AU2001288591A1 - Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods - Google Patents

Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Info

Publication number
AU2001288591A1
AU2001288591A1 AU2001288591A AU8859101A AU2001288591A1 AU 2001288591 A1 AU2001288591 A1 AU 2001288591A1 AU 2001288591 A AU2001288591 A AU 2001288591A AU 8859101 A AU8859101 A AU 8859101A AU 2001288591 A1 AU2001288591 A1 AU 2001288591A1
Authority
AU
Australia
Prior art keywords
polishing
tungsten
slurry
semiconductor device
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288591A
Inventor
Dinesh Chopra
Nishant Sinha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001288591A1 publication Critical patent/AU2001288591A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AU2001288591A 2000-08-30 2001-08-30 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods Abandoned AU2001288591A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/651,808 US6602117B1 (en) 2000-08-30 2000-08-30 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US09/651,808 2000-08-30
PCT/US2001/027155 WO2002018099A2 (en) 2000-08-30 2001-08-30 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Publications (1)

Publication Number Publication Date
AU2001288591A1 true AU2001288591A1 (en) 2002-03-13

Family

ID=24614304

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288591A Abandoned AU2001288591A1 (en) 2000-08-30 2001-08-30 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Country Status (7)

Country Link
US (4) US6602117B1 (en)
EP (1) EP1314194A2 (en)
JP (1) JP2004507899A (en)
KR (2) KR100869044B1 (en)
CN (1) CN1291462C (en)
AU (1) AU2001288591A1 (en)
WO (1) WO2002018099A2 (en)

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US6833575B2 (en) * 2002-08-29 2004-12-21 Micron Technology, Inc. Dopant barrier for doped glass in memory devices
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US8853830B2 (en) 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
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US8691664B2 (en) * 2009-04-20 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Backside process for a substrate
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CN104400624B (en) * 2014-10-20 2016-11-23 南京航空航天大学 The processing method of concretion abrasive chemically mechanical polishing copper
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CN111805413A (en) * 2020-07-23 2020-10-23 中国科学院微电子研究所 Chemical mechanical polishing method

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Also Published As

Publication number Publication date
US6830500B2 (en) 2004-12-14
EP1314194A2 (en) 2003-05-28
KR20030036740A (en) 2003-05-09
US6602117B1 (en) 2003-08-05
US20040014318A1 (en) 2004-01-22
US20050153556A1 (en) 2005-07-14
US20020123299A1 (en) 2002-09-05
WO2002018099A2 (en) 2002-03-07
CN1291462C (en) 2006-12-20
KR100854258B1 (en) 2008-08-26
CN1468446A (en) 2004-01-14
WO2002018099A3 (en) 2002-10-31
KR100869044B1 (en) 2008-11-17
KR20070049690A (en) 2007-05-11
JP2004507899A (en) 2004-03-11

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