AU2001282911A1 - Wideband differential amplifier and summing circuit including such wideband differential amplifier - Google Patents

Wideband differential amplifier and summing circuit including such wideband differential amplifier

Info

Publication number
AU2001282911A1
AU2001282911A1 AU2001282911A AU8291101A AU2001282911A1 AU 2001282911 A1 AU2001282911 A1 AU 2001282911A1 AU 2001282911 A AU2001282911 A AU 2001282911A AU 8291101 A AU8291101 A AU 8291101A AU 2001282911 A1 AU2001282911 A1 AU 2001282911A1
Authority
AU
Australia
Prior art keywords
differential amplifier
wideband differential
circuit including
summing circuit
wideband
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282911A
Inventor
Kevin Scott Buescher
James Harold Lauffenburger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EM Microelectronic Marin SA
Original Assignee
EM Microelectronic Marin SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EM Microelectronic Marin SA filed Critical EM Microelectronic Marin SA
Publication of AU2001282911A1 publication Critical patent/AU2001282911A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3061—Bridge type, i.e. two complementary controlled SEPP output stages
    • H03F3/3062—Bridge type, i.e. two complementary controlled SEPP output stages with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45654—Controlling the active amplifying circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30147—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the current sink of the push driven, i.e. source driven SEPP amplifier being a current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45418—Indexing scheme relating to differential amplifiers the CMCL comprising a resistor addition circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45424—Indexing scheme relating to differential amplifiers the CMCL comprising a comparator circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45508—Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45526—Indexing scheme relating to differential amplifiers the FBC comprising a resistor-capacitor combination and being coupled between the LC and the IC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Optical Recording Or Reproduction (AREA)
AU2001282911A 2000-08-21 2001-08-21 Wideband differential amplifier and summing circuit including such wideband differential amplifier Abandoned AU2001282911A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09642429 2000-08-21
US09/642,429 US6472942B1 (en) 2000-08-21 2000-08-21 Parasitically compensated resistor for integrated circuits
PCT/US2001/022610 WO2002017402A2 (en) 2000-08-21 2001-08-21 Wideband differential amplifier and summing circuit including such wideband differential amplifier

Publications (1)

Publication Number Publication Date
AU2001282911A1 true AU2001282911A1 (en) 2002-03-04

Family

ID=24576512

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282911A Abandoned AU2001282911A1 (en) 2000-08-21 2001-08-21 Wideband differential amplifier and summing circuit including such wideband differential amplifier

Country Status (3)

Country Link
US (1) US6472942B1 (en)
AU (1) AU2001282911A1 (en)
WO (1) WO2002017402A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057453B1 (en) * 2002-07-16 2006-06-06 Inphi Corporation Method and system for reducing parasitic feedback and parasitic resonances in high-gain transimpedance amplifiers
US20050024150A1 (en) * 2003-06-11 2005-02-03 Jeff Gordon Monolithic amplifier with high-value, monolithically formed passive feedback resistor
DE102005035346A1 (en) * 2004-08-19 2006-03-09 Atmel Germany Gmbh Power loss optimized high frequency coupling capacitor and rectifier circuit
US20090229369A1 (en) * 2008-03-17 2009-09-17 Siew-Seong Tan Capacitor Compensation Structure and Method for a Micro-Electro-Mechanical System
US9160313B2 (en) 2013-11-14 2015-10-13 National Instruments Corporation Compensated temperature variable resistor
CN112234142B (en) * 2020-12-14 2021-03-02 南京元络芯科技有限公司 High-power radio-frequency semiconductor integrated resistor and semiconductor chip

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298815A (en) * 1985-10-25 1987-05-08 Hitachi Ltd Semiconductor integrated circuit device
JPH0666606B2 (en) * 1989-12-01 1994-08-24 株式会社東芝 Current amplifier circuit
US5479044A (en) * 1993-06-25 1995-12-26 Nec Corporation Semiconductor circuit device capable of reducing influence of a parasitic capacitor
JPH0786512A (en) * 1993-09-10 1995-03-31 Toshiba Corp Semiconductor device
JPH098230A (en) * 1995-06-14 1997-01-10 Hitachi Ltd Semiconductor integrated circuit device
KR100233557B1 (en) * 1996-06-29 1999-12-01 김영환 Polyresistor of semiconductor device and its fabrication method for analog
US6005280A (en) * 1996-12-13 1999-12-21 Texas Instruments Incorporated Charge cancellation technique for integrated circuit resistors
US5744385A (en) * 1997-03-21 1998-04-28 Plato Labs, Inc. Compensation technique for parasitic capacitance
JP3437917B2 (en) * 1997-09-26 2003-08-18 シャープ株式会社 Light receiving amplifier
US6211769B1 (en) * 1997-12-22 2001-04-03 Texas Instruments Incorporated System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow
US5982232A (en) * 1998-04-01 1999-11-09 International Business Machines Corporation Low noise, bandwidth compensated transimpedance amplifier

Also Published As

Publication number Publication date
WO2002017402A3 (en) 2002-05-10
US6472942B1 (en) 2002-10-29
WO2002017402A2 (en) 2002-02-28

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