AU2009903369A0 - Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials - Google Patents

Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials

Info

Publication number
AU2009903369A0
AU2009903369A0 AU2009903369A AU2009903369A AU2009903369A0 AU 2009903369 A0 AU2009903369 A0 AU 2009903369A0 AU 2009903369 A AU2009903369 A AU 2009903369A AU 2009903369 A AU2009903369 A AU 2009903369A AU 2009903369 A0 AU2009903369 A0 AU 2009903369A0
Authority
AU
Australia
Prior art keywords
separation
semiconductor materials
minority carrier
carrier lifetime
doping density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2009903369A
Inventor
Thorsten Trupke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BT Imaging Pty Ltd
Original Assignee
BT Imaging Pty Ltd
Filing date
Publication date
Application filed by BT Imaging Pty Ltd filed Critical BT Imaging Pty Ltd
Publication of AU2009903369A0 publication Critical patent/AU2009903369A0/en
Priority to PCT/AU2010/000908 priority Critical patent/WO2011009159A1/en
Priority to SG2011095684A priority patent/SG177341A1/en
Priority to CN201410281804.3A priority patent/CN104020148B/en
Priority to CN201710117459.3A priority patent/CN106932369A/en
Priority to CN201080033122.0A priority patent/CN102483378B/en
Priority to US13/384,970 priority patent/US8742372B2/en
Priority to TW099123819A priority patent/TWI477762B/en
Priority to US14/256,480 priority patent/US9157863B2/en
Priority to US14/869,469 priority patent/US20160084764A1/en
Abandoned legal-status Critical Current

Links

AU2009903369A 2009-07-20 2009-07-20 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials Abandoned AU2009903369A0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
PCT/AU2010/000908 WO2011009159A1 (en) 2009-07-20 2010-07-19 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
SG2011095684A SG177341A1 (en) 2009-07-20 2010-07-19 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
CN201410281804.3A CN104020148B (en) 2009-07-20 2010-07-19 Separation of doping density and minority carrier lifetime in photoluminescence measurement
CN201710117459.3A CN106932369A (en) 2009-07-20 2010-07-19 Doping concentration and minority carrier lifetime are separated in photoluminescence measurement
CN201080033122.0A CN102483378B (en) 2009-07-20 2010-07-19 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
US13/384,970 US8742372B2 (en) 2009-07-20 2010-07-19 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
TW099123819A TWI477762B (en) 2009-07-20 2010-07-20 Method and system for conducting analysis of semiconductor material
US14/256,480 US9157863B2 (en) 2009-07-20 2014-04-18 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
US14/869,469 US20160084764A1 (en) 2009-07-20 2015-09-29 Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials

Publications (1)

Publication Number Publication Date
AU2009903369A0 true AU2009903369A0 (en) 2009-07-30

Family

ID=

Similar Documents

Publication Publication Date Title
GB2486352B (en) Method of forming semiconductor film and photovoltaic device including the film
HK1179048A1 (en) Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate
EP2441094A4 (en) Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
EP2513950A4 (en) Semiconductor device structures with modulated doping and related methods
EP2496038A4 (en) Component carrier configuration method in carrier aggregation and device thereof
GB2484605B (en) Silicon wafer based structure for heterostructure solar cells
EP2507820A4 (en) Semiconductor material doping
EP2801107A4 (en) Wafer grading and sorting for photovoltaic cell manufacture
EP2550680A4 (en) Integrated photovoltaic cell and radio-frequency antenna
EP2586062A4 (en) Substrate with buffer layer for oriented nanowire growth
GB2486973B (en) High density polycrystalline superhard material
EP2534700A4 (en) Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
EP2413650A4 (en) Method and base station for implementing carrier aggregation
EP2631362A4 (en) Method for manufacturing geological base course with disaster-preventive and ecological base course
EP2544225A4 (en) Semiconductor device and bonding material for semiconductor device
EP2648234A4 (en) Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element and the semiconductor epitaxial wafer, and detecting apparatus
EP2304804A4 (en) Germanium-enriched silicon material for making solar cells
EP2126963A4 (en) Semiconductor heterostructures and manufacturing thereof
GB2498669B (en) Transitioned film growth for conductive semiconductor materials
EP2592650A4 (en) Silicon carbide substrate, semiconductor device, and soi wafer
SG10201403709UA (en) Method for recharging raw material polycrystalline silicon
EP2700900A4 (en) Dynamic quantity measuring device, semiconductor device, detachment detection device, and module
EP3311421A4 (en) Solar cell emitter characterization using non-contact dopant concentration and minority carrier lifetime measurement
EP2562792A4 (en) COMPOSITION THAT FORMS n-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT
EP2590958A4 (en) In situ chemiluminescent substrates and assays