AU2020244443B2 - Simulation device for poor contact of internal contact of gas insulated switchgear and calibration method for infrared temperature measurement - Google Patents
Simulation device for poor contact of internal contact of gas insulated switchgear and calibration method for infrared temperature measurement Download PDFInfo
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- AU2020244443B2 AU2020244443B2 AU2020244443A AU2020244443A AU2020244443B2 AU 2020244443 B2 AU2020244443 B2 AU 2020244443B2 AU 2020244443 A AU2020244443 A AU 2020244443A AU 2020244443 A AU2020244443 A AU 2020244443A AU 2020244443 B2 AU2020244443 B2 AU 2020244443B2
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- 238000004088 simulation Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000009529 body temperature measurement Methods 0.000 title claims description 20
- 241000722921 Tulipa gesneriana Species 0.000 claims abstract description 100
- 239000004020 conductor Substances 0.000 claims abstract description 92
- 239000012212 insulator Substances 0.000 claims abstract description 54
- 230000003068 static effect Effects 0.000 claims abstract description 45
- 238000009413 insulation Methods 0.000 claims description 20
- 238000002679 ablation Methods 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
- RYTYSMSQNNBZDP-UHFFFAOYSA-N cobalt copper Chemical compound [Co].[Cu] RYTYSMSQNNBZDP-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000002474 experimental method Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 238000012937 correction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0096—Radiation pyrometry, e.g. infrared or optical thermometry for measuring wires, electrical contacts or electronic systems
Abstract
i N j 9(- WJP? I IN -Ef |EP $ l
(19)
P d PIT, R. ~(10) 0M M :Y
(43) d VTWO 2021/093381 A1
2021 4 5 - 20 (20.05.2021) W IPO T PWC0T
(51) M p $: CO., LTD.) [CN/CN]; +P lidL NI ri X MW
GO1J5/00 (2006.01) GO1R 31/54 (2020.01) M171t, Shanghai 200437 (CN)o
(21) p$ PCT/CN2020/106500 (72) & oA: A(GAO, Kai); +PP T1TJ1I X MW
(22) M pj $ iR H : 2020 4 8 A9 3 H (03.08.2020) §§1710,Shanghai200437 (CN). FMj!t (CHEN,
Honggang); + [A _L * ri 1 F1 Ex ff W 171
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(26) Qlti f: if [Id _L 1I F1 EX M Wl171 ,Shanghai 200437
(30)VrIt.Vf5: (CN)0 yt 1}(LU,Youlong); +PtJd iTJrI2
201911114202.8 2019411] 14 H (14.11.2019) CN ExflY-171-, Shanghai 200437 (CN)o A P
(JIN, Lijun); + L I2* i t rZ X M 171 ,
(71) iMA:IJl- %t17) 'i 1](STATE Shanghai200437 (CN)o tF t h(QIAO,Xinlei);
GRID SHANGHAI MUNICIPAL ELECTRIC POWER FP Pdti II fl M 171, Shanghai 200437
COMPANY) [CN/CN]; + PdLi * fT %f (CN)o 4 l1(MA, Li); +ldL* 12 r XM
X +l(i _L ) N i iil _W Rv ! 0171 , Shanghai 200437 (CN)
S1122 , Shanghai 200122 (CN)o 4,
t- d f R ;fh FR ] (EAST CHINA (SCIHEADIPLAWFIRM); + if I
ELECTRIC POWER TEST RESEARCH INSTITUTE jtI lt 1!4+P 80LA FI L[ [ % 3 1508
Guangdong 510070 (CN)o
(54) Title: SIMULATION DEVICE FOR POOR CONTACT OF GIS INTERNAL CONTACT AND INFRARED CALIBRATION
METHOD
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(57) Abstract: The present invention relates to a simulation device for poor contact of a GIS internal contact and an infrared calibration
method, the simulation device comprising a housing, and a static conductor, a moving conductor, a non-standard tulip contact, insulators
and a contact insulating support which are provided within the housing; one end of the static conductor, the non-standard tulip contact,
and one end of the moving conductor are sequentially connected to form a conductive loop; moreover, the static conductor is fixedly
connected to the non-standard tulip contact, the moving conductor is detachably connected to the non-standard tulip contact, the other
enlend of the static conductor is connected to the housing by means of an insulator, the other end of the moving conductor is connected to
the housing by means of an insulator, the contact insulating support is sleeved on the non-standard tulip contact and is connected to the
housing, and the non-standard tulip contact is a tulip contact having a variable spring pitch diameter. In comparison with the prior art,
the present invention replaces a GIS bus cylinder to carry out fault simulation and testing, and can also carry out an infrared calibration
C experiment, improving the accuracy of infrared detection, and achieving the aim of conveniently detecting a GIS fault.
