AU5757300A - Conductivity reduction method for doped compound semiconductors - Google Patents

Conductivity reduction method for doped compound semiconductors

Info

Publication number
AU5757300A
AU5757300A AU57573/00A AU5757300A AU5757300A AU 5757300 A AU5757300 A AU 5757300A AU 57573/00 A AU57573/00 A AU 57573/00A AU 5757300 A AU5757300 A AU 5757300A AU 5757300 A AU5757300 A AU 5757300A
Authority
AU
Australia
Prior art keywords
reduction method
compound semiconductors
doped compound
conductivity reduction
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU57573/00A
Inventor
Daniel P. Docter
Kursad Kiziloglu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU5757300A publication Critical patent/AU5757300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/25—Chemistry: analytical and immunological testing including sample preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
AU57573/00A 1999-07-15 2000-06-21 Conductivity reduction method for doped compound semiconductors Abandoned AU5757300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/354,248 US6444552B1 (en) 1999-07-15 1999-07-15 Method of reducing the conductivity of a semiconductor and devices made thereby
US09354248 1999-07-15
PCT/US2000/017143 WO2001006552A1 (en) 1999-07-15 2000-06-21 Conductivity reduction method for doped compound semiconductors

Publications (1)

Publication Number Publication Date
AU5757300A true AU5757300A (en) 2001-02-05

Family

ID=23392480

Family Applications (1)

Application Number Title Priority Date Filing Date
AU57573/00A Abandoned AU5757300A (en) 1999-07-15 2000-06-21 Conductivity reduction method for doped compound semiconductors

Country Status (3)

Country Link
US (2) US6444552B1 (en)
AU (1) AU5757300A (en)
WO (1) WO2001006552A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2456662A1 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
NL2010116C2 (en) * 2013-01-11 2014-07-15 Stichting Energie Method of providing a boron doped region in a substrate and a solar cell using such a substrate.

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715418A (en) 1980-07-01 1982-01-26 Fujitsu Ltd Manufacture of semiconductor device
US5536967A (en) * 1980-12-30 1996-07-16 Fujitsu Limited Semiconductor device including Schottky gate of silicide and method for the manufacture of the same
JPS57176772A (en) * 1981-04-23 1982-10-30 Fujitsu Ltd Semiconductor device and manufacture thereof
US4452646A (en) * 1981-09-28 1984-06-05 Mcdonnell Douglas Corporation Method of making planar III-V compound device by ion implantation
JPS5972765A (en) * 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4544799A (en) * 1984-04-30 1985-10-01 University Of Delaware Window structure for passivating solar cells based on gallium arsenide
JPH07120790B2 (en) 1984-06-18 1995-12-20 株式会社日立製作所 Semiconductor device
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
GB8704191D0 (en) 1987-02-24 1987-04-01 Secr Defence Gaasfield effect transistor
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
US5827365A (en) 1991-07-05 1998-10-27 Mitsubishi Kasei Corporation Compound semiconductor and its fabrication
JPH081955B2 (en) * 1991-08-21 1996-01-10 ヒューズ・エアクラフト・カンパニー Method of manufacturing an inverted modulation-doped heterostructure
US5834362A (en) 1994-12-14 1998-11-10 Fujitsu Limited Method of making a device having a heteroepitaxial substrate
US5610086A (en) 1995-06-06 1997-03-11 Hughes Aircraft Company Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
US5548140A (en) 1995-06-06 1996-08-20 Hughes Aircraft Company High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
JP2002502557A (en) * 1998-02-09 2002-01-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method of manufacturing a semiconductor device including a buried channel FET
US6242293B1 (en) * 1998-06-30 2001-06-05 The Whitaker Corporation Process for fabricating double recess pseudomorphic high electron mobility transistor structures

Also Published As

Publication number Publication date
US6897132B2 (en) 2005-05-24
WO2001006552A1 (en) 2001-01-25
US6444552B1 (en) 2002-09-03
US20030040170A1 (en) 2003-02-27

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase