AU2003235486A1 - Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film - Google Patents

Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film

Info

Publication number
AU2003235486A1
AU2003235486A1 AU2003235486A AU2003235486A AU2003235486A1 AU 2003235486 A1 AU2003235486 A1 AU 2003235486A1 AU 2003235486 A AU2003235486 A AU 2003235486A AU 2003235486 A AU2003235486 A AU 2003235486A AU 2003235486 A1 AU2003235486 A1 AU 2003235486A1
Authority
AU
Australia
Prior art keywords
chemical vapor
vapor deposition
nano
multilayer film
valve control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003235486A
Inventor
Jung Joong Lee
Seung Hoon Lee
Ju Wan Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003235486A1 publication Critical patent/AU2003235486A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
AU2003235486A 2002-04-06 2003-04-07 Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film Abandoned AU2003235486A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0018785A KR100479639B1 (en) 2002-04-06 2002-04-06 Chemical Vapor Deposition System for Depositing Multilayer Film And Method for Depositing Multilayer Film Using The Same
KR10-2002-0018785 2002-04-06
PCT/KR2003/000689 WO2003087429A1 (en) 2002-04-06 2003-04-07 Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film

Publications (1)

Publication Number Publication Date
AU2003235486A1 true AU2003235486A1 (en) 2003-10-27

Family

ID=29244708

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003235486A Abandoned AU2003235486A1 (en) 2002-04-06 2003-04-07 Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film

Country Status (4)

Country Link
KR (1) KR100479639B1 (en)
AU (1) AU2003235486A1 (en)
DE (1) DE10392487T5 (en)
WO (1) WO2003087429A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0322602D0 (en) 2003-09-26 2003-10-29 Boc Group Inc Vent-run gas switching systems
US20050145181A1 (en) * 2003-12-31 2005-07-07 Dickinson Colin J. Method and apparatus for high speed atomic layer deposition
KR101925580B1 (en) * 2011-11-15 2019-02-28 주식회사 원익아이피에스 Apparatus for wafer deposition and method for operating the same
KR20140113037A (en) * 2013-03-15 2014-09-24 주식회사 원익아이피에스 Apparatus for processing substrate and method for manufacturing complex film
KR101398884B1 (en) * 2013-12-31 2014-05-27 한국세라믹기술원 Suspension feeder for suspension plasma spraying device suitable for fabricating functionally graded coating layer
KR102593891B1 (en) * 2015-02-25 2023-10-26 코닝 인코포레이티드 Optical structures and products having multi-layer stacks with high hardness and methods for manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619351B2 (en) * 1984-08-10 1997-06-11 株式会社日立製作所 Gas flow control method
JPH02243504A (en) * 1989-03-16 1990-09-27 Kobe Steel Ltd Production of high temperature superconductive thin film
JP3500620B2 (en) * 1994-10-24 2004-02-23 株式会社ニコン Projection exposure method and apparatus
US5562776A (en) * 1994-09-19 1996-10-08 Energy Conversion Devices, Inc. Apparatus for microwave plasma enhanced physical/chemical vapor deposition
JP3768575B2 (en) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド CVD apparatus and chamber cleaning method
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
JPH10190074A (en) * 1996-12-26 1998-07-21 Komatsu Ltd Manufacture of thermoelectric material and manufacture of thermoelectric element using the same
JP2000144429A (en) * 1998-11-13 2000-05-26 Fuji Electric Co Ltd Manufacture of carbonaceous protective film
KR100671612B1 (en) * 2000-06-30 2007-01-18 주식회사 하이닉스반도체 Apparatus for depositing metal and a method for forming a metal layer using the same

Also Published As

Publication number Publication date
DE10392487T5 (en) 2005-02-17
KR100479639B1 (en) 2005-03-30
WO2003087429A1 (en) 2003-10-23
KR20030079610A (en) 2003-10-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase