AU2003271515A8 - Minimisation of light losses and electronic shielding on integrated photodiodes - Google Patents

Minimisation of light losses and electronic shielding on integrated photodiodes

Info

Publication number
AU2003271515A8
AU2003271515A8 AU2003271515A AU2003271515A AU2003271515A8 AU 2003271515 A8 AU2003271515 A8 AU 2003271515A8 AU 2003271515 A AU2003271515 A AU 2003271515A AU 2003271515 A AU2003271515 A AU 2003271515A AU 2003271515 A8 AU2003271515 A8 AU 2003271515A8
Authority
AU
Australia
Prior art keywords
layer system
minimisation
integrated
layer
light losses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003271515A
Other versions
AU2003271515A1 (en
Inventor
Konrad Bach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2002139643 external-priority patent/DE10239643B3/en
Priority claimed from DE2002139642 external-priority patent/DE10239642B3/en
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of AU2003271515A8 publication Critical patent/AU2003271515A8/en
Publication of AU2003271515A1 publication Critical patent/AU2003271515A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention relates to an integrated circuit according to CMOS/BiCMOS technology and a method for producing the same. At least one integrated, photosensitive component and one electrical shield are provided, a second layer system (2; 3, 4) being applied to a photosensitive area (1) of the circuit (A) to be protected against an (unwanted) electrical coupling, said second layer system comprising a last layer (3) of a first sealing passivation layer system (5) according to the process, and a subsequent, transparent, electroconductive layer (4). Said layers have adjusted individual thicknesses (d3, d4) in order to obtain an optical thickness of the second layer system (2) having maximum transparency with a reduced thickness tolerance influence.
AU2003271515A 2002-08-29 2003-08-29 Minimisation of light losses and electronic shielding on integrated photodiodes Abandoned AU2003271515A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE2002139643 DE10239643B3 (en) 2002-08-29 2002-08-29 Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit
DE10239642.6 2002-08-29
DE10239643.4 2002-08-29
DE2002139642 DE10239642B3 (en) 2002-08-29 2002-08-29 Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit
PCT/DE2003/002874 WO2004021453A2 (en) 2002-08-29 2003-08-29 Minimisation of light losses and electronic shielding on integrated photodiodes

Publications (2)

Publication Number Publication Date
AU2003271515A8 true AU2003271515A8 (en) 2004-03-19
AU2003271515A1 AU2003271515A1 (en) 2004-03-19

Family

ID=31979459

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003271515A Abandoned AU2003271515A1 (en) 2002-08-29 2003-08-29 Minimisation of light losses and electronic shielding on integrated photodiodes
AU2003269691A Abandoned AU2003269691A1 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2003269691A Abandoned AU2003269691A1 (en) 2002-08-29 2003-08-29 Integrated photosensitive structures and passivation method

Country Status (5)

Country Link
EP (2) EP1532691B1 (en)
AT (1) ATE422712T1 (en)
AU (2) AU2003271515A1 (en)
DE (3) DE10393329D2 (en)
WO (1) WO2004021453A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100377360C (en) * 2004-04-14 2008-03-26 亚泰影像科技股份有限公司 Image sensor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120553A (en) * 1992-09-30 1994-04-28 New Japan Radio Co Ltd Photodiode
JP3900552B2 (en) * 1996-07-11 2007-04-04 株式会社デンソー Manufacturing method of optical sensor
AU5354698A (en) * 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
JP2908366B2 (en) * 1996-12-25 1999-06-21 山形日本電気株式会社 Method for manufacturing semiconductor device
TW504849B (en) * 1997-02-25 2002-10-01 Matsushita Electric Ind Co Ltd Optical receiver
US6043115A (en) * 1999-03-25 2000-03-28 United Microelectronics Corp. Method for avoiding interference in a CMOS sensor
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
DE10024473B4 (en) * 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optical receiver

Also Published As

Publication number Publication date
WO2004021453A2 (en) 2004-03-11
DE10393435D2 (en) 2005-06-16
AU2003269691A1 (en) 2004-03-19
EP1532691A2 (en) 2005-05-25
EP1532691B1 (en) 2009-02-11
EP1535339A2 (en) 2005-06-01
AU2003269691A8 (en) 2004-03-19
DE10393329D2 (en) 2005-06-16
AU2003271515A1 (en) 2004-03-19
ATE422712T1 (en) 2009-02-15
WO2004021453A3 (en) 2004-06-10
DE50311172D1 (en) 2009-03-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase