AU2003249717A1 - Process for manufacturing mosfets using amorphous carbon replacement gate and structures formed in accordance therewith - Google Patents

Process for manufacturing mosfets using amorphous carbon replacement gate and structures formed in accordance therewith

Info

Publication number
AU2003249717A1
AU2003249717A1 AU2003249717A AU2003249717A AU2003249717A1 AU 2003249717 A1 AU2003249717 A1 AU 2003249717A1 AU 2003249717 A AU2003249717 A AU 2003249717A AU 2003249717 A AU2003249717 A AU 2003249717A AU 2003249717 A1 AU2003249717 A1 AU 2003249717A1
Authority
AU
Australia
Prior art keywords
amorphous carbon
structures formed
accordance therewith
replacement gate
carbon replacement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003249717A
Inventor
Scott A. Bell
Douglas J. Bonser
Darin A. Chan
Mark S. Chang
Philip A. Fischer
Pei-Yuan Gao
Christopher F. Lyons
Marina V. Plat
Marilyn I. Wright
Chih Yuh Yang
Lu You
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2003249717A1 publication Critical patent/AU2003249717A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU2003249717A 2002-07-31 2003-07-03 Process for manufacturing mosfets using amorphous carbon replacement gate and structures formed in accordance therewith Abandoned AU2003249717A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40012302P 2002-07-31 2002-07-31
US60/400,123 2002-07-31
US33547302A 2002-12-31 2002-12-31
US10/335,473 2002-12-31
PCT/US2003/021107 WO2004012256A1 (en) 2002-07-31 2003-07-03 Process for manufacturing mosfets using amorphous carbon replacement gate and structures formed in accordance therewith

Publications (1)

Publication Number Publication Date
AU2003249717A1 true AU2003249717A1 (en) 2004-02-16

Family

ID=31190861

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003249717A Abandoned AU2003249717A1 (en) 2002-07-31 2003-07-03 Process for manufacturing mosfets using amorphous carbon replacement gate and structures formed in accordance therewith

Country Status (3)

Country Link
AU (1) AU2003249717A1 (en)
TW (1) TW200403811A (en)
WO (1) WO2004012256A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390556B (en) * 2012-05-08 2016-09-21 中国科学院微电子研究所 Method, semi-conductor device manufacturing method
CN103426754B (en) * 2012-05-14 2016-03-16 中芯国际集成电路制造(上海)有限公司 The formation method of transistor
CN102779746A (en) * 2012-08-16 2012-11-14 上海华力微电子有限公司 Method for forming metal grid
CN104078363A (en) * 2013-03-29 2014-10-01 中国科学院微电子研究所 Method for manufacturing semiconductor device
CN105185713B (en) * 2015-08-26 2019-01-22 上海华力微电子有限公司 A kind of preparation method of HKMG device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391510A (en) * 1992-02-28 1995-02-21 International Business Machines Corporation Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps
US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
US6274421B1 (en) * 1998-01-09 2001-08-14 Sharp Laboratories Of America, Inc. Method of making metal gate sub-micron MOS transistor
US6090672A (en) * 1998-07-22 2000-07-18 Wanlass; Frank M. Ultra short channel damascene MOS transistors
JP2001093888A (en) * 1999-09-27 2001-04-06 Toshiba Corp Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TW200403811A (en) 2004-03-01
WO2004012256A1 (en) 2004-02-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase