AU3315302A - Point contacts for semiconductors and the production thereof - Google Patents

Point contacts for semiconductors and the production thereof

Info

Publication number
AU3315302A
AU3315302A AU33153/02A AU3315302A AU3315302A AU 3315302 A AU3315302 A AU 3315302A AU 33153/02 A AU33153/02 A AU 33153/02A AU 3315302 A AU3315302 A AU 3315302A AU 3315302 A AU3315302 A AU 3315302A
Authority
AU
Australia
Prior art keywords
semiconductors
production
point contacts
contacts
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU33153/02A
Inventor
Dieter Meissner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU3315302A publication Critical patent/AU3315302A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Powder Metallurgy (AREA)
AU33153/02A 2001-01-13 2002-01-05 Point contacts for semiconductors and the production thereof Abandoned AU3315302A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10101375A DE10101375A1 (en) 2001-01-13 2001-01-13 Point contacts for semiconductors and their manufacture
DE10101375 2001-01-13
PCT/DE2002/000021 WO2002056339A2 (en) 2001-01-13 2002-01-05 Point contacts for semiconductors and the production thereof

Publications (1)

Publication Number Publication Date
AU3315302A true AU3315302A (en) 2002-07-25

Family

ID=7670475

Family Applications (1)

Application Number Title Priority Date Filing Date
AU33153/02A Abandoned AU3315302A (en) 2001-01-13 2002-01-05 Point contacts for semiconductors and the production thereof

Country Status (3)

Country Link
AU (1) AU3315302A (en)
DE (2) DE10101375A1 (en)
WO (2) WO2002056339A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008017312B4 (en) 2008-04-04 2012-11-22 Universität Stuttgart Process for producing a solar cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8302798L (en) * 1982-06-07 1983-12-08 Occidental Chem Co WATER-BATHING BATH FOR STROMLESS DEPOSIT OF GOLD AND PUT ON STROMLOUS PATH TO DEPEND GOLD WITH USE OF THE BATH
US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same
DE19743692A1 (en) * 1997-10-02 1999-04-08 Zae Bayern Thin film silicon solar cell structure incorporates a porous silicon layer
US6140234A (en) * 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal

Also Published As

Publication number Publication date
WO2002056339A2 (en) 2002-07-18
WO2002056346A3 (en) 2002-09-19
DE10101375A1 (en) 2002-07-18
WO2002056346A2 (en) 2002-07-18
DE10290106D2 (en) 2003-12-04

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