AU2001284254A1 - Nanoelectronic devices - Google Patents
Nanoelectronic devicesInfo
- Publication number
- AU2001284254A1 AU2001284254A1 AU2001284254A AU8425401A AU2001284254A1 AU 2001284254 A1 AU2001284254 A1 AU 2001284254A1 AU 2001284254 A AU2001284254 A AU 2001284254A AU 8425401 A AU8425401 A AU 8425401A AU 2001284254 A1 AU2001284254 A1 AU 2001284254A1
- Authority
- AU
- Australia
- Prior art keywords
- conductance
- paths
- path
- electron flow
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000004044 response Effects 0.000 claims description 14
- 239000000523 sample Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 230000009471 action Effects 0.000 claims description 7
- 230000001419 dependent effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002096 quantum dot Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 description 15
- 238000004364 calculation method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000007667 floating Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005421 electrostatic potential Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012821 model calculation Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
- Theoretical Computer Science (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Junction Field-Effect Transistors (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0021506A GB0021506D0 (en) | 2000-09-01 | 2000-09-01 | Electronic devices |
| GB0021506 | 2000-09-01 | ||
| GB0029902 | 2000-12-07 | ||
| GB0029902A GB0029902D0 (en) | 2000-12-07 | 2000-12-07 | Electronic devices |
| GB0107409A GB0107409D0 (en) | 2001-03-23 | 2001-03-23 | Electronic devices |
| GB0107409 | 2001-03-23 | ||
| PCT/GB2001/003954 WO2002019436A1 (fr) | 2000-09-01 | 2001-09-03 | Dispositifs nano-electroniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001284254A1 true AU2001284254A1 (en) | 2002-03-13 |
Family
ID=27255868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001284254A Abandoned AU2001284254A1 (en) | 2000-09-01 | 2001-09-03 | Nanoelectronic devices |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20040027154A1 (fr) |
| EP (1) | EP1316114A1 (fr) |
| JP (1) | JP2004508718A (fr) |
| KR (1) | KR20030029154A (fr) |
| CN (1) | CN1471731A (fr) |
| AU (1) | AU2001284254A1 (fr) |
| CA (1) | CA2420782A1 (fr) |
| TW (1) | TW514968B (fr) |
| WO (1) | WO2002019436A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0109782D0 (en) * | 2001-04-20 | 2001-06-13 | Btg Int Ltd | Nanoelectronic devices and circuits |
| WO2008097339A2 (fr) * | 2006-07-24 | 2008-08-14 | University Of Rochester | Transistor de déviation en régime balistique et circuits logiques à base de ce transistor |
| ATE526591T1 (de) * | 2008-02-26 | 2011-10-15 | Univ Wuerzburg J Maximilians | Sensor für elektromagnetische grössen und verfahren zur messung elektromagnetischer grössen |
| GB2462693B (en) * | 2008-07-31 | 2013-06-19 | Pragmatic Printing Ltd | Forming electrically insulative regions |
| EP2166366A1 (fr) | 2008-09-23 | 2010-03-24 | Hitachi Ltd. | Capteur de champ magnétique |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0411784A (ja) * | 1990-04-28 | 1992-01-16 | Fujitsu Ltd | 量子ポイントコンタクト装置およびその製造方法 |
| EP0461867A2 (fr) * | 1990-06-13 | 1991-12-18 | Fujitsu Limited | Dispositif à électrons quantiques basé sur la réfraction d'ondes électroniques |
| SE468694B (sv) * | 1991-06-28 | 1993-03-01 | Ericsson Telefon Ab L M | Kvantvaagledande elektronisk omkopplare |
| JPH05315598A (ja) * | 1992-05-08 | 1993-11-26 | Fujitsu Ltd | 半導体装置 |
| GB9311111D0 (en) * | 1993-05-28 | 1993-07-14 | Hitachi Europ Ltd | Quantum structure devices |
| SE513864C2 (sv) * | 1995-09-01 | 2000-11-20 | Ericsson Telefon Ab L M | Logikkretsar innefattande Y-grenelektronvågomkopplare |
| DE19757525C2 (de) * | 1997-12-23 | 2002-03-07 | Axel Lorke | Nichtlineares elektronisches Bauteil |
-
2001
- 2001-08-31 TW TW090121648A patent/TW514968B/zh not_active IP Right Cessation
- 2001-09-03 CN CNA018181155A patent/CN1471731A/zh active Pending
- 2001-09-03 AU AU2001284254A patent/AU2001284254A1/en not_active Abandoned
- 2001-09-03 KR KR10-2003-7003025A patent/KR20030029154A/ko not_active Application Discontinuation
- 2001-09-03 EP EP01963223A patent/EP1316114A1/fr not_active Withdrawn
- 2001-09-03 CA CA002420782A patent/CA2420782A1/fr not_active Abandoned
- 2001-09-03 JP JP2002524232A patent/JP2004508718A/ja active Pending
- 2001-09-03 US US10/363,047 patent/US20040027154A1/en not_active Abandoned
- 2001-09-03 WO PCT/GB2001/003954 patent/WO2002019436A1/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002019436A1 (fr) | 2002-03-07 |
| CN1471731A (zh) | 2004-01-28 |
| TW514968B (en) | 2002-12-21 |
| CA2420782A1 (fr) | 2002-03-07 |
| EP1316114A1 (fr) | 2003-06-04 |
| JP2004508718A (ja) | 2004-03-18 |
| US20040027154A1 (en) | 2004-02-12 |
| KR20030029154A (ko) | 2003-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4 | Application lapsed section 142(2)(d) - no continuation fee paid for the application |