AU2003269691A1 - Integrated photosensitive structures and passivation method - Google Patents
Integrated photosensitive structures and passivation methodInfo
- Publication number
- AU2003269691A1 AU2003269691A1 AU2003269691A AU2003269691A AU2003269691A1 AU 2003269691 A1 AU2003269691 A1 AU 2003269691A1 AU 2003269691 A AU2003269691 A AU 2003269691A AU 2003269691 A AU2003269691 A AU 2003269691A AU 2003269691 A1 AU2003269691 A1 AU 2003269691A1
- Authority
- AU
- Australia
- Prior art keywords
- layer system
- layer
- integrated
- passivation method
- integrated photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000002161 passivation Methods 0.000 title abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention relates to an integrated circuit according to CMOS/BiCMOS technology and a method for producing the same. At least one integrated, photosensitive component and one electrical shield are provided, a second layer system (2; 3, 4) being applied to a photosensitive area (1) of the circuit (A) to be protected against an (unwanted) electrical coupling, said second layer system comprising a last layer (3) of a first sealing passivation layer system (5) according to the process, and a subsequent, transparent, electroconductive layer (4). Said layers have adjusted individual thicknesses (d3, d4) in order to obtain an optical thickness of the second layer system (2) having maximum transparency with a reduced thickness tolerance influence.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2002139643 DE10239643B3 (en) | 2002-08-29 | 2002-08-29 | Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit |
DE10239642.6 | 2002-08-29 | ||
DE10239643.4 | 2002-08-29 | ||
DE2002139642 DE10239642B3 (en) | 2002-08-29 | 2002-08-29 | Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit |
PCT/DE2003/002873 WO2004021452A2 (en) | 2002-08-29 | 2003-08-29 | Integrated photosensitive structures and passivation method |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2003269691A1 true AU2003269691A1 (en) | 2004-03-19 |
AU2003269691A8 AU2003269691A8 (en) | 2004-03-19 |
Family
ID=31979459
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003271515A Abandoned AU2003271515A1 (en) | 2002-08-29 | 2003-08-29 | Minimisation of light losses and electronic shielding on integrated photodiodes |
AU2003269691A Abandoned AU2003269691A1 (en) | 2002-08-29 | 2003-08-29 | Integrated photosensitive structures and passivation method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003271515A Abandoned AU2003271515A1 (en) | 2002-08-29 | 2003-08-29 | Minimisation of light losses and electronic shielding on integrated photodiodes |
Country Status (5)
Country | Link |
---|---|
EP (2) | EP1532691B1 (en) |
AT (1) | ATE422712T1 (en) |
AU (2) | AU2003271515A1 (en) |
DE (3) | DE10393329D2 (en) |
WO (1) | WO2004021453A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100377360C (en) * | 2004-04-14 | 2008-03-26 | 亚泰影像科技股份有限公司 | Image sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120553A (en) * | 1992-09-30 | 1994-04-28 | New Japan Radio Co Ltd | Photodiode |
JP3900552B2 (en) * | 1996-07-11 | 2007-04-04 | 株式会社デンソー | Manufacturing method of optical sensor |
AU5354698A (en) * | 1996-11-01 | 1998-05-29 | Lawrence Berkeley Laboratory | Low-resistivity photon-transparent window attached to photo-sensitive silicon detector |
JP2908366B2 (en) * | 1996-12-25 | 1999-06-21 | 山形日本電気株式会社 | Method for manufacturing semiconductor device |
TW504849B (en) * | 1997-02-25 | 2002-10-01 | Matsushita Electric Ind Co Ltd | Optical receiver |
US6043115A (en) * | 1999-03-25 | 2000-03-28 | United Microelectronics Corp. | Method for avoiding interference in a CMOS sensor |
US6407440B1 (en) * | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
DE10024473B4 (en) * | 2000-05-18 | 2007-04-19 | Vishay Semiconductor Gmbh | Optical receiver |
-
2003
- 2003-08-29 AU AU2003271515A patent/AU2003271515A1/en not_active Abandoned
- 2003-08-29 EP EP03753262A patent/EP1532691B1/en not_active Expired - Lifetime
- 2003-08-29 WO PCT/DE2003/002874 patent/WO2004021453A2/en not_active Application Discontinuation
- 2003-08-29 DE DE10393329T patent/DE10393329D2/en not_active Withdrawn - After Issue
- 2003-08-29 AU AU2003269691A patent/AU2003269691A1/en not_active Abandoned
- 2003-08-29 EP EP03750301A patent/EP1535339A2/en not_active Withdrawn
- 2003-08-29 DE DE10393435T patent/DE10393435D2/en not_active Expired - Fee Related
- 2003-08-29 AT AT03753262T patent/ATE422712T1/en not_active IP Right Cessation
- 2003-08-29 DE DE50311172T patent/DE50311172D1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2003271515A8 (en) | 2004-03-19 |
WO2004021453A2 (en) | 2004-03-11 |
DE10393435D2 (en) | 2005-06-16 |
EP1532691A2 (en) | 2005-05-25 |
EP1532691B1 (en) | 2009-02-11 |
EP1535339A2 (en) | 2005-06-01 |
AU2003269691A8 (en) | 2004-03-19 |
DE10393329D2 (en) | 2005-06-16 |
AU2003271515A1 (en) | 2004-03-19 |
ATE422712T1 (en) | 2009-02-15 |
WO2004021453A3 (en) | 2004-06-10 |
DE50311172D1 (en) | 2009-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |