AU2003289141A1 - Process for producing compound semiconductor, apparatus therefor, infrared emitting element and infrared receiving element - Google Patents

Process for producing compound semiconductor, apparatus therefor, infrared emitting element and infrared receiving element

Info

Publication number
AU2003289141A1
AU2003289141A1 AU2003289141A AU2003289141A AU2003289141A1 AU 2003289141 A1 AU2003289141 A1 AU 2003289141A1 AU 2003289141 A AU2003289141 A AU 2003289141A AU 2003289141 A AU2003289141 A AU 2003289141A AU 2003289141 A1 AU2003289141 A1 AU 2003289141A1
Authority
AU
Australia
Prior art keywords
infrared
compound semiconductor
apparatus therefor
producing compound
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003289141A
Other languages
English (en)
Inventor
Akinori Koukitu
Yoshinao Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo University of Agriculture and Technology NUC
Original Assignee
Tokyo University of Agriculture and Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo University of Agriculture and Technology NUC filed Critical Tokyo University of Agriculture and Technology NUC
Publication of AU2003289141A1 publication Critical patent/AU2003289141A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
AU2003289141A 2002-12-19 2003-12-03 Process for producing compound semiconductor, apparatus therefor, infrared emitting element and infrared receiving element Abandoned AU2003289141A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002368333A JP4331936B2 (ja) 2002-12-19 2002-12-19 化合物半導体の製造方法及び化合物半導体の製造装置
JP2002-368333 2002-12-19
PCT/JP2003/015479 WO2004057655A1 (ja) 2002-12-19 2003-12-03 化合物半導体の製造方法及び化合物半導体の製造装置並びに赤外線発光素子及び赤外線受光素子

Publications (1)

Publication Number Publication Date
AU2003289141A1 true AU2003289141A1 (en) 2004-07-14

Family

ID=32677114

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003289141A Abandoned AU2003289141A1 (en) 2002-12-19 2003-12-03 Process for producing compound semiconductor, apparatus therefor, infrared emitting element and infrared receiving element

Country Status (3)

Country Link
JP (1) JP4331936B2 (ja)
AU (1) AU2003289141A1 (ja)
WO (1) WO2004057655A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560736B2 (en) * 2005-08-15 2009-07-14 General Electric Company Mid-infrared resonant cavity light emitting diodes
JP4961820B2 (ja) * 2006-04-26 2012-06-27 住友電気工業株式会社 化合物半導体の製造方法
JP2012080010A (ja) * 2010-10-05 2012-04-19 Sumitomo Electric Ind Ltd エピタキシャルウエハ、半導体素子、およびこれらの製造方法
JP6132746B2 (ja) * 2013-11-05 2017-05-24 浜松ホトニクス株式会社 赤外線検出素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024965B2 (ja) * 1999-07-22 2007-12-19 三菱化学株式会社 エピタキシャルウエハおよび発光ダイオード

Also Published As

Publication number Publication date
JP2004200480A (ja) 2004-07-15
JP4331936B2 (ja) 2009-09-16
WO2004057655A1 (ja) 2004-07-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase