AU2003279058A1 - Method and system for analyzing data from a plasma process - Google Patents

Method and system for analyzing data from a plasma process

Info

Publication number
AU2003279058A1
AU2003279058A1 AU2003279058A AU2003279058A AU2003279058A1 AU 2003279058 A1 AU2003279058 A1 AU 2003279058A1 AU 2003279058 A AU2003279058 A AU 2003279058A AU 2003279058 A AU2003279058 A AU 2003279058A AU 2003279058 A1 AU2003279058 A1 AU 2003279058A1
Authority
AU
Australia
Prior art keywords
plasma process
analyzing data
analyzing
data
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003279058A
Other versions
AU2003279058A8 (en
Inventor
Lee Chen
Deana Delp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003279058A1 publication Critical patent/AU2003279058A1/en
Publication of AU2003279058A8 publication Critical patent/AU2003279058A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
AU2003279058A 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process Abandoned AU2003279058A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41465602P 2002-10-01 2002-10-01
US60/414,656 2002-10-01
PCT/US2003/030741 WO2004032194A2 (en) 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process

Publications (2)

Publication Number Publication Date
AU2003279058A1 true AU2003279058A1 (en) 2004-04-23
AU2003279058A8 AU2003279058A8 (en) 2004-04-23

Family

ID=32069752

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003279058A Abandoned AU2003279058A1 (en) 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process

Country Status (7)

