AU2387192A - Method for deposition of a metal - Google Patents

Method for deposition of a metal

Info

Publication number
AU2387192A
AU2387192A AU23871/92A AU2387192A AU2387192A AU 2387192 A AU2387192 A AU 2387192A AU 23871/92 A AU23871/92 A AU 23871/92A AU 2387192 A AU2387192 A AU 2387192A AU 2387192 A AU2387192 A AU 2387192A
Authority
AU
Australia
Prior art keywords
deposition
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU23871/92A
Other languages
English (en)
Inventor
Dario Marcello Frigo
Antonius Wilhelmus Gal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Internationale Research Maatschappij BV
Original Assignee
Shell Internationale Research Maatschappij BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shell Internationale Research Maatschappij BV filed Critical Shell Internationale Research Maatschappij BV
Publication of AU2387192A publication Critical patent/AU2387192A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU23871/92A 1991-07-30 1992-07-28 Method for deposition of a metal Abandoned AU2387192A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919116381A GB9116381D0 (en) 1991-07-30 1991-07-30 Method for deposition of a metal
GB9116381 1991-07-30

Publications (1)

Publication Number Publication Date
AU2387192A true AU2387192A (en) 1993-03-02

Family

ID=10699189

Family Applications (1)

Application Number Title Priority Date Filing Date
AU23871/92A Abandoned AU2387192A (en) 1991-07-30 1992-07-28 Method for deposition of a metal

Country Status (6)

Country Link
US (1) US5232869A (enExample)
JP (1) JP3347327B2 (enExample)
AU (1) AU2387192A (enExample)
GB (1) GB9116381D0 (enExample)
TW (1) TW227624B (enExample)
WO (1) WO1993003196A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689619B1 (en) * 1993-03-18 2001-05-30 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a cvd reactor
US5502227A (en) * 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
US5389396A (en) * 1993-08-11 1995-02-14 Northwestern University InGaAsP/GaAs diode laser
US5492724A (en) * 1994-02-22 1996-02-20 Osram Sylvania Inc. Method for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
US6130160A (en) * 1996-10-02 2000-10-10 Micron Technology, Inc. Methods, complexes and system for forming metal-containing films
US6066204A (en) * 1997-01-08 2000-05-23 Bandwidth Semiconductor, Llc High pressure MOCVD reactor system
US6001722A (en) * 1997-06-20 1999-12-14 Motorola, Inc. Selective metallization/deposition for semiconductor devices
DE1001049T1 (de) * 1998-11-13 2000-11-02 Epichem Ltd., Wirral Verfahren zur Reinigung von organometallischen Verbindungen
US6984415B2 (en) * 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
US6998152B2 (en) * 1999-12-20 2006-02-14 Micron Technology, Inc. Chemical vapor deposition methods utilizing ionic liquids
EP1160355B1 (en) * 2000-05-31 2004-10-27 Shipley Company LLC Bubbler
GB0017968D0 (en) * 2000-07-22 2000-09-13 Epichem Ltd An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds
CN1954094A (zh) * 2004-05-20 2007-04-25 阿克佐诺贝尔股份有限公司 用于固体化学制品持续蒸汽发送的起泡器
US20070175392A1 (en) * 2006-01-27 2007-08-02 American Air Liquide, Inc. Multiple precursor dispensing apparatus
US20070194470A1 (en) * 2006-02-17 2007-08-23 Aviza Technology, Inc. Direct liquid injector device
US9109287B2 (en) * 2006-10-19 2015-08-18 Air Products And Chemicals, Inc. Solid source container with inlet plenum
US20190272994A1 (en) * 2009-10-14 2019-09-05 Alta Devices, Inc. High growth rate deposition for group iii/v materials
US11393683B2 (en) * 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4297150A (en) * 1979-07-07 1981-10-27 The British Petroleum Company Limited Protective metal oxide films on metal or alloy substrate surfaces susceptible to coking, corrosion or catalytic activity
US4594173A (en) * 1984-04-19 1986-06-10 Westinghouse Electric Corp. Indium doped gallium arsenide crystals and method of preparation
JPS6311598A (ja) * 1986-07-03 1988-01-19 Toyo Sutoufuaa Chem:Kk 有機金属気相成長用シリンダ−

Also Published As

Publication number Publication date
WO1993003196A1 (en) 1993-02-18
JPH06509389A (ja) 1994-10-20
GB9116381D0 (en) 1991-09-11
US5232869A (en) 1993-08-03
TW227624B (enExample) 1994-08-01
JP3347327B2 (ja) 2002-11-20

Similar Documents

Publication Publication Date Title
AU2387192A (en) Method for deposition of a metal
US5120381B1 (en) Method of forming a protective coating on metallic pipe
AU8076594A (en) Method of treating a metal surface
AU3194993A (en) A method of making a coated abrasive article
HU9302411D0 (en) Method for coating end-substratum
EP0794839A4 (en) METHOD FOR COATING A SURFACE
AU1746392A (en) A method for inhibition of retroviral replication
AU3353784A (en) Method for depositing a metal on a surface
AU4824096A (en) Process for manufacturing a shaped metal can
AU3156293A (en) A process for hydrophilic coating of metal surfaces
AU5242593A (en) Method for forming a vermiculite film
AU2679195A (en) A method of coating
GB9309590D0 (en) Process for depositing metallic intelrlayers
GB9206783D0 (en) Deposition process
AU633773B1 (en) A method of inhibiting sucrase activity
AU680837B2 (en) A method for producing azadirachtin
AU621260B2 (en) Method of forming a metal oxide film
AU2073583A (en) Method for the deposition of a coating
EP0497526A3 (en) Method for making a powder coating
AU6973294A (en) Method for treatment of a piece
AU7037994A (en) A method of galvanising
AU5786396A (en) A method of continuously casting a metal
AU4721893A (en) A method of producing veneer-faced items
AU6794194A (en) A method for the preparation of interferons
AU4412493A (en) Method of manufacturing a watch