CA
W O 202 1/09338 1 A1/||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||iD l i
(81) $M2 (>M Ri r H, n- t
M)) : AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG,
BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU,
CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB,
GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, IT,
JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK,
LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX,
MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL,
PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL,
ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US,
UZ, VC, VN, WS, ZA, ZM, ZWc
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CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU,
IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT,
RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI,
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Description
[0001] The present invention belongs to the technical field of thermal fault simulation and detection of Gas Insulated Switchgears (GIS), and in particular relates to a simulation device for poor contact of an internal contact of a GIS and a calibration method for infrared temperature measurement.
[0002] At present, the normal operation of the GIS is related to the safe and stable operation of the power system. As the number and operating life of the GIS are increasing, various defects are gradually increasing. Heat-generating defects are the main defect type of GIS, which are especially common for the contact in the GIS. The GIS mostly bears high voltage and high current, and once a fault occurs, the temperature of the contact will increase rapidly. In recent years, equipment failures caused by heat are not uncommon, which have caused many equipment outages and even explosion accidents. Therefore, it is of great significance to strengthen the detection and analysis of the GIS heat failures, especially its internal contacts.
[0003] At present, the thermal faults of the contact between the internal conductors of the GIS are usually identified by measuring the internal loop resistance of the GIS. However, the measurement of the internal loop resistance requires powering off the GIS. This will cause the part of the power system connected to the GIS to stop operating, thereby reducing the operating efficiency of the power system and affecting the economic operation of the power system. Therefore, it is necessary to develop a fault simulation device to improve the efficiency of GIS maintenance.
[0004] In order to overcome the above defects existing in the prior art, an objective of the present invention is to provide a simulation device for poor contact of an internal contact of a GIS and a calibration method for infrared temperature measurement. The present invention simulates the fault of poor contact in a busbar of the GIS, and uses a thermocouple to accurately measure the temperature of a shell of GIS and calibrate an infrared image thereof.
[0005] The purpose of the present invention is achieved by the following technical solutions.
[0006] A simulation device for poor contact of an internal contact of a GIS includes a shell and a static conductor, a movable conductor, a non-standard tulip contact, a first insulator, a second insulator and a contact insulation support provided inside the shell, where one end of the static conductor, the non-standard tulip contact and one end of the movable conductor are connected in sequence to form a conductive loop; the one end of the static conductor is fixedly connected to the non-standard tulip contact, and the one end of the movable conductor is detachably connected to the non-standard tulip contact;
[0007] the other end of the static conductor is connected to the shell through the first insulator, and the other end of the movable conductor is connected to the shell through the second insulator;
[0008] the contact insulation support is sleeved on the non-standard tulip contact and connected with the shell; the non-standard tulip contact is a customized tulip contact used to simulate a poor contact state between a conductor and a contact; wherein a spring of the non-standard tulip contact has a constant wire diameter, effective number of turns and free length; the non-standard tulip contact is made of beryllium cobalt copper; only the mean diameter of the spring of the non-standard tulip contact is changed; wherein a different mean diameter of the spring leads to a different pressing force of the spring on the non-standard tulip contact, so as to change a contact state between a conductor and the non-standard tulip contact;
[0009] wherein when the simulation device is used to simulate a rough contact surface of a contact after a long time of operation, the mean diameter d2 of the spring on the non-standard tulip contact is obtained by the following formula: d (dd2+ -DO) R,
[0010] d' 0 (d,_i+d 2 - DO) R, dd
[0011] where, d- is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; D0 is a diameter of an axis-closed circle in a free state of the R spring of the non-standard tulip contact; ao is a roughness of the national standard tulip contact; Ra is a roughness of the simulated contact with the rough surface;
[0012] wherein the first insulator and the second insulator are recessed inwardly and clamped on an edge of the shell; the static conductor and the movable conductor respectively pass through centers of the first insulator and the second insulator at both ends of the shell;
[0013] wherein the static conductor is provided with protrusions for fixing the contact insulation support.
[0014] A simulation device for poor contact of an internal contact of a GIS includes a shell and a static conductor, a movable conductor, a non-standard tulip contact, a first insulator, a second insulator and a contact insulation support provided inside the shell, where one end of the static conductor, the non-standard tulip contact and one end of the movable conductor are connected in sequence to form a conductive loop; the one end of the static conductor is fixedly connected to the non-standard tulip contact, and the one end of the movable conductor is detachably connected to the non-standard tulip contact;
[0015] the other end of the static conductor is connected to the shell through the first insulator, and the other end of the movable conductor is connected to the shell through the second insulator;
[0016] the contact insulation support is sleeved on the non-standard tulip contact and connected with the shell; the non-standard tulip contact is a customized tulip contact used to simulate a poor contact state between a conductor and a contact; wherein a spring of the non-standard tulip contact has a constant wire diameter, effective number of turns and free length; the non-standard tulip contact is made of beryllium cobalt copper; only the mean diameter of the spring of the non-standard tulip contact is changed; wherein a different mean diameter of the spring leads to a different pressing force of the spring on the non-standard tulip contact, so as to change a contact state between a conductor and the non-standard tulip contact;
[0017] wherein when the simulation device is used to simulate a state in which an arc contact length of an arc contact is reduced due to ablation after a long time of operation, the mean diameter d2 of the spring on the non-standard tulip contact is obtained by the following formula:
d(d +d20 -DO) SO
[00181 d20(d,+d 2 -DO) s+ d d
[0019] where, a- is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; DO is a diameter of an axis-closed circle in a free state of the spring of the non-standard tulip contact; S 0 is an arc contact stroke length of the national standard tulip contact; S+ is a stroke length of the simulated arc contact.
[0020] wherein the first insulator and the second insulator are recessed inwardly and clamped on an edge of the shell; the static conductor and the movable conductor respectively pass through centers of the first insulator and the second insulator at both ends of the shell.
[0021] wherein the static conductor is provided with protrusions for fixing the contact insulation support.
[0022] Further, the first insulator and the second insulator are glass basin insulators.
[0023] Further, the static conductor and the movable conductor are hollow copper rods.
[0024] Further, the contact insulation support is made of high-temperature vulcanized silicon rubber.
[0025] A calibration method for infrared temperature measurement by using the above simulation device for poor contact of an internal contact of a GIS includes the following steps:
[0026] 1) pasting a plurality of thermocouples on the simulation device;
[0027] 2) energizing the simulation device; based on shell temperatures measured by different thermocouples, obtaining a relationship of measured temperature by an infrared thermal imager and measuring distance of the infrared thermal imager at an observation angle of 0, to obtain a temperature-distance fitting equation and an optimal distance for infrared temperature measurement;
[0028] 3) obtaining a temperature-observation angle relationship of the infrared thermal imager on an arc of the optimal distance, to obtain a temperature-angle fitting equation;
[0029] 4) fixing the infrared thermal imager at a position of the optimal distance and 0° observation angle, recording temperature data measured by the infrared thermal imager and the thermocouples at a same position of the shell during the whole energizing process of the simulation device, and obtaining a corresponding fitting equation of the temperature data measured by the infrared thermal imager and the thermocouples; and
[0030] 5) reading the measured temperature data from an infrared image taken by the infrared thermal imager; and correcting the temperature data according to a spatial geometric relationship and the fitting equations in steps 2) to 4).
[0031] Compared with the prior art, the present invention has the following beneficial effects:
[0032] 1. The simulation device of the present invention can accurately simulate poor contact of contacts in the GIS and effectively improve the experimental efficiency, which has important theoretical and practical significance for inferring internal faults.
[0033] 2. The simulation device of the present invention can replace the busbar of the GIS to perform fault simulation and testing, so as to understand the status of the GIS in time and improve the safety of the GIS in use.
[0034] 3. The simulation device of the present invention can perform infrared calibration experiments, so as to improve the accuracy of infrared detection, achieve the purpose of conveniently detecting GIS faults, and provide assistance for power maintenance personnel.
[0035] FIG. 1 is a schematic diagram of an overall appearance of a simulation device according to the present invention.
[0036] FIG. 2 is a structural diagram of a shell of the simulation device according to the present invention.
[0037] FIG. 3 is a structural diagram of the simulation device according to the present invention, where part of the shell is removed to show an internal structure of the shell.
[0038] FIG. 4 is a structural diagram of a non-standard tulip contact according to the present invention.
[0039] FIG. 5 is a structural diagram of a spring of the non-standard tulip contact shown in FIG. 4 according to the present invention.
[0040] FIG. 6 is a structural diagram of part of the spring of the non-standard tulip contact shown in FIG. 4 according to the present invention.
[0041] FIG. 7 is a structural diagram of a contact insulation support according to the present invention.
[0042] FIG. 8 is a structural diagram of a static conductor according to the present invention.
[0043] FIG. 9 is a structural diagram of a first or second insulator according to the present invention.
[0044] FIG. 10 is a structural diagram of a movable conductor according to the present invention.
[0045] FIG. 11 shows an initial dynamic resistance / stroke curve according to the present invention.
[0046] FIG. 12 shows an equivalent model of a rough contact surface according to the present invention.
[0047] FIG. 13 shows the positions of temperature measurement labels.
[0048] FIG. 14 is a schematic diagram of a calibration method for infrared temperature measurement by using the simulation device.
[0049] Reference Numerals: 1. static conductor; 2. shell; 3. first insulator; 4. non-standard tulip contact; 5. contact insulation support; 6. movable conductor; 7. second insulator; 8. spring; 9. axis-closed circle; 10. outer diameter; 11. mean diameter; 12. inner diameter; 13. wire diameter; 14. contact arm diameter; 15. temperature measurement label; 16. infrared thermal imager; 17. protrusion; and 20. simulation device.
[0050] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. The embodiments are implemented based on the technical solution of the present invention. Although the detailed implementations and specific operation processes are described, the protection scope of the present invention is not limited to the embodiments.
[0051] Embodiment 1
[0052] This embodiment provides a simulation device 20 for poor contact of an internal contact of a gas insulated switchgear (GIS). As shown in FIGS. 1 to 10, the simulation device includes a shell 2 and a static conductor 1, a movable conductor 6, a non-standard tulip contact 4, a first insulator 3, a second insulator 7 and a contact insulation support 5 provided inside the shell 2. One end of the static conductor 1, the non-standard tulip contact 4 and one end of the movable conductor 6 are connected in sequence to form a conductive loop. The one end of the static conductor 1 is fixedly connected to the non-standard tulip contact 4, and the one end of the movable conductor 6 is detachably connected to the non-standard tulip contact 4. The other end of the static conductor 1 is connected to the shell 2 through the first insulator 3, and the other end of the movable conductor 6 is connected to the shell 2 through the second insulator 7. The contact insulation support 5 is sleeved on the non-standard tulip contact 4 and connected with the shell 2. The first insulator 3 and the second insulator 7 are recessed inwardly and clamped on an edge of the shell 2. The static conductor 1 and the movable conductor 6 respectively pass through centers of the first insulator 3 and the second insulator 7 at both ends of the shell. The static conductor 1 is provided with protrusions 17 for fixing the contact insulation support 5.
[0053] The non-standard tulip contact 4 is provided with a spring having a variable mean diameter. The mean diameter of the spring of the non-standard tulip contact 4 is designed to change a contact resistance between the movable conductor and the static conductor to simulate internal contact failures of the GIS, including roughness caused by mechanical wear or electrical contact of the contact after ablation by a high current. An initial dynamic resistance / stroke curve is shown in FIG. 11.
[0054] As shown in FIGS. 4 to 6, the spring of the non-standard tulip contact has a constant wire diameter, effective number of turns and free length. The non-standard tulip contact is made of beryllium cobalt copper, and only the mean diameter of the spring is changed to realize the change of performance. The effective number of turns refers to the number of turns of a metal wire of the spring, and the wire diameter refers to the diameter of the metal wire of the spring. An outer diameter 10, a mean diameter 11, an inner diameter 12 and a wire diameter 13 of the spring are shown in FIG. 6.
[0055] FIG. 8 is a structural view of the static conductor, and FIG. 10 is a structural view of the movable conductor. A short section at a front end of the static conductor is a static contact arm, and a short section at a front end of the movable conductor is a movable contact arm. The static contact arm and the movable contact arm are inserted into the non-standard tulip contact to make the static conductor, the non-standard tulip contact and the movable conductor form a current path.
[0056] A different mean diameter of the spring leads to a different pressing force of the spring on the non-standard tulip contact, thereby changing the contact status between the non-standard tulip contact and the contact arm.
[0057] When the simulation device is used to simulate a rough contact surface of a contact after a long time of operation, the mean diameter d of the spring on the non-standard tulip contact 4 is obtained by the following formula: d (d d2 + -DO) _)R
[00581 d' 0 (d +d - DO) R,
[0059] In the formula, d is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; DO is a diameter of an axis-closed circle in a free state of the spring of the non-standard tulip contact; Rao is a roughness of the national standard tulip contact; Ra+ is a roughness of the simulated contact with the rough surface. FIG. 5 shows the spring 8 of the non-standard tulip contact 4 and the diameter Do of the axis-closed circle 9 in a free state of the contact spring. The movable conductor is detachably connected to the non-standard tulip contact, the diameter of the contact arm is the diameter of the movable contact arm, and the diameter darm 14 of the contact arm is shown in FIG. 10.
[0060] An equivalent model of the rough contact surface is shown in FIG. 12.
[0061] When the simulation device is used to simulate a state in which an arc contact length of an arc contact is reduced due to ablation after a long time of operation, the mean diameter d2 of the spring on the non-standard tulip contact 4 is obtained by the following formula:
d'(dr_ + d 20 -DO) sO
[0062] d' (d +d 2 -DO) s+
[0063] In the formula, d is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; DO is a diameter of an axis-closed circle in a free state of the spring of the non-standard tulip contact; S0 is an arc contact stroke length of the national standard tulip contact; s+ is a stroke length of the simulated arc contact. FIG. 5 shows the spring 8 of the non-standard tulip contact 4 and the diameter D0 of the axis-closed circle 9 in a free state of the contact spring. The movable conductor is detachably connected to the non-standard tulip contact, the diameter of the contact arm is the diameter of the movable contact arm, and the diameter darm 14 of the contact arm is shown in FIG. 10.
[0064] In this embodiment, the simulation of high-current ablation can be realized by adjusting the mean diameter of the spring accordingly.
[0065] In this embodiment, the insulators 3 and 7 are glass basin insulators, the static conductor 1 and the movable conductor 6 are hollow copper rods, and the contact insulation support 5 is made of high-temperature vulcanized silicon rubber.
[0066] Embodiment 2
[0067] This embodiment provides a calibration method for infrared temperature measurement by using the simulation device for poor contact of an internal contact of a GIS as described in Embodiment 1. The method includes the following steps:
[0068] 1) Paste a plurality of thermocouples on the simulation device.
[0069] A heat-resistant insulating tape is cut into pieces of 1 cm * 1 cm to evenly adhere ends of the thermocouples on a surface of the shell of the simulation device.
[0070] 2) Energize the simulation device; based on shell temperatures measured by different thermocouples, obtain a relationship of measured temperature by an infrared thermal imager 16 and measuring distance of the infrared thermal imager 16 at an observation angle of 00, to obtain a temperature-distance fitting equation and an optimal distance for infrared temperature measurement.
[0071] When the simulation device is energized, the thermocouple thermometers are used to measure the stable temperature rise of the shell.
[0072] 3) Obtain a temperature-observation angle relationship of the infrared thermal imager on an arc of the optimal distance, to obtain a temperature-angle fitting equation.
[0073] 4) Deenergize and cool the device; fix the infrared thermal imager at positions of the optimal distance and 0° observation angle, re-energize the device, record temperature data of the infrared thermal imager and the thermocouples at corresponding points during the whole energizing process of the simulation device, and obtain a corresponding fitting equation.
[0074] 5) Read the temperature data of the infrared thermal imager from an infrared image taken by the infrared thermal imager; and correct the read temperature data according to a spatial geometric relationship and the fitting equations in steps 2) to 4).
[0075] As shown in FIG. 14, a center circle indicates a cross section of the simulation device 20. Squares on the center circle represent temperature measurement labels 15. The optimal distance is R, which corresponds to an arc. The infrared thermal imager 16 is placed on the arc with different observation angles. The temperature measurement labels 15 in FIGS. 13 and 14 are heat-resistant insulating tapes with a thermocouple attached. In the method, the optimal distance refers to a distance at which a difference between the temperature measured by the thermocouple and the temperature measured by the infrared thermal imager is the smallest.
[0076] The temperature measured by the thermocouple is the real temperature of the shell, and the temperature measured by the infrared thermal imager needs to be corrected to obtain the real temperature. The influencing factors of the correction include distance and observation angle, etc. Specifically, the temperature measured by the infrared thermal imager is substituted into the fitting equation to obtain the real temperature measured by the thermocouples. This process is called correction. It is generally believed that thermocouple temperature measurement is accurate, and the correction of infrared temperature measurement ensures accurate temperature. Infrared temperature measurement obtains the temperature of different points on an area, while the thermocouple only measures the temperature of a point. Compared with thermocouple temperature measurement, infrared temperature measurement has the advantage of non-contact, which can easily find and visually display the hot spot of the shell. The accurate temperature of the hot spot of the shell is obtained by correction.
[0077] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person of ordinary skill in the art can make various modifications and variations according to the concept of the present invention without creative efforts. Therefore, all technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention should fall within the protection scope of the present invention.
[0078] The reference to any prior art in this specification is not, and should not be taken as, an acknowledgement or any form of suggestion that such prior art forms part of the common general knowledge.
[0079] It will be understood that the terms "comprise" and "include" and any of their derivatives (e.g. comprises, comprising, includes, including) as used in this specification, and the claims that follow, is to be taken to be inclusive of features to which the term refers, and is not meant to exclude the presence of any additional features unless otherwise stated or implied.
Claims (6)
- CLAIMS: 1. A simulation device for poor contact of an internal contact of a gas insulated switchgear (GIS), comprising a shell (2) and a static conductor (1), a movable conductor (6), a non-standard tulip contact (4), a first insulator (3), a second insulator (7) and a contact insulation support (5) provided inside the shell (2), wherein one end of the static conductor (1), the non-standard tulip contact (4) and one end of the movable conductor (6) are connected in sequence to form a conductive loop; the one end of the static conductor (1) is fixedly connected to the non-standard tulip contact (4), and the one end of the movable conductor (6) is detachably connected to the non-standard tulip contact (4); the other end of the static conductor (1) is connected to the shell (2) through the first insulator (3), and the other end of the movable conductor (6) is connected to the shell (2) through the second insulator (7); the contact insulation support (5) is sleeved on the non-standard tulip contact (4) and connected with the shell (2); the non-standard tulip contact (4) is a customized tulip contact used to simulate a poor contact state between a conductor and a contact; wherein a spring of the non-standard tulip contact (4) has a constant wire diameter, effective number of turns and free length; the non-standard tulip contact (4) is made of beryllium cobalt copper; only the mean diameter of the spring of the non-standard tulip contact (4) is changed; wherein a different mean diameter of the spring leads to a different pressing force of the spring on the non-standard tulip contact (4), so as to change a contact state between a conductor and the non-standard tulip contact (4); wherein when the simulation device is used to simulate a rough contact surface of a contact after a long time of operation, the mean diameter d2 of the spring on the non-standard tulip contact (4) is obtained by the following formula:d'(d. +d2 -DO) - R d20 (d,+d2- DO) R,+ d d wherein, dar is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; D0 is a diameter of an axis-closed circle in a free state of the R spring of the non-standard tulip contact; ao is aroughness of the national standard tulip contact; is a roughness of the simulated contact with the rough surface; wherein the first insulator (3) and the second insulator (7) are recessed inwardly and clamped on an edge of the shell (2); the static conductor (1) and the movable conductor (6) respectively pass through centers of the first insulator (3) and the second insulator (7) at both ends of the shell; wherein the static conductor (1) is provided with protrusions for fixing the contact insulation support (5).
- 2. A simulation device for poor contact of an internal contact of a gas insulated switchgear (GIS), comprising a shell (2) and a static conductor (1), a movable conductor (6), a non-standard tulip contact (4), a first insulator (3), a second insulator (7) and a contact insulation support (5) provided inside the shell (2), wherein one end of the static conductor (1), the non-standard tulip contact (4) and one end of the movable conductor (6) are connected in sequence to form a conductive loop; the one end of the static conductor (1) is fixedly connected to the non-standard tulip contact (4), and the one end of the movable conductor (6) is detachably connected to the non-standard tulip contact (4); the other end of the static conductor (1) is connected to the shell (2) through the first insulator (3), and the other end of the movable conductor (6) is connected to the shell (2) through the second insulator (7); the contact insulation support (5) is sleeved on the non-standard tulip contact (4) and connected with the shell (2); the non-standard tulip contact (4) is a customized tulip contact used to simulate a poor contact state between a conductor and a contact; wherein a spring of the non-standard tulip contact (4) has a constant wire diameter, effective number of turns and free length; the non-standard tulip contact (4) is made of beryllium cobalt copper; only the mean diameter of the spring of the non-standard tulip contact (4) is changed; wherein a different mean diameter of the spring leads to a different pressing force of the spring on the non-standard tulip contact (4), so as to change a contact state between a conductor and the non-standard tulip contact (4); wherein when the simulation device is used to simulate a state in which an arc contact length of an arc contact is reduced due to ablation after a long time of operation, the mean diameter d2 of the spring on the non-standard tulip contact (4) is obtained by the following formula:d'(d +d20 -DO) _SOd' 0 (drn +2 - DO) s dd wherein, a- is a diameter of a contact arm; 20 is a mean diameter of a spring on a national standard tulip contact; D0 is a diameter of an axis-closed circle in a free state of the spring of the non-standard tulip contact; SI is an arc contact stroke length of the national standard tulip contact; s+ is a stroke length of the simulated arc contact; wherein the first insulator (3) and the second insulator (7) are recessed inwardly and clamped on an edge of the shell (2); the static conductor (1) and the movable conductor (6) respectively pass through centers of the first insulator (3) and the second insulator (7) at both ends of the shell; wherein the static conductor (1) is provided with protrusions for fixing the contact insulation support (5).