Country Link
US (1) US20050199341A1 (en)
JP (1) JP2006501684A (en)
KR (1) KR101027183B1 (en)
CN (1) CN100353485C (en)
AU (1) AU2003279058A1 (en)
TW (1) TWI264043B (en)
WO (1) WO2004032194A2 (en)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323417B2 (en) * 2004-09-21 2008-01-29 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US20050115924A1 (en) * 2003-12-01 2005-06-02 Justin Sato Integration function of RF signal to analyze steady state and non-steady state ( initializaion) of plasmas
US8027813B2 (en) * 2004-02-20 2011-09-27 Nikon Precision, Inc. Method and system for reconstructing aberrated image profiles through simulation
US20070077763A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8157951B2 (en) 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8221580B2 (en) 2005-10-20 2012-07-17 Applied Materials, Inc. Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops
US7286948B1 (en) * 2006-06-16 2007-10-23 Applied Materials, Inc. Method for determining plasma characteristics
JP2008028022A (en) 2006-07-19 2008-02-07 Tokyo Electron Ltd Plasma etching method and computer readable storage medium
WO2008015738A1 (en) * 2006-08-01 2008-02-07 Shimadzu Corporation Substrate inspection and repair device, and substrate evaluation system
JP2008122929A (en) * 2006-10-20 2008-05-29 Toshiba Corp Method for creating simulation model
US8184288B2 (en) 2006-11-29 2012-05-22 Macronix International Co., Ltd. Method of depositing a silicon-containing material by utilizing a multi-step fill-in process in a deposition machine
US8520194B2 (en) 2006-11-29 2013-08-27 Macronix International Co., Ltd. Method of forming a deposited material by utilizing a multi-step deposition/etch/deposition (D/E/D) process
JP2009290150A (en) * 2008-06-02 2009-12-10 Renesas Technology Corp System and method for manufacturing semiconductor device
US8323521B2 (en) * 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US8489218B2 (en) * 2010-10-15 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber match using important variables filtered by dynamic multivariate analysis
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
KR101354343B1 (en) * 2011-11-24 2014-01-27 서울대학교산학협력단 Monitoring Method and Apparatus for Electron Energy Distribution Characteristics of Plasma
JP6262137B2 (en) * 2012-09-26 2018-01-17 株式会社日立国際電気 Integrated management system, management apparatus, information processing method and program for substrate processing apparatus
CN103020349B (en) * 2012-12-08 2015-05-06 清华大学 Modeling method of etching yield in plasma etching process
KR101405237B1 (en) * 2013-06-25 2014-06-10 현대자동차 주식회사 System for controlling motor of eco-friendly car
KR102376599B1 (en) * 2014-06-05 2022-03-21 토마스 웨스트 인코포레이티드 Centrifugal casting of polymer polish pads
CN104991581B (en) * 2015-06-08 2019-08-23 北京北方华创微电子装备有限公司 A kind of compress control method and device of processing chamber
TWI559218B (en) * 2015-12-09 2016-11-21 英業達股份有限公司 Data providing method
KR20170103661A (en) * 2016-03-04 2017-09-13 램 리써치 코포레이션 Systems and methods for reducing power reflected towards a higher frequency rf generator during a period of a lower frequency rf generator and for using a relationship to reduce reflected power
US10438805B2 (en) * 2016-12-06 2019-10-08 Tokyo Electron Limited Methods and systems for chamber matching and monitoring
KR20190048491A (en) 2017-10-31 2019-05-09 삼성전자주식회사 Method for predicting etch effect and method for determining input parameters
KR20200101919A (en) * 2017-12-27 2020-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Thin film manufacturing device, and thin film manufacturing device using neural network
US10909738B2 (en) 2018-01-05 2021-02-02 Nvidia Corporation Real-time hardware-assisted GPU tuning using machine learning
US10579764B2 (en) * 2018-06-06 2020-03-03 International Business Machines Corporation Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks
US11756840B2 (en) * 2018-09-20 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Reflectance measurement system and method thereof
JP7220573B2 (en) * 2019-01-24 2023-02-10 株式会社荏原製作所 Information processing system, information processing method, program and substrate processing apparatus
TWI713085B (en) * 2019-05-16 2020-12-11 國立交通大學 Semiconductor process result prediction method
JP2022542160A (en) * 2019-07-26 2022-09-29 ジュスン エンジニアリング カンパニー リミテッド Substrate processing apparatus and its interlock method
CN112530773B (en) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 Semiconductor processing equipment
JP2022122425A (en) * 2021-02-10 2022-08-23 東京エレクトロン株式会社 Plasma processing device and monitoring device
US11817340B2 (en) * 2021-04-28 2023-11-14 Advanced Energy Industries, Inc. System and method for improved electrostatic chuck clamping performance
CN114091848A (en) * 2021-11-04 2022-02-25 北京北方华创微电子装备有限公司 Method and system for automatically acquiring semiconductor process formula and semiconductor process equipment
CN115050644B (en) * 2022-08-17 2022-11-15 合肥晶合集成电路股份有限公司 Wafer etching method and system
CN115097737B (en) * 2022-08-24 2022-11-08 北京航空航天大学 Multi-level regulation and control method capable of being re-entered into manufacturing system

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5467883A (en) * 1992-12-14 1995-11-21 At&T Corp. Active neural network control of wafer attributes in a plasma etch process
EP0602855A1 (en) * 1992-12-14 1994-06-22 AT&T Corp. Active neural network control of wafer attributes in a plasma etch process
US5737496A (en) * 1993-11-17 1998-04-07 Lucent Technologies Inc. Active neural network control of wafer attributes in a plasma etch process
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
JP3577163B2 (en) * 1995-05-19 2004-10-13 エイ・ティ・アンド・ティ・コーポレーション Determining the end point of the plasma etching process using an active neural network
US5751582A (en) * 1995-09-25 1998-05-12 Texas Instruments Incorporated Controlling process modules using site models and monitor wafer control
JPH09266098A (en) * 1996-03-29 1997-10-07 Seiko Epson Corp Plasma condition detecting device and method, and etching terminating point detecting device and method
JPH10301979A (en) * 1997-04-30 1998-11-13 Oki Electric Ind Co Ltd Method and device for extracting model parameter
CN1299226C (en) * 1997-09-17 2007-02-07 东京电子株式会社 System and method for monitoring and controlling gas plasma process
EP0942453A3 (en) * 1998-03-11 2001-02-07 Axcelis Technologies, Inc. Monitoring of plasma constituents using optical emission spectroscopy
WO2001013401A1 (en) * 1999-08-12 2001-02-22 Infineon Technologies Ag Method for monitoring a production process for preparing a substrate in semiconductor manufacturing
WO2002003441A1 (en) * 2000-07-04 2002-01-10 Tokyo Electron Limited Operation monitoring method for treatment apparatus
JP4610021B2 (en) * 2000-07-04 2011-01-12 東京エレクトロン株式会社 Processing device operating method and processing device abnormality detection method
JP4570736B2 (en) * 2000-07-04 2010-10-27 東京エレクトロン株式会社 How to monitor operating conditions
JP4213871B2 (en) * 2001-02-01 2009-01-21 株式会社日立製作所 Manufacturing method of semiconductor device
US6627464B2 (en) * 2001-02-07 2003-09-30 Eni Technology, Inc. Adaptive plasma characterization system
JP4128339B2 (en) * 2001-03-05 2008-07-30 株式会社日立製作所 Process monitor for sample processing apparatus and method for manufacturing sample
US6616759B2 (en) * 2001-09-06 2003-09-09 Hitachi, Ltd. Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
KR20010106372A (en) * 2001-11-02 2001-11-29 진천웅 A mobile phone which has function of enlarging characters on the display panel
JP4659359B2 (en) * 2001-12-31 2011-03-30 東京エレクトロン株式会社 Material processing method and system for material processing
WO2003058687A1 (en) * 2001-12-31 2003-07-17 Tokyo Electron Limited Method of detecting, identifying and correcting process performance

Also Published As

Publication number Publication date
CN100353485C (en) 2007-12-05
TW200419631A (en) 2004-10-01
JP2006501684A (en) 2006-01-12
CN1682338A (en) 2005-10-12
US20050199341A1 (en) 2005-09-15
WO2004032194A3 (en) 2004-07-15
TWI264043B (en) 2006-10-11
AU2003279058A8 (en) 2004-04-23
KR101027183B1 (en) 2011-04-05
WO2004032194A2 (en) 2004-04-15
KR20050054985A (en) 2005-06-10

Similar Documents

Publication Publication Date Title
AU2003279058A1 (en) Method and system for analyzing data from a plasma process
AU2003273693A1 (en) System for acquiring data from a facility and method
AU2003210795A1 (en) System and method for analyzing data
AU2003217939A1 (en) Method, apparatus, and system for data modeling and processing
AU2003211035A1 (en) A plasma processing apparatus and method
AU2003230478A1 (en) A data processing apparatus and method for correlation analysis
AU2003267881A1 (en) Method and apparatus for booting a computer system
AU2003244859A1 (en) System and method for obtaining and analyzing well data
AU2003207836A1 (en) A method and apparatus for sociological data mining
AU2003220693A1 (en) A system and method for speculative tuning
AU2003215793A1 (en) System, method, and computer program product for single-handed data entry
AU2003294319A1 (en) Apparatus and method for matrix data processing
AU2003271658A1 (en) Method and system for tuning a taskscheduling process
AU2003236919A1 (en) System and method for removing particles from a well bore
AU2003271441A1 (en) Method and apparatus for data analysis
AU2003255930A1 (en) System and method for adapting an interest profile on a media system
AU2003226357A1 (en) System and method for visualizing data
AU2003279021A1 (en) Method and apparatus for analyzing serial data streams
AU2003292178A1 (en) A method of entering of data into a data processing system
AU2003239307A1 (en) Method,system and program product for locally analyzing viewing behavior
AU2002345485A1 (en) A method and apparatus for reconfiguring a server system
AU2003260869A1 (en) Data processing system and method of operation
AU2003223682A1 (en) Method and apparatus for selecting devices on a data bus
AU2003212669A1 (en) A system for analyzing dna-chips using gene ontology and a method thereof
AU2003225450A1 (en) Method and apparatus for processing data

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase