AU2001283506A1 - Methods to predict and correct resist heating during lithography - Google Patents

Methods to predict and correct resist heating during lithography

Info

Publication number
AU2001283506A1
AU2001283506A1 AU2001283506A AU8350601A AU2001283506A1 AU 2001283506 A1 AU2001283506 A1 AU 2001283506A1 AU 2001283506 A AU2001283506 A AU 2001283506A AU 8350601 A AU8350601 A AU 8350601A AU 2001283506 A1 AU2001283506 A1 AU 2001283506A1
Authority
AU
Australia
Prior art keywords
predict
methods
heating during
during lithography
resist heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283506A
Other languages
English (en)
Inventor
Robert Innes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of AU2001283506A1 publication Critical patent/AU2001283506A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001283506A 2000-07-31 2001-07-25 Methods to predict and correct resist heating during lithography Abandoned AU2001283506A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09629078 2000-07-31
US09/629,078 US6379851B1 (en) 2000-07-31 2000-07-31 Methods to predict and correct resist heating during lithography
PCT/US2001/041429 WO2002011175A1 (en) 2000-07-31 2001-07-25 Methods to predict and correct resist heating during lithography

Publications (1)

Publication Number Publication Date
AU2001283506A1 true AU2001283506A1 (en) 2002-02-13

Family

ID=24521488

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283506A Abandoned AU2001283506A1 (en) 2000-07-31 2001-07-25 Methods to predict and correct resist heating during lithography

Country Status (6)

Country Link
US (1) US6379851B1 (ko)
EP (1) EP1305817A1 (ko)
JP (1) JP2004505462A (ko)
KR (1) KR20020047197A (ko)
AU (1) AU2001283506A1 (ko)
WO (1) WO2002011175A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720565B2 (en) * 1999-06-30 2004-04-13 Applied Materials, Inc. Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
JP3391763B2 (ja) * 2000-03-03 2003-03-31 沖電気工業株式会社 マスクの製造方法
US6822814B2 (en) * 2000-11-10 2004-11-23 Jpmorgan Chase Bank, As Collateral Agent Write head collision detection using MR read element in disc drives
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
US8893061B2 (en) * 2009-01-30 2014-11-18 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5894856B2 (ja) * 2012-05-22 2016-03-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI534528B (zh) * 2013-03-27 2016-05-21 Nuflare Technology Inc Drawing an amount of the charged particle beam to obtain the modulation factor of a charged particle beam irradiation apparatus and method
JP2016184605A (ja) * 2015-03-25 2016-10-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び描画データ作成方法
US10032603B2 (en) 2015-09-07 2018-07-24 Nuflare Technology, Inc. Charged particle beam lithography apparatus and charged particle beam lithography method
TWI597764B (zh) * 2015-09-07 2017-09-01 Nuflare Technology Inc Charged particle beam drawing device and charged particle beam drawing method
US10460071B2 (en) * 2015-11-04 2019-10-29 D2S, Inc. Shaped beam lithography including temperature effects
JP7547685B1 (ja) 2023-09-21 2024-09-09 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画領域の実効温度算出方法、マルチ荷電粒子ビーム描画方法、プログラムを一時的で無く記録した読み取り可能な記録媒体、及びマルチ荷電粒子ビーム描画装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204932A (ja) * 1985-03-08 1986-09-11 Fujitsu Ltd 半導体装置の製造方法
US6274290B1 (en) * 1997-01-28 2001-08-14 Etec Systems, Inc. Raster scan gaussian beam writing strategy and method for pattern generation
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
US6373071B1 (en) * 1999-06-30 2002-04-16 Applied Materials, Inc. Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography
US6420717B1 (en) * 2000-04-11 2002-07-16 Applied Materials, Inc. Method and apparatus for real-time correction of resist heating in lithography

Also Published As

Publication number Publication date
US6379851B1 (en) 2002-04-30
EP1305817A1 (en) 2003-05-02
JP2004505462A (ja) 2004-02-19
KR20020047197A (ko) 2002-06-21
WO2002011175A1 (en) 2002-02-07

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