- 3. The simulation device for poor contact of an internal contact of a GIS according to claim 1, wherein the first insulator (3) and the second insulator (7) are glass basin insulators.
- 4. The simulation device for poor contact of an internal contact of a GIS according to claim 1, wherein the static conductor (1) and the movable conductor (6) are hollow copper rods.
- 5. The simulation device for poor contact of an internal contact of a GIS according to claim 1, wherein the contact insulation support (5) is made of high-temperature vulcanized silicon rubber.
- 6. A calibration method for infrared temperature measurement by using the simulation device for poor contact of an internal contact of a GIS according to claim 1, comprising the following steps: 1) pasting a plurality of thermocouples on the simulation device; 2) energizing the simulation device; based on shell temperatures measured by different thermocouples, obtaining a relationship of measured temperature by an infrared thermal imager and measuring distance of the infrared thermal imager at an observation angle of 0, to obtain a temperature-distance fitting equation and an optimal distance for infrared temperaturemeasurement; 3) obtaining a temperature-observation angle relationship of the infrared thermal imager on an arc of the optimal distance, to obtain a temperature-angle fitting equation; 4) fixing the infrared thermal imager at a position of the optimal distance and 0 observation angle, recording temperature data measured by the infrared thermal imager and the thermocouples at a same position of the shell during the whole energizing process of the simulation device, and obtaining a corresponding fitting equation of the temperature data measured by the infrared thermal imager and the thermocouples; and 5) reading the measured temperature data from an infrared image taken by the infraredthermal imager; and correcting the temperature data according to a spatial geometric relationship and the fitting equations in steps 2) to 4).
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| CN201911114202.8 | 2019-11-14 | ||
| CN201911114202.8A CN111024233B (en) | 2019-11-14 | 2019-11-14 | Simulation device for poor contact of GIS internal contact and infrared calibration method |
| PCT/CN2020/106500 WO2021093381A1 (en) | 2019-11-14 | 2020-08-03 | Simulation device for poor contact of gis internal contact and infrared calibration method |
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| AU2020244443A1 AU2020244443A1 (en) | 2021-06-03 |
| AU2020244443B2 true AU2020244443B2 (en) | 2022-02-17 |
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| CN (1) | CN111024233B (en) |
| AU (1) | AU2020244443B2 (en) |
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| CN111024233B (en) * | 2019-11-14 | 2021-10-08 | 国网上海市电力公司 | Simulation device for poor contact of GIS internal contact and infrared calibration method |
| CN113465804B (en) * | 2021-06-24 | 2023-09-12 | 珠海市集森电器有限公司 | Quincuncial contact finger clamping force detection method and device |
| CN113985228B (en) * | 2021-10-28 | 2023-07-04 | 西安交通大学 | Ultra/extra-high voltage GIS/GIL insulator current-carrying characteristic test device and method |
| CN114047414B (en) * | 2021-11-11 | 2024-04-02 | 国网上海市电力公司 | Be used for defect test simulation in GIS air chamber to use convenient change structure |
| CN116184141B (en) * | 2023-04-25 | 2023-08-29 | 南昌工程学院 | Gas insulation equipment fault diagnosis method and system |
| CN116632703B (en) * | 2023-06-06 | 2024-03-29 | 国网山东省电力公司临清市供电公司 | Handcart-type switch contact replacement tool |
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| AU2020244443A1 (en) | 2021-06-03 |
| CN111024233B (en) | 2021-10-08 |
| CN111024233A (en) | 2020-04-17 |
| WO2021093381A1 (en) | 2021-05-20 |
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