AU2001290839A1 - Method for selective metal film layer removal using carbon dioxide jet spray - Google Patents

Method for selective metal film layer removal using carbon dioxide jet spray

Info

Publication number
AU2001290839A1
AU2001290839A1 AU2001290839A AU9083901A AU2001290839A1 AU 2001290839 A1 AU2001290839 A1 AU 2001290839A1 AU 2001290839 A AU2001290839 A AU 2001290839A AU 9083901 A AU9083901 A AU 9083901A AU 2001290839 A1 AU2001290839 A1 AU 2001290839A1
Authority
AU
Australia
Prior art keywords
layer
photoresist
metal
metal film
spray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001290839A
Inventor
Charles W. Bowers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eco-Snow Systems Inc
Original Assignee
Eco-Snow Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eco-Snow Systems Inc filed Critical Eco-Snow Systems Inc
Publication of AU2001290839A1 publication Critical patent/AU2001290839A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only

Abstract

A method for the selective removal of the metal film layer accumulated upon a photoresist layer during processing of substrates using a stream of carbon dioxide spray without disturbing conductor portions is provided. A constant stream of high pressure CO2 snow is applied to the metal film layer thereby rapidly cooling the metal layer on top of said resist layer causing it to shrink rapidly, and to debond, and peel from the photoresist layer underneath. The temperature of the substrate is raised and maintained at significantly higher than room temperature. Continuing the application of the CO2 spray causes thermal shock to the photoresist under the metalized layer causing large cracks in the remaining metal layer portions, said cracks typically including at least one loose metal edge. The CO2 spray is continually applied to the cracks thereby peeling away the remaining metal portions, leaving the exposed photoresist and underlying surface features. Preferably, continued treatment of the surface with CO2 snow particles erodes a surface layer of the photoresist and heavily cross-linked layers created during the metalization process. After the metal layer and the surface layer of the photoresist are removed, a simple chemical strip, such as acetone, completely removes all the remaining resist, leaving the wafer with undamaged conductor portions.
AU2001290839A 2000-09-12 2001-09-12 Method for selective metal film layer removal using carbon dioxide jet spray Abandoned AU2001290839A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09660354 2000-09-12
US09/660,354 US6500758B1 (en) 2000-09-12 2000-09-12 Method for selective metal film layer removal using carbon dioxide jet spray
PCT/US2001/028568 WO2002023602A1 (en) 2000-09-12 2001-09-12 Method for selective metal film layer removal using carbon dioxide jet spray

Publications (1)

Publication Number Publication Date
AU2001290839A1 true AU2001290839A1 (en) 2002-03-26

Family

ID=24649190

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001290839A Abandoned AU2001290839A1 (en) 2000-09-12 2001-09-12 Method for selective metal film layer removal using carbon dioxide jet spray

Country Status (10)

Country Link
US (1) US6500758B1 (en)
EP (1) EP1317767B1 (en)
JP (1) JP4009533B2 (en)
CN (1) CN1312731C (en)
AT (1) ATE354864T1 (en)
AU (1) AU2001290839A1 (en)
CA (1) CA2422062C (en)
DE (1) DE60126790T2 (en)
TW (1) TW520527B (en)
WO (1) WO2002023602A1 (en)

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US20070089761A1 (en) * 2005-10-21 2007-04-26 Souvik Banerjee Non-plasma method of removing photoresist from a substrate
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WO2015061035A1 (en) 2013-10-22 2015-04-30 Tosoh Smd, Inc. Optimized textured surfaces and methods of optimizing
CN105023841B (en) * 2014-04-23 2017-12-26 沈阳芯源微电子设备有限公司 A kind of crystal column surface tears gold and removes gluing method
KR20160057966A (en) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 Processing apparatus, nozzle and dicing apparatus
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
JP6305355B2 (en) 2015-01-28 2018-04-04 株式会社東芝 Device manufacturing method
JP6545511B2 (en) 2015-04-10 2019-07-17 株式会社東芝 Processing unit
DE102015117558A1 (en) * 2015-10-15 2017-04-20 Lpkf Laser & Electronics Ag Process for producing structured coatings on a molded part and apparatus for carrying out the process
CN106944817B (en) * 2017-04-01 2023-09-22 宁波华斯特林电机制造有限公司 Mobile phone screen separating device
KR20200041829A (en) * 2017-09-12 2020-04-22 어플라이드 머티어리얼스, 인코포레이티드 Removal of selective deposition defects by chemical etching
US11033930B2 (en) 2018-01-08 2021-06-15 Applied Materials, Inc. Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition
US11124659B2 (en) * 2018-01-30 2021-09-21 Lam Research Corporation Method to selectively pattern a surface for plasma resistant coat applications
CN108389784B (en) * 2018-02-26 2019-04-30 清华大学 The preparation method of patterned metal layer
CN114460819B (en) * 2022-01-14 2024-01-26 北京量子信息科学研究院 Alignment mark for electron beam exposure and preparation method thereof

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Also Published As

Publication number Publication date
EP1317767A1 (en) 2003-06-11
US6500758B1 (en) 2002-12-31
TW520527B (en) 2003-02-11
ATE354864T1 (en) 2007-03-15
CN1502118A (en) 2004-06-02
WO2002023602A1 (en) 2002-03-21
JP2004521482A (en) 2004-07-15
EP1317767B1 (en) 2007-02-21
JP4009533B2 (en) 2007-11-14
CN1312731C (en) 2007-04-25
DE60126790D1 (en) 2007-04-05
DE60126790T2 (en) 2007-10-31
CA2422062C (en) 2011-03-08
CA2422062A1 (en) 2002-03-21

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