AU2005285192A1 - Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods - Google Patents

Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods Download PDF

Info

Publication number
AU2005285192A1
AU2005285192A1 AU2005285192A AU2005285192A AU2005285192A1 AU 2005285192 A1 AU2005285192 A1 AU 2005285192A1 AU 2005285192 A AU2005285192 A AU 2005285192A AU 2005285192 A AU2005285192 A AU 2005285192A AU 2005285192 A1 AU2005285192 A1 AU 2005285192A1
Authority
AU
Australia
Prior art keywords
superlattice
integrated circuit
optical
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2005285192A
Other languages
English (en)
Inventor
Robert J. Mears
Robert John Stephenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atomera Inc
Original Assignee
Mears Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/936,903 external-priority patent/US7432524B2/en
Application filed by Mears Technologies Inc filed Critical Mears Technologies Inc
Publication of AU2005285192A1 publication Critical patent/AU2005285192A1/en
Assigned to MEARS TECHNOLOGIES, INC. reassignment MEARS TECHNOLOGIES, INC. Request for Assignment Assignors: RJ MEARS, LLC
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
AU2005285192A 2004-09-09 2005-09-08 Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods Abandoned AU2005285192A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/936,933 2004-09-09
US10/936,903 US7432524B2 (en) 2003-06-26 2004-09-09 Integrated circuit comprising an active optical device having an energy band engineered superlattice
US10/936,903 2004-09-09
US10/936,933 US20050032247A1 (en) 2003-06-26 2004-09-09 Method for making an integrated circuit comprising an active optical device having an energy band engineered superlattice
PCT/US2005/032029 WO2006031601A1 (en) 2004-09-09 2005-09-08 Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods

Publications (1)

Publication Number Publication Date
AU2005285192A1 true AU2005285192A1 (en) 2006-03-23

Family

ID=35414689

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2005285192A Abandoned AU2005285192A1 (en) 2004-09-09 2005-09-08 Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods

Country Status (6)

Country Link
EP (1) EP1794805A1 (de)
JP (1) JP2008512873A (de)
AU (1) AU2005285192A1 (de)
CA (1) CA2579846A1 (de)
TW (1) TWI282172B (de)
WO (1) WO2006031601A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007130973A1 (en) * 2006-05-01 2007-11-15 Mears Technologies, Inc. Semiconductor device including a dopant blocking superlattice and associated methods
US9423560B2 (en) * 2011-12-15 2016-08-23 Alcatel Lucent Electronic/photonic integrated circuit architecture and method of manufacture thereof
EP3776073A1 (de) 2018-04-12 2021-02-17 Atomera Incorporated Halbleiterbauelement und verfahren mit vertikal integrierten optischen und elektronischen vorrichtungen und mit einem übergitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216262A (en) * 1992-03-02 1993-06-01 Raphael Tsu Quantum well structures useful for semiconductor devices
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
JPH08107253A (ja) * 1994-08-12 1996-04-23 Mitsubishi Electric Corp 光導波路，半導体レーザ・導波路集積装置，半導体レーザ・導波路・フォトダイオード集積装置，半導体レーザ・導波路・モード整合集積装置，モード整合素子，及びその製造方法
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide

Also Published As

Publication number Publication date
TW200614501A (en) 2006-05-01
WO2006031601A9 (en) 2006-08-03
JP2008512873A (ja) 2008-04-24
TWI282172B (en) 2007-06-01
WO2006031601A1 (en) 2006-03-23
EP1794805A1 (de) 2007-06-13
CA2579846A1 (en) 2006-03-23

Similar Documents

Publication Publication Date Title
US7279699B2 (en) Integrated circuit comprising a waveguide having an energy band engineered superlattice
CN107112354B (zh) 包括超晶格和替换金属栅极结构的半导体装置和相关方法
US7227174B2 (en) Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
US7229902B2 (en) Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
US8389974B2 (en) Multiple-wavelength opto-electronic device including a superlattice
US7045813B2 (en) Semiconductor device including a superlattice with regions defining a semiconductor junction
US7700447B2 (en) Method for making a semiconductor device comprising a lattice matching layer
US20050170591A1 (en) Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
US20080197341A1 (en) Method for making a multiple-wavelength opto-electronic device including a superlattice
AU2006294552A1 (en) Semiconductor device including a front side strained superlattice layer and a back side stress layer and associated methods
AU2005285192A1 (en) Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated fabrication methods
CA2612243A1 (en) Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods

Legal Events

Date Code Title Description
TC Change of applicant's name (sec. 104)

Owner name: MEARS TECHNOLOGIES, INC.

Free format text: FORMER NAME: RJ MEARS, LLC

MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted