AU461399B2 - Method of obtaining gallium aluminium arsenide foran electroluminescent diode - Google Patents

Method of obtaining gallium aluminium arsenide foran electroluminescent diode

Info

Publication number
AU461399B2
AU461399B2 AU42007/72A AU4200772A AU461399B2 AU 461399 B2 AU461399 B2 AU 461399B2 AU 42007/72 A AU42007/72 A AU 42007/72A AU 4200772 A AU4200772 A AU 4200772A AU 461399 B2 AU461399 B2 AU 461399B2
Authority
AU
Australia
Prior art keywords
foran
electroluminescent diode
gallium aluminium
aluminium arsenide
obtaining gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU42007/72A
Other languages
English (en)
Other versions
AU4200772A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU4200772A publication Critical patent/AU4200772A/en
Application granted granted Critical
Publication of AU461399B2 publication Critical patent/AU461399B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H10P14/263—
    • H10P14/265—
    • H10P14/2911—
    • H10P14/3421—
    • H10P14/3442—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU42007/72A 1971-05-12 1972-05-08 Method of obtaining gallium aluminium arsenide foran electroluminescent diode Expired AU461399B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR717117119A FR2139622B1 (enExample) 1971-05-12 1971-05-12
FRFR7117119 1971-05-12

Publications (2)

Publication Number Publication Date
AU4200772A AU4200772A (en) 1973-11-15
AU461399B2 true AU461399B2 (en) 1975-05-22

Family

ID=9076896

Family Applications (1)

Application Number Title Priority Date Filing Date
AU42007/72A Expired AU461399B2 (en) 1971-05-12 1972-05-08 Method of obtaining gallium aluminium arsenide foran electroluminescent diode

Country Status (8)

Country Link
US (1) US3764408A (enExample)
AU (1) AU461399B2 (enExample)
CA (1) CA964171A (enExample)
DE (1) DE2221547A1 (enExample)
FR (1) FR2139622B1 (enExample)
GB (1) GB1376973A (enExample)
IT (1) IT958828B (enExample)
NL (1) NL7206374A (enExample)

Also Published As

Publication number Publication date
FR2139622B1 (enExample) 1973-05-11
NL7206374A (enExample) 1972-11-14
US3764408A (en) 1973-10-09
DE2221547A1 (de) 1972-11-16
IT958828B (it) 1973-10-30
GB1376973A (en) 1974-12-11
CA964171A (en) 1975-03-11
FR2139622A1 (enExample) 1973-01-12
AU4200772A (en) 1973-11-15

Similar Documents

Publication Publication Date Title
CA969262A (en) Beam-lead electroluminescent diodes and method of manufacture
AU453969B2 (en) Semiconductor diode
CA919309A (en) Semiconductor diodes
CA918303A (en) Method of epitaxially depositing a semiconductor compound
CA984404A (en) Method for the continuous preparation of organic peroxides
CA954016A (en) Production of doped gallium arsenide
AU461399B2 (en) Method of obtaining gallium aluminium arsenide foran electroluminescent diode
CA973977A (en) Schottky barrier diode and method of making the same
CA984945A (en) Electroluminescent semiconductor devices
CA940805A (en) Fabrication of gallium arsenide devices
CA969374A (en) Separation of gallium
CA954426A (en) Chemical growth of insulating layers on gallium arsenide
AU3014971A (en) Organic semiconductor and method of making same
CA974633A (en) Methods of producing gallium phosphide light emitting diodes
CA831694A (en) Method of making gallium arsenide diodes
CA966573A (en) Semiconductor device having an electroluminescent diode
CA982809A (en) Gallium phosphide light emitting semiconductive materials and methods of preparing the same
CA884588A (en) Semiconductor rectifier assembly
CA852176A (en) Method of producing highly pure, especially silicon-free, gallium arsenide
CA854891A (en) Light-emitting diodes and method of making same
CA808347A (en) Method of making electroluminescent gallium phosphide diodes
CA861737A (en) Luminescent diodes
CA1017436A (en) Semiconductor light-emitting diode and method for producing same
CA962559A (en) Manufacture of semi-conductor monocrystals
CA873042A (en) Method of forming shallow junction semiconductor devices