AU5964196A - Spring element electrical contact and methods - Google Patents

Spring element electrical contact and methods

Info

Publication number
AU5964196A
AU5964196A AU59641/96A AU5964196A AU5964196A AU 5964196 A AU5964196 A AU 5964196A AU 59641/96 A AU59641/96 A AU 59641/96A AU 5964196 A AU5964196 A AU 5964196A AU 5964196 A AU5964196 A AU 5964196A
Authority
AU
Australia
Prior art keywords
methods
electrical contact
spring element
element electrical
spring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU59641/96A
Inventor
Thomas H Dozier
Gary W Grube
Igor Y. Khandros
Gaetan L Mathieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FormFactor Inc
Original Assignee
FormFactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/452,255 external-priority patent/US6336269B1/en
Priority claimed from US08/533,584 external-priority patent/US5772451A/en
Priority claimed from US08/554,902 external-priority patent/US5974662A/en
Priority claimed from PCT/US1995/014909 external-priority patent/WO1996017378A1/en
Priority claimed from US08/558,332 external-priority patent/US5829128A/en
Application filed by FormFactor Inc filed Critical FormFactor Inc
Publication of AU5964196A publication Critical patent/AU5964196A/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
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    • H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
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    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
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  • Measuring Leads Or Probes (AREA)
AU59641/96A 1995-05-26 1996-05-28 Spring element electrical contact and methods Abandoned AU5964196A (en)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US08/452,255 US6336269B1 (en) 1993-11-16 1995-05-26 Method of fabricating an interconnection element
US452255 1995-05-26
US52624695A 1995-09-21 1995-09-21
US526246 1995-09-21
US533584 1995-10-18
US08/533,584 US5772451A (en) 1993-11-16 1995-10-18 Sockets for electronic components and methods of connecting to electronic components
US08/554,902 US5974662A (en) 1993-11-16 1995-11-09 Method of planarizing tips of probe elements of a probe card assembly
US554902 1995-11-09
PCT/US1995/014909 WO1996017378A1 (en) 1994-11-15 1995-11-13 Electrical contact structures from flexible wire
WOUS9514909 1995-11-13
US558332 1995-11-15
US08/558,332 US5829128A (en) 1993-11-16 1995-11-15 Method of mounting resilient contact structures to semiconductor devices
US1224096P 1996-02-22 1996-02-22
US012240 1996-02-22
PCT/US1996/008275 WO1996037931A1 (en) 1995-05-26 1996-05-28 Spring element electrical contact and methods

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815961B2 (en) 1999-07-28 2004-11-09 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7772860B2 (en) 1999-05-27 2010-08-10 Nanonexus, Inc. Massively parallel interface for electronic circuit
US7872482B2 (en) 2000-05-23 2011-01-18 Verigy (Singapore) Pte. Ltd High density interconnect system having rapid fabrication cycle
US7952373B2 (en) * 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6442831B1 (en) 1993-11-16 2002-09-03 Formfactor, Inc. Method for shaping spring elements
US6836962B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
WO2000014558A1 (en) * 1998-09-09 2000-03-16 Spire Technologies Pte Ltd. Interface device between testing equipment and integrated circuit
TWI735240B (en) * 2020-05-26 2021-08-01 中華精測科技股份有限公司 Probe device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1292459A (en) * 1968-12-09 1972-10-11 Ericsson Telefon Ab L M Wire
US4025143A (en) * 1975-06-10 1977-05-24 Rozmus John J Electrical contacts
US4354310A (en) * 1979-03-22 1982-10-19 Hatton Richard L Method of making inductance
US5129143A (en) * 1982-11-29 1992-07-14 Amp Incorporated Durable plating for electrical contact terminals
JPS59205105A (en) * 1983-05-07 1984-11-20 住友電気工業株式会社 Conductive composite material
AT385932B (en) * 1985-12-13 1988-06-10 Neumayer Karl BAND OR WIRE SHAPED MATERIAL
US5059143A (en) * 1988-09-08 1991-10-22 Amp Incorporated Connector contact
NL9001347A (en) * 1990-06-14 1992-01-02 Burndy Electra Nv CONTACT COMPOSITION.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772860B2 (en) 1999-05-27 2010-08-10 Nanonexus, Inc. Massively parallel interface for electronic circuit
US7884634B2 (en) 1999-05-27 2011-02-08 Verigy (Singapore) Pte, Ltd High density interconnect system having rapid fabrication cycle
US6815961B2 (en) 1999-07-28 2004-11-09 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
US7872482B2 (en) 2000-05-23 2011-01-18 Verigy (Singapore) Pte. Ltd High density interconnect system having rapid fabrication cycle
US7952373B2 (en) * 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies

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