AU2002218511A1 - Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body - Google Patents

Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body

Info

Publication number
AU2002218511A1
AU2002218511A1 AU2002218511A AU1851102A AU2002218511A1 AU 2002218511 A1 AU2002218511 A1 AU 2002218511A1 AU 2002218511 A AU2002218511 A AU 2002218511A AU 1851102 A AU1851102 A AU 1851102A AU 2002218511 A1 AU2002218511 A1 AU 2002218511A1
Authority
AU
Australia
Prior art keywords
capacitor
sintered body
niobium powder
niobium
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002218511A
Other languages
English (en)
Inventor
Nobuyuki Nagato
Kazumi Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000366658A external-priority patent/JP4521849B2/ja
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of AU2002218511A1 publication Critical patent/AU2002218511A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • H01G9/0525Powder therefor
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0031Matrix based on refractory metals, W, Mo, Nb, Hf, Ta, Zr, Ti, V or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C04B2235/3253Substoichiometric niobium or tantalum oxides, e.g. NbO
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40Metallic constituents or additives not added as binding phase
    • C04B2235/404Refractory metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
AU2002218511A 2000-12-01 2001-11-30 Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body Abandoned AU2002218511A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000366658A JP4521849B2 (ja) 2000-12-01 2000-12-01 コンデンサ用ニオブ粉と該ニオブ粉を用いた焼結体および該焼結体を用いたコンデンサ
JP2000-366658 2000-12-01
US26896401P 2001-02-16 2001-02-16
US60268964 2001-02-16
PCT/JP2001/010485 WO2002045107A1 (fr) 2000-12-01 2001-11-30 Poudre de niobium pour condensateur, corps fritte de cette poudre et condensateur utilisant le corps fritte

Publications (1)

Publication Number Publication Date
AU2002218511A1 true AU2002218511A1 (en) 2002-06-11

Family

ID=26605052

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002218511A Abandoned AU2002218511A1 (en) 2000-12-01 2001-11-30 Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body

Country Status (5)

Country Link
US (2) US6663687B2 (fr)
EP (1) EP1275124B1 (fr)
KR (1) KR100812689B1 (fr)
AU (1) AU2002218511A1 (fr)
WO (1) WO2002045107A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10041901A1 (de) * 2000-08-25 2002-03-07 Starck H C Gmbh Kondensatoranode auf Basis Niob
KR100812689B1 (ko) * 2000-12-01 2008-03-13 쇼와 덴코 가부시키가이샤 커패시터용 니오브 분말, 그 소결체 및 소결체를 이용한커패시터
JP2004143477A (ja) * 2002-10-22 2004-05-20 Cabot Supermetal Kk ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ
KR100492268B1 (ko) * 2002-11-21 2005-05-30 한국전기연구원 전기화학 커패시터용 철계 금속산화물 전극재료의 제조방법
WO2004103906A2 (fr) * 2003-05-19 2004-12-02 Cabot Corporation Procedes de fabrication d'un oxyde metallique de niobium et oxydes de niobium a teneur reduite en oxygene
US20050057484A1 (en) * 2003-09-15 2005-03-17 Diefenbaugh Paul S. Automatic image luminance control with backlight adjustment
DE602006005483D1 (de) 2005-06-03 2009-04-16 Starck H C Gmbh Niobiumsuboxide
WO2007020464A1 (fr) * 2005-08-19 2007-02-22 Avx Limited Condensateurs à semi-conducteurs et leur procédé de fabrication
GB2429583B (en) * 2005-08-26 2011-03-02 Avx Ltd Solid state capacitors and method of manufacturing them
GB0517952D0 (en) 2005-09-02 2005-10-12 Avx Ltd Method of forming anode bodies for solid state capacitors
JP4454042B2 (ja) * 2008-04-21 2010-04-21 テイカ株式会社 導電性組成物の分散液、導電性組成物および固体電解コンデンサ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448447A (en) 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
JP3254163B2 (ja) * 1997-02-28 2002-02-04 昭和電工株式会社 コンデンサ
US6051044A (en) 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
JP3196832B2 (ja) 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法
US6416730B1 (en) * 1998-09-16 2002-07-09 Cabot Corporation Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides
DE19847012A1 (de) * 1998-10-13 2000-04-20 Starck H C Gmbh Co Kg Niobpulver und Verfahren zu dessen Herstellung
AU2571200A (en) * 1999-02-16 2000-09-04 Showa Denko Kabushiki Kaisha Niobium powder, niobium sintered body, capacitor comprised of the sintered body,and method for manufacturing the capacitor
JP2000269091A (ja) * 1999-03-17 2000-09-29 Showa Kyabotto Super Metal Kk 電解コンデンサ用金属粉末ならびにこれを用いた電解コンデンサ用陽極体および電解コンデンサ
BR0009107A (pt) * 1999-03-19 2002-12-31 Cabot Corp Método para produzir pó de nióbio e outros pós metálicos através de moagem
US6375704B1 (en) * 1999-05-12 2002-04-23 Cabot Corporation High capacitance niobium powders and electrolytic capacitor anodes
KR100812689B1 (ko) * 2000-12-01 2008-03-13 쇼와 덴코 가부시키가이샤 커패시터용 니오브 분말, 그 소결체 및 소결체를 이용한커패시터

Also Published As

Publication number Publication date
US20030007313A1 (en) 2003-01-09
US6663687B2 (en) 2003-12-16
US20050257642A1 (en) 2005-11-24
US7208027B2 (en) 2007-04-24
EP1275124B1 (fr) 2005-05-04
EP1275124A1 (fr) 2003-01-15
EP1275124A4 (fr) 2004-03-17
WO2002045107A1 (fr) 2002-06-06
KR20020079801A (ko) 2002-10-19
KR100812689B1 (ko) 2008-03-13

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