AU6265586A - Laser device - Google Patents

Laser device

Info

Publication number
AU6265586A
AU6265586A AU62655/86A AU6265586A AU6265586A AU 6265586 A AU6265586 A AU 6265586A AU 62655/86 A AU62655/86 A AU 62655/86A AU 6265586 A AU6265586 A AU 6265586A AU 6265586 A AU6265586 A AU 6265586A
Authority
AU
Australia
Prior art keywords
laser device
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU62655/86A
Other versions
AU586279B2 (en
Inventor
Olaf Hildebrand
Gerhard Luz
Albrecht Mozer
Klaus Wunstel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of AU6265586A publication Critical patent/AU6265586A/en
Application granted granted Critical
Publication of AU586279B2 publication Critical patent/AU586279B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AU62655/86A 1985-09-28 1986-09-15 Laser device Ceased AU586279B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19853534744 DE3534744A1 (en) 1985-09-28 1985-09-28 LASER DEVICE WITH STABILIZED OUTPUT
DE3534744 1985-09-28

Publications (2)

Publication Number Publication Date
AU6265586A true AU6265586A (en) 1987-04-02
AU586279B2 AU586279B2 (en) 1989-07-06

Family

ID=6282285

Family Applications (1)

Application Number Title Priority Date Filing Date
AU62655/86A Ceased AU586279B2 (en) 1985-09-28 1986-09-15 Laser device

Country Status (3)

Country Link
AU (1) AU586279B2 (en)
DE (1) DE3534744A1 (en)
GB (1) GB2180985B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890002811B1 (en) * 1986-11-04 1989-07-31 삼성전자 주식회사 Laser diode
DE3907423C2 (en) * 1989-03-08 1993-12-16 Kommunikations Elektronik Circuit arrangement for the transmission of optical signals via optical fibers
DE4026087C2 (en) * 1990-08-17 1996-12-12 Hell Ag Linotype Method and circuit arrangement for controlling a laser diode
US5140605A (en) * 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
JP3518834B2 (en) * 1996-12-14 2004-04-12 株式会社東芝 Semiconductor light emitting device and optical fiber transmission system
DE102017112101A1 (en) * 2017-06-01 2018-12-06 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor module
CN108988122A (en) * 2018-09-30 2018-12-11 无锡源清瑞光激光科技有限公司 A kind of quasi-continuous semiconductor laser control system of QCW suitable for laser spot welding
DE102018127977A1 (en) * 2018-11-08 2020-05-14 Osram Opto Semiconductors Gmbh DIODE LASER AND METHOD FOR OPERATING A DIODE LASER

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2856507A1 (en) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In SEMICONDUCTOR LASER DIODE
US4375067A (en) * 1979-05-08 1983-02-22 Canon Kabushiki Kaisha Semiconductor laser device having a stabilized output beam
GB2054949B (en) * 1979-07-26 1983-04-07 Standard Telephones Cables Ltd Cooling arrangement for laser diode
US4484331A (en) * 1981-07-20 1984-11-20 Rca Corporation Regulator for bias current of semiconductor laser diode

Also Published As

Publication number Publication date
GB2180985B (en) 1989-10-25
GB8622658D0 (en) 1986-10-22
GB2180985A (en) 1987-04-08
DE3534744A1 (en) 1987-04-09
AU586279B2 (en) 1989-07-06

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