285B (zh) * | 2019-05-27 | 2021-11-21 | 愛盛科技股份有限公司 | 磁場感測裝置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3355727A (en) * | 1963-07-24 | 1967-11-28 | Donald C Gaubatz | Shield utilized as flux path for magnetic head |
| FR2658647B1 (fr) * | 1990-02-21 | 1992-04-30 | Commissariat Energie Atomique | Tete magnetique horizontale a effet hall et son procede de realisation. |
| NL9000546A (nl) * | 1990-03-09 | 1991-10-01 | Philips Nv | Werkwijze voor het vervaardigen van een dunnefilm magneetkop alsmede een dunnefilm magneetkop vervaardigbaar volgens de werkwijze. |
| US5277991A (en) * | 1991-03-08 | 1994-01-11 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive materials |
-
1999
- 1999-09-24 EP EP99969526A patent/EP1125288A1/en not_active Withdrawn
- 1999-09-24 IL IL14185999A patent/IL141859A0/xx unknown
- 1999-09-24 CN CN99811240.2A patent/CN1319225A/zh active Pending
- 1999-09-24 CA CA002345390A patent/CA2345390A1/en not_active Abandoned
- 1999-09-24 WO PCT/US1999/022266 patent/WO2000017863A1/en not_active Application Discontinuation
- 1999-09-24 AU AU60605/99A patent/AU6060599A/en not_active Abandoned
- 1999-09-24 JP JP2000571443A patent/JP2002525859A/ja active Pending
- 1999-09-27 TW TW088116494A patent/TW468168B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002525859A (ja) | 2002-08-13 |
| WO2000017863A1 (en) | 2000-03-30 |
| CA2345390A1 (en) | 2000-03-30 |
| CN1319225A (zh) | 2001-10-24 |
| IL141859A0 (en) | 2002-03-10 |
| TW468168B (en) | 2001-12-11 |
| EP1125288A1 (en) | 2001-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1 | Application lapsed section 142(2)(a) - no request for examination in relevant period |