AU2001290065A1 - Method and system for determining pressure compensation factors in an ion implanter - Google Patents

Method and system for determining pressure compensation factors in an ion implanter

Info

Publication number
AU2001290065A1
AU2001290065A1 AU2001290065A AU9006501A AU2001290065A1 AU 2001290065 A1 AU2001290065 A1 AU 2001290065A1 AU 2001290065 A AU2001290065 A AU 2001290065A AU 9006501 A AU9006501 A AU 9006501A AU 2001290065 A1 AU2001290065 A1 AU 2001290065A1
Authority
AU
Australia
Prior art keywords
pressure compensation
ion implanter
compensation factors
determining pressure
determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001290065A
Other languages
English (en)
Inventor
Given Not
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2001290065A1 publication Critical patent/AU2001290065A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Measuring Fluid Pressure (AREA)
AU2001290065A 2000-09-20 2001-09-19 Method and system for determining pressure compensation factors in an ion implanter Abandoned AU2001290065A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23408800P 2000-09-20 2000-09-20
US60/234,088 2000-09-20
PCT/GB2001/004199 WO2002025722A2 (en) 2000-09-20 2001-09-19 Method and system for determining pressure compensation factors in an ion implanter

Publications (1)

Publication Number Publication Date
AU2001290065A1 true AU2001290065A1 (en) 2002-04-02

Family

ID=22879860

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001290065A Abandoned AU2001290065A1 (en) 2000-09-20 2001-09-19 Method and system for determining pressure compensation factors in an ion implanter

Country Status (7)

Country Link
US (1) US6657209B2 (zh)
EP (1) EP1320882A2 (zh)
JP (1) JP5131576B2 (zh)
KR (1) KR100786914B1 (zh)
AU (1) AU2001290065A1 (zh)
TW (1) TW514953B (zh)
WO (1) WO2002025722A2 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP2005005098A (ja) * 2003-06-11 2005-01-06 Sumitomo Eaton Noba Kk イオン注入装置及びその制御方法
US7009193B2 (en) * 2003-10-31 2006-03-07 Infineon Technologies Richmond, Lp Utilization of an ion gauge in the process chamber of a semiconductor ion implanter
TWI225272B (en) * 2003-11-04 2004-12-11 Promos Technologies Inc Method of controlling implanting dosage and method of controlling pressure compensate factor in-situ
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
US6870170B1 (en) * 2004-03-04 2005-03-22 Applied Materials, Inc. Ion implant dose control
GB2432040B (en) * 2004-03-04 2007-11-28 Applied Materials Inc Ion implant dose control
US6984832B2 (en) * 2004-04-15 2006-01-10 Axcelis Technologies, Inc. Beam angle control in a batch ion implantation system
US7173260B2 (en) * 2004-12-22 2007-02-06 Axcelis Technologies, Inc. Removing byproducts of physical and chemical reactions in an ion implanter
US7557363B2 (en) * 2006-06-02 2009-07-07 Axcelis Technologies, Inc. Closed loop dose control for ion implantation
KR100779383B1 (ko) * 2006-12-11 2007-11-23 동부일렉트로닉스 주식회사 이온주입기의 빔 에퍼처 디플렉터
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
EP2487552A1 (de) * 2011-02-14 2012-08-15 Schneider GmbH & Co. KG Verfahren und Vorrichtung zur Regelung eines Antriebs für ein Werkzeug oder Werkstück mit Anwendung einer Vorsteuerung
US9315892B2 (en) * 2013-03-15 2016-04-19 Taiwan Semiconductor Manufacturing Company Limited Method and apparatus for controlling beam angle during ion implantation of a semiconductor wafer based upon pressure
US9679739B2 (en) * 2014-12-26 2017-06-13 Axcelis Technologies, Inc. Combined electrostatic lens system for ion implantation
JP6675789B2 (ja) * 2017-02-27 2020-04-01 住友重機械イオンテクノロジー株式会社 イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587433A (en) * 1984-06-27 1986-05-06 Eaton Corporation Dose control apparatus
US4539217A (en) 1984-06-27 1985-09-03 Eaton Corporation Dose control method
JPH08264152A (ja) * 1995-03-27 1996-10-11 Fujitsu Ltd イオンビーム電流の補正方法、イオン注入方法及び装置
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
JP3006535B2 (ja) * 1997-04-07 2000-02-07 日本電気株式会社 イオン注入方法および装置
GB2325561B (en) 1997-05-20 2001-10-17 Applied Materials Inc Apparatus for and methods of implanting desired chemical species in semiconductor substrates
JPH1116849A (ja) * 1997-06-25 1999-01-22 Sony Corp イオン注入方法およびイオン注入装置
US5998798A (en) * 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
US6297510B1 (en) * 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control

Also Published As

Publication number Publication date
US20020130277A1 (en) 2002-09-19
WO2002025722A2 (en) 2002-03-28
TW514953B (en) 2002-12-21
JP5131576B2 (ja) 2013-01-30
KR100786914B1 (ko) 2007-12-17
US6657209B2 (en) 2003-12-02
EP1320882A2 (en) 2003-06-25
KR20030038757A (ko) 2003-05-16
JP2004510296A (ja) 2004-04-02
WO2002025722A3 (en) 2002-10-17

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