AU2002218800A1 - Magnetoresistive trimming of gmr circuits - Google Patents

Magnetoresistive trimming of gmr circuits

Info

Publication number
AU2002218800A1
AU2002218800A1 AU2002218800A AU1880002A AU2002218800A1 AU 2002218800 A1 AU2002218800 A1 AU 2002218800A1 AU 2002218800 A AU2002218800 A AU 2002218800A AU 1880002 A AU1880002 A AU 1880002A AU 2002218800 A1 AU2002218800 A1 AU 2002218800A1
Authority
AU
Australia
Prior art keywords
gmr
circuits
magnetoresistive
trimming
magnetoresistive trimming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002218800A
Other languages
English (en)
Inventor
Richard Spitzer
E. James Torok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INTERGRATED MAGNETOELECTRONICS Corp
Original Assignee
INTERGRATED MAGNETOELECTRONICS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INTERGRATED MAGNETOELECTRONICS filed Critical INTERGRATED MAGNETOELECTRONICS
Publication of AU2002218800A1 publication Critical patent/AU2002218800A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/23—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by opening or closing resistor geometric tracks of predetermined resistive values, e.g. snapistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/13—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material current responsive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
AU2002218800A 2000-07-11 2001-06-27 Magnetoresistive trimming of gmr circuits Abandoned AU2002218800A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21733700P 2000-07-11 2000-07-11
US60/217337 2000-07-11
US09/883,645 US6469927B2 (en) 2000-07-11 2001-06-18 Magnetoresistive trimming of GMR circuits
US09/883645 2001-06-18
PCT/US2001/020665 WO2002005470A2 (fr) 2000-07-11 2001-06-27 Ajustage magnetoresistant de circuits a resistance magnetique geante

Publications (1)

Publication Number Publication Date
AU2002218800A1 true AU2002218800A1 (en) 2002-01-21

Family

ID=26911847

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002218800A Abandoned AU2002218800A1 (en) 2000-07-11 2001-06-27 Magnetoresistive trimming of gmr circuits

Country Status (5)

Country Link
US (1) US6469927B2 (fr)
EP (1) EP1323166A2 (fr)
JP (1) JP2004503119A (fr)
AU (1) AU2002218800A1 (fr)
WO (1) WO2002005470A2 (fr)

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US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US6538437B2 (en) * 2000-07-11 2003-03-25 Integrated Magnetoelectronics Corporation Low power magnetic anomaly sensor
US6738284B2 (en) * 2001-03-23 2004-05-18 Integrated Magnetoelectronics Corporation Transpinnor-based sample-and-hold circuit and applications
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US6859063B2 (en) * 2002-04-11 2005-02-22 Integrated Magnetoelectronics Corporation Transpinnor-based transmission line transceivers and applications
US6992919B2 (en) 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
US7239123B2 (en) * 2003-10-09 2007-07-03 Hewlett-Packard Development Company, L.P. Multiplexed dual-purpose magnetoresistive sensor and method of measuring current and temperature
US7220968B2 (en) * 2005-01-19 2007-05-22 Integrated Magnetoelectronics Corporation Radiation detector having all-metal circuitry operation of which is based on electron spin
US7425824B2 (en) * 2005-05-20 2008-09-16 Honeywell International Inc. Magnetoresistive sensor
CN100409444C (zh) * 2005-07-06 2008-08-06 中国科学院上海硅酸盐研究所 基于电阻变化的非挥发性存储器、切换方法及制备方法
US7126327B1 (en) * 2005-07-22 2006-10-24 Honeywell International Inc. Asymmetrical AMR wheatstone bridge layout for position sensor
FR2889623A1 (fr) * 2005-08-03 2007-02-09 St Microelectronics Sa Resistance variable
US7839605B2 (en) * 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
US7911830B2 (en) * 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US7812596B2 (en) * 2007-08-16 2010-10-12 Honeywell International Inc. Two-dimensional position sensing system
US8619467B2 (en) * 2010-02-22 2013-12-31 Integrated Magnetoelectronics High GMR structure with low drive fields
US9134386B2 (en) * 2011-06-28 2015-09-15 Oracle International Corporation Giant magnetoresistive sensor having horizontal stabilizer
FR3004848B1 (fr) * 2013-04-22 2015-06-05 Centre Nat Rech Scient Procede de modification de la valeur d'une resistance electrique comportant un materiau ferromagnetique
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
RU2633010C1 (ru) * 2016-05-04 2017-10-11 Акционерное общество "Научно-производственное объединение измерительной техники" Магниторезистивный датчик
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972786A (en) 1974-06-28 1976-08-03 Ampex Corporation Mechanically enhanced magnetic memory
US5051695A (en) * 1984-06-25 1991-09-24 The United States Of Americas As Represented By The Secretary Of The Navy Thin film vector magnetometer
US4751677A (en) 1986-09-16 1988-06-14 Honeywell Inc. Differential arrangement magnetic memory cell
US4829476A (en) 1987-07-28 1989-05-09 Honeywell Inc. Differential magnetoresistive memory sensing
US5173873A (en) 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
JPH04273486A (ja) * 1991-02-28 1992-09-29 Nec Corp 磁気抵抗素子およびその中点電圧の調整方法
US5422621A (en) 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
FR2712420B1 (fr) 1993-11-08 1995-12-15 Commissariat Energie Atomique Tête magnétique de lecture à élément magnétorésistant multicouche et à concentrateur et son procédé de réalisation.
US5477143A (en) * 1994-01-11 1995-12-19 Honeywell Inc. Sensor with magnetoresistors disposed on a plane which is parallel to and displaced from the magnetic axis of a permanent magnet
US5650889A (en) 1994-02-07 1997-07-22 Hitachi, Ltd. Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium
EP0685746A3 (fr) 1994-05-30 1996-12-04 Sony Corp Dispositif à effet magnétorésistant ayant une résistance thermique améliorée.
JP2901501B2 (ja) 1994-08-29 1999-06-07 ティーディーケイ株式会社 磁性多層膜およびその製造方法ならびに磁気抵抗効果素子
US5587943A (en) 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5652445A (en) 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5654566A (en) 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5585986A (en) 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US6278594B1 (en) 1998-10-13 2001-08-21 Storage Technology Corporation Dual element magnetoresistive read head with integral element stabilization
US6292336B1 (en) 1999-09-30 2001-09-18 Headway Technologies, Inc. Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient

Also Published As

Publication number Publication date
WO2002005470A3 (fr) 2002-04-04
EP1323166A2 (fr) 2003-07-02
JP2004503119A (ja) 2004-01-29
US6469927B2 (en) 2002-10-22
WO2002005470A2 (fr) 2002-01-17
US20020029462A1 (en) 2002-03-14

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