AU2001280485A1 - A method of illuminating a photomask using chevron illumination - Google Patents

A method of illuminating a photomask using chevron illumination

Info

Publication number
AU2001280485A1
AU2001280485A1 AU2001280485A AU8048501A AU2001280485A1 AU 2001280485 A1 AU2001280485 A1 AU 2001280485A1 AU 2001280485 A AU2001280485 A AU 2001280485A AU 8048501 A AU8048501 A AU 8048501A AU 2001280485 A1 AU2001280485 A1 AU 2001280485A1
Authority
AU
Australia
Prior art keywords
photomask
illuminating
chevron
illumination
chevron illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280485A
Other languages
English (en)
Inventor
Bruce W. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of AU2001280485A1 publication Critical patent/AU2001280485A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2001280485A 2000-07-07 2001-07-06 A method of illuminating a photomask using chevron illumination Abandoned AU2001280485A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21688100P 2000-07-07 2000-07-07
US60216881 2000-07-07
PCT/US2001/021400 WO2002005029A1 (en) 2000-07-07 2001-07-06 A method of illuminating a photomask using chevron illumination

Publications (1)

Publication Number Publication Date
AU2001280485A1 true AU2001280485A1 (en) 2002-01-21

Family

ID=22808841

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280485A Abandoned AU2001280485A1 (en) 2000-07-07 2001-07-06 A method of illuminating a photomask using chevron illumination

Country Status (7)

Country Link
US (1) US7092073B2 (zh)
EP (1) EP1315996A4 (zh)
JP (1) JP3955815B2 (zh)
KR (1) KR100579601B1 (zh)
CN (1) CN1571943A (zh)
AU (1) AU2001280485A1 (zh)
WO (1) WO2002005029A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1571943A (zh) * 2000-07-07 2005-01-26 Asml荷兰有限公司 采用人字形照射来照射光掩模的方法
US7233887B2 (en) 2002-01-18 2007-06-19 Smith Bruce W Method of photomask correction and its optimization using localized frequency analysis
EP1467254A1 (en) * 2003-04-07 2004-10-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7423732B2 (en) * 2004-11-04 2008-09-09 Asml Holding N.V. Lithographic apparatus and device manufacturing method utilizing placement of a patterning device at a pupil plane
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
KR100653993B1 (ko) * 2004-12-30 2006-12-05 주식회사 하이닉스반도체 다중투과 위상 마스크 및 그 제조 방법
KR101134174B1 (ko) 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
US20090253079A1 (en) * 2008-04-07 2009-10-08 Zhang Fenghong Forming reverse illumination patterns
US8233210B2 (en) * 2008-12-30 2012-07-31 Intel Corporation Illumination aperture for optical lithography

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682598B2 (ja) * 1984-10-11 1994-10-19 日本電信電話株式会社 投影露光装置
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
JPH0536586A (ja) 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP3165711B2 (ja) * 1991-08-02 2001-05-14 キヤノン株式会社 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP2924344B2 (ja) * 1991-08-09 1999-07-26 キヤノン株式会社 投影露光装置
DE69233134T2 (de) * 1991-08-22 2004-04-15 Nikon Corp. Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
US5530518A (en) * 1991-12-25 1996-06-25 Nikon Corporation Projection exposure apparatus
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
JPH07281413A (ja) * 1994-04-05 1995-10-27 Mitsubishi Electric Corp 減衰型位相シフトマスクおよびその製造方法
JPH0887097A (ja) * 1994-09-16 1996-04-02 Konica Corp 画像形成方法
JPH1041225A (ja) 1996-07-24 1998-02-13 Canon Inc 照明装置及びそれを用いた投影露光装置
US5804336A (en) 1996-08-13 1998-09-08 Micron Technology, Inc. Method of forming opaque border on semiconductor photomask
US5817439A (en) * 1997-05-15 1998-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of blind border pattern layout for attenuated phase shifting masks
US6106979A (en) * 1997-12-30 2000-08-22 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6061606A (en) * 1998-08-25 2000-05-09 International Business Machines Corporation Geometric phase analysis for mask alignment
US6080527A (en) * 1999-11-18 2000-06-27 United Microelectronics Corp. Optical proximity correction of L and T shaped patterns on negative photoresist
CN1571943A (zh) * 2000-07-07 2005-01-26 Asml荷兰有限公司 采用人字形照射来照射光掩模的方法

Also Published As

Publication number Publication date
EP1315996A4 (en) 2005-11-23
JP2004503922A (ja) 2004-02-05
WO2002005029A1 (en) 2002-01-17
US20040048167A1 (en) 2004-03-11
CN1571943A (zh) 2005-01-26
KR100579601B1 (ko) 2006-05-12
JP3955815B2 (ja) 2007-08-08
EP1315996A1 (en) 2003-06-04
US7092073B2 (en) 2006-08-15
KR20030075145A (ko) 2003-09-22

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