AU2003252015A1 - Integrated circuit package for semiconductor devices with improved electric resistance and inductance - Google Patents

Integrated circuit package for semiconductor devices with improved electric resistance and inductance

Info

Publication number
AU2003252015A1
AU2003252015A1 AU2003252015A AU2003252015A AU2003252015A1 AU 2003252015 A1 AU2003252015 A1 AU 2003252015A1 AU 2003252015 A AU2003252015 A AU 2003252015A AU 2003252015 A AU2003252015 A AU 2003252015A AU 2003252015 A1 AU2003252015 A1 AU 2003252015A1
Authority
AU
Australia
Prior art keywords
inductance
integrated circuit
semiconductor devices
electric resistance
circuit package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003252015A
Inventor
Anup Bhalla
Mike Chang
Yueh-Se Ho
Sik K. Liu
Leeshawn Luo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpha and Omega Semiconductor Inc
Original Assignee
Alpha and Omega Semiconductor Ltd
Alpha and Omega Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpha and Omega Semiconductor Ltd, Alpha and Omega Semiconductor Inc filed Critical Alpha and Omega Semiconductor Ltd
Publication of AU2003252015A1 publication Critical patent/AU2003252015A1/en
Abandoned legal-status Critical Current

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Classifications

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    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
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    • H01L2924/1901—Structure
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    • H01L2924/19043—Component type being a resistor
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    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
AU2003252015A 2003-07-14 2003-07-14 Integrated circuit package for semiconductor devices with improved electric resistance and inductance Abandoned AU2003252015A1 (en)

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PCT/US2003/022430 WO2005017994A1 (en) 2003-07-14 2003-07-14 Integrated circuit package for semiconductor devices with improved electric resistance and inductance

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DE102005018941B4 (en) 2005-04-22 2010-07-08 Infineon Technologies Ag Semiconductor device in a standard housing and method of making the same
DE102006021959B4 (en) 2006-05-10 2011-12-29 Infineon Technologies Ag Power semiconductor device and method for its production
US8941962B2 (en) * 2011-09-13 2015-01-27 Fsp Technology Inc. Snubber circuit and method of using bipolar junction transistor in snubber circuit
US9373577B2 (en) * 2013-05-21 2016-06-21 Infineon Technologies Ag Hybrid semiconductor package
JP6582678B2 (en) * 2015-07-27 2019-10-02 三菱電機株式会社 Semiconductor device

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US5168386A (en) 1990-10-22 1992-12-01 Tencor Instruments Flat field telecentric scanner
US5168368A (en) * 1991-05-09 1992-12-01 International Business Machines Corporation Lead frame-chip package with improved configuration
JP2820645B2 (en) * 1994-08-30 1998-11-05 アナム インダストリアル カンパニー インコーポレーティド Semiconductor lead frame
US6184585B1 (en) * 1997-11-13 2001-02-06 International Rectifier Corp. Co-packaged MOS-gated device and control integrated circuit
US6621140B1 (en) 2002-02-25 2003-09-16 Rf Micro Devices, Inc. Leadframe inductors

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KR20060110857A (en) 2006-10-25
WO2005017994A1 (en) 2005-02-24
CN1839471A (en) 2006-09-27
KR20100069714A (en) 2010-06-24
KR100993735B1 (en) 2010-11-11
KR100996823B1 (en) 2010-11-26

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