AU586279B2 - Laser device - Google Patents
Laser deviceInfo
- Publication number
- AU586279B2 AU586279B2 AU62655/86A AU6265586A AU586279B2 AU 586279 B2 AU586279 B2 AU 586279B2 AU 62655/86 A AU62655/86 A AU 62655/86A AU 6265586 A AU6265586 A AU 6265586A AU 586279 B2 AU586279 B2 AU 586279B2
- Authority
- AU
- Australia
- Prior art keywords
- laser device
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853534744 DE3534744A1 (de) | 1985-09-28 | 1985-09-28 | Laservorrichtung mit stabilisierter ausgangsleistung |
DE3534744 | 1985-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU6265586A AU6265586A (en) | 1987-04-02 |
AU586279B2 true AU586279B2 (en) | 1989-07-06 |
Family
ID=6282285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU62655/86A Ceased AU586279B2 (en) | 1985-09-28 | 1986-09-15 | Laser device |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU586279B2 (de) |
DE (1) | DE3534744A1 (de) |
GB (1) | GB2180985B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890002811B1 (ko) * | 1986-11-04 | 1989-07-31 | 삼성전자 주식회사 | 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지 |
DE3907423C2 (de) * | 1989-03-08 | 1993-12-16 | Kommunikations Elektronik | Schaltungsanordnung zur Übertragung von optischen Signalen über Lichtwellenleiter |
DE4026087C2 (de) * | 1990-08-17 | 1996-12-12 | Hell Ag Linotype | Verfahren und Schaltungsanordnung zur Ansteuerung einer Laserdiode |
US5140605A (en) * | 1991-06-27 | 1992-08-18 | Xerox Corporation | Thermally stabilized diode laser structure |
JP3518834B2 (ja) * | 1996-12-14 | 2004-04-12 | 株式会社東芝 | 半導体発光素子及び光ファイバ伝送方式 |
DE102017112101A1 (de) * | 2017-06-01 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul |
CN108988122A (zh) * | 2018-09-30 | 2018-12-11 | 无锡源清瑞光激光科技有限公司 | 一种适用于激光点焊的qcw准连续半导体激光控制系统 |
DE102018127977A1 (de) | 2018-11-08 | 2020-05-14 | Osram Opto Semiconductors Gmbh | Diodenlaser und verfahren zum betreiben eines diodenlasers |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2052841A (en) * | 1979-05-08 | 1981-01-28 | Canon Kk | Semiconductor laser device and an image recording apparatuus the same |
GB2054949A (en) * | 1979-07-26 | 1981-02-18 | Standard Telephones Cables Ltd | Cooling arrangement for laser diode |
US4484331A (en) * | 1981-07-20 | 1984-11-20 | Rca Corporation | Regulator for bias current of semiconductor laser diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
-
1985
- 1985-09-28 DE DE19853534744 patent/DE3534744A1/de not_active Withdrawn
-
1986
- 1986-09-15 AU AU62655/86A patent/AU586279B2/en not_active Ceased
- 1986-09-19 GB GB8622658A patent/GB2180985B/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2052841A (en) * | 1979-05-08 | 1981-01-28 | Canon Kk | Semiconductor laser device and an image recording apparatuus the same |
GB2054949A (en) * | 1979-07-26 | 1981-02-18 | Standard Telephones Cables Ltd | Cooling arrangement for laser diode |
US4484331A (en) * | 1981-07-20 | 1984-11-20 | Rca Corporation | Regulator for bias current of semiconductor laser diode |
Also Published As
Publication number | Publication date |
---|---|
GB8622658D0 (en) | 1986-10-22 |
DE3534744A1 (de) | 1987-04-09 |
GB2180985B (en) | 1989-10-25 |
GB2180985A (en) | 1987-04-08 |
AU6265586A (en) | 1987-04-02 |
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