AU2002349516A1 - Sub-mount and semiconductor device - Google Patents

Sub-mount and semiconductor device

Info

Publication number
AU2002349516A1
AU2002349516A1 AU2002349516A AU2002349516A AU2002349516A1 AU 2002349516 A1 AU2002349516 A1 AU 2002349516A1 AU 2002349516 A AU2002349516 A AU 2002349516A AU 2002349516 A AU2002349516 A AU 2002349516A AU 2002349516 A1 AU2002349516 A1 AU 2002349516A1
Authority
AU
Australia
Prior art keywords
mount
sub
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002349516A
Inventor
Teruo Amoh
Kenjiro Higaki
Makoto Imamura
Takashi Ishii
Akira Sasame
Yasushi Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of AU2002349516A1 publication Critical patent/AU2002349516A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/01024—Chromium [Cr]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
AU2002349516A 2002-02-18 2002-12-09 Sub-mount and semiconductor device Abandoned AU2002349516A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-40643 2002-02-18
JP2002040643A JP3779218B2 (en) 2002-02-18 2002-02-18 Submount and semiconductor device
PCT/JP2002/012870 WO2003069743A1 (en) 2002-02-18 2002-12-09 Sub-mount and semiconductor device

Publications (1)

Publication Number Publication Date
AU2002349516A1 true AU2002349516A1 (en) 2003-09-04

Family

ID=19192706

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002349516A Abandoned AU2002349516A1 (en) 2002-02-18 2002-12-09 Sub-mount and semiconductor device

Country Status (3)

Country Link
JP (1) JP3779218B2 (en)
AU (1) AU2002349516A1 (en)
WO (1) WO2003069743A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3982284B2 (en) * 2002-03-06 2007-09-26 住友電気工業株式会社 Submount and semiconductor device
JP4811629B2 (en) * 2004-07-12 2011-11-09 ソニー株式会社 Semiconductor laser device
US7795732B2 (en) * 2005-02-07 2010-09-14 Kabushiki Kaisha Toshiba Ceramic wiring board and process for producing the same, and semiconductor device using the same
JP2008141172A (en) * 2006-11-10 2008-06-19 Ricoh Printing Systems Ltd Semiconductor laser device, optical scanner, and image forming apparatus
JP2013093341A (en) * 2010-02-26 2013-05-16 Sanyo Electric Co Ltd Electronic device
JP2011222675A (en) 2010-04-07 2011-11-04 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same
WO2015033557A1 (en) * 2013-09-05 2015-03-12 パナソニックＩｐマネジメント株式会社 Light-emitting device
JP6305127B2 (en) * 2014-03-12 2018-04-04 三菱電機株式会社 Semiconductor laser light source
JP2018206788A (en) * 2017-05-30 2018-12-27 富士通株式会社 Electronic device and manufacturing method thereof
WO2019180773A1 (en) * 2018-03-19 2019-09-26 三菱電機株式会社 Method for manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04186688A (en) * 1990-11-17 1992-07-03 Seiko Epson Corp Semiconductor laser
JPH0513820A (en) * 1991-07-02 1993-01-22 Omron Corp Semiconductor device
JP2874819B2 (en) * 1991-12-03 1999-03-24 ローム株式会社 Semiconductor device
JP3190718B2 (en) * 1992-01-14 2001-07-23 株式会社東芝 Submount for semiconductor laser

Also Published As

Publication number Publication date
JP2002359427A (en) 2002-12-13
WO2003069743A1 (en) 2003-08-21
JP3779218B2 (en) 2006-05-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase