AU2001269841A1 - Silane containing polishing composition for cmp - Google Patents

Silane containing polishing composition for cmp

Info

Publication number
AU2001269841A1
AU2001269841A1 AU2001269841A AU6984101A AU2001269841A1 AU 2001269841 A1 AU2001269841 A1 AU 2001269841A1 AU 2001269841 A AU2001269841 A AU 2001269841A AU 6984101 A AU6984101 A AU 6984101A AU 2001269841 A1 AU2001269841 A1 AU 2001269841A1
Authority
AU
Australia
Prior art keywords
cmp
polishing composition
silane containing
containing polishing
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001269841A
Inventor
Steven K. Grumbine
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of AU2001269841A1 publication Critical patent/AU2001269841A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing slurry comprising at least one silane in solution and at least one abrasive wherein the silane has the following formula: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Y-Si-(X 1 X 2 R) dimers, trimers and oligomers thereof, wherein X 1 , X 2 and Y are each independently selected from hydroxy, a hydrolyzable substituent and a non-hydrolyzable substituent, and wherein R is a non-hydrolyzable substituent; wherein one substituent selected from X 1 and X 2 is a non-hydrolyzable substituent.
AU2001269841A 2000-07-05 2001-06-14 Silane containing polishing composition for cmp Abandoned AU2001269841A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/609,480 US6646348B1 (en) 2000-07-05 2000-07-05 Silane containing polishing composition for CMP
US09609480 2000-07-05
PCT/US2001/019191 WO2002002707A1 (en) 2000-07-05 2001-06-14 Silane containing polishing composition for cmp

Publications (1)

Publication Number Publication Date
AU2001269841A1 true AU2001269841A1 (en) 2002-01-14

Family

ID=24440985

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001269841A Abandoned AU2001269841A1 (en) 2000-07-05 2001-06-14 Silane containing polishing composition for cmp

Country Status (9)

Country Link
US (2) US6646348B1 (en)
EP (2) EP1852481B1 (en)
JP (1) JP2004502824A (en)
CN (1) CN1249185C (en)
AT (1) ATE371708T1 (en)
AU (1) AU2001269841A1 (en)
DE (1) DE60130213T2 (en)
TW (1) TWI279426B (en)
WO (1) WO2002002707A1 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
JP2004247605A (en) * 2003-02-14 2004-09-02 Toshiba Corp Cmp slurry and manufacturing method of semiconductor device
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
KR100576479B1 (en) * 2003-12-24 2006-05-10 주식회사 하이닉스반도체 CMP Process using the slurry containing abrasive of low concentration
US20060124592A1 (en) * 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
US7803719B2 (en) * 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
EP2197972B1 (en) * 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2010085324A1 (en) * 2009-01-20 2010-07-29 Cabot Corporation Compositons comprising silane modified metal oxides
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
CN104371551B (en) * 2013-08-14 2018-01-12 安集微电子(上海)有限公司 A kind of alkali barrier chemical mechanical polishing liquid
CN103498158B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of polishing slurries
CN103498159B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of polishing slurries
CN103484876B (en) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 A kind of rust cleaning slurry
CN103484867B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of medal polish anti-corrosive pulp
CN103498161B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of medal polish anti-corrosive pulp
CN103498160B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of polishing slurries
CN103526207B (en) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 A kind of rust cleaning slurry
CN104745087B (en) * 2013-12-25 2018-07-24 安集微电子(上海)有限公司 A kind of chemical mechanical polishing liquid and polishing method
CN104745083B (en) * 2013-12-25 2018-09-14 安集微电子(上海)有限公司 A kind of chemical mechanical polishing liquid and polishing method
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
JP6170027B2 (en) * 2014-10-09 2017-07-26 信越化学工業株式会社 CMP abrasive, method for producing the same, and substrate polishing method
CN105802511A (en) * 2014-12-29 2016-07-27 安集微电子(上海)有限公司 Chemical mechanical polishing liquid and application thereof
US10167425B2 (en) * 2016-05-04 2019-01-01 Oci Company Ltd. Etching solution capable of suppressing particle appearance
CN106010297B (en) 2016-06-20 2018-07-31 上海新安纳电子科技有限公司 A kind of preparation method of alumina polishing solution
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
TWI755060B (en) * 2019-11-15 2022-02-11 日商Jsr股份有限公司 Chemical mechanical polishing composition and chemical mechanical polishing method
CN111087930A (en) * 2019-12-23 2020-05-01 长江存储科技有限责任公司 Preparation method of chemical mechanical polishing grinding agent and chemical mechanical polishing method

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563483A (en) 1983-07-06 1986-01-07 Creative Products Resource Ltd. Concrete cleaning composition
EP0371147B1 (en) * 1988-06-03 1993-05-19 Monsanto Japan Limited Abrasive composition for silicon wafer
US5246972A (en) * 1990-04-06 1993-09-21 Dow Corning Corporation Polish containing highly adsorptive polymer
US5532191A (en) * 1993-03-26 1996-07-02 Kawasaki Steel Corporation Method of chemical mechanical polishing planarization of an insulating film using an etching stop
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3303544B2 (en) * 1994-07-27 2002-07-22 ソニー株式会社 Semiconductor device manufacturing method, wiring layer surface polishing slurry, and wiring layer surface polishing slurry manufacturing method
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
JP3438410B2 (en) 1995-05-26 2003-08-18 ソニー株式会社 Slurry for chemical mechanical polishing, method for producing the same, and polishing method using the same
JP3311203B2 (en) 1995-06-13 2002-08-05 株式会社東芝 Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and chemical mechanical polishing method for semiconductor wafer
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
KR970042941A (en) * 1995-12-29 1997-07-26 베일리 웨인 피 Polishing Compounds for Mechanical and Chemical Polishing Processes
US5645736A (en) 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5780358A (en) 1996-04-08 1998-07-14 Chartered Semiconductor Manufacturing Ltd. Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
MY133700A (en) 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US5827781A (en) 1996-07-17 1998-10-27 Micron Technology, Inc. Planarization slurry including a dispersant and method of using same
CA2264722A1 (en) * 1996-09-02 1998-03-12 Sanyo Trading Co., Ltd. Silane-treated clay production method, silane-treated clay and composition containing same
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5968843A (en) 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
JP3927270B2 (en) * 1996-12-27 2007-06-06 富士通株式会社 Abrasive, polishing method and method for manufacturing semiconductor device
JPH10237426A (en) * 1997-02-21 1998-09-08 Nippon Oil Co Ltd Oil composition for lapping
US5954869A (en) * 1997-05-07 1999-09-21 Bioshield Technologies, Inc. Water-stabilized organosilane compounds and methods for using the same
US5934980A (en) 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
US5899745A (en) 1997-07-03 1999-05-04 Motorola, Inc. Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor
US5770103A (en) 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US5891205A (en) 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
JP3560484B2 (en) * 1998-08-05 2004-09-02 昭和電工株式会社 Abrasive composition for polishing LSI devices and polishing method
JP2000053946A (en) * 1998-08-05 2000-02-22 Showa Denko Kk Abrasive material composition
US6372648B1 (en) * 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
JP2003520283A (en) * 1999-07-07 2003-07-02 キャボット マイクロエレクトロニクス コーポレイション CMP composition containing silane-modified abrasive
US6541383B1 (en) * 2000-06-29 2003-04-01 Lsi Logic Corporation Apparatus and method for planarizing the surface of a semiconductor wafer

Also Published As

Publication number Publication date
US6646348B1 (en) 2003-11-11
EP1299490A1 (en) 2003-04-09
EP1852481A1 (en) 2007-11-07
EP1852481B1 (en) 2012-09-05
DE60130213T2 (en) 2007-12-20
JP2004502824A (en) 2004-01-29
US20040214443A1 (en) 2004-10-28
DE60130213D1 (en) 2007-10-11
CN1440449A (en) 2003-09-03
EP1299490B1 (en) 2007-08-29
ATE371708T1 (en) 2007-09-15
CN1249185C (en) 2006-04-05
TWI279426B (en) 2007-04-21
WO2002002707A1 (en) 2002-01-10

Similar Documents

Publication Publication Date Title
AU2001269841A1 (en) Silane containing polishing composition for cmp
AU4589897A (en) Multi-oxidizer slurry for chemical mechanical polishing
AU8595498A (en) A polishing composition including an inhibitor of tungsten etching
AU2325797A (en) Antiloading components for abrasive articles
AU3893297A (en) Abrasive construction for semiconductor wafer modification
AU5853396A (en) Nonwoven abrasive articles
AU4668897A (en) Silicon carbide abrasive wheel
AU6851500A (en) Abrasive grains for grindstones, with improved anchoring capacity
AU2901695A (en) Graphite-loaded silicon carbide
AU590669B2 (en) Substrate for abrasive grit adhesives
AU2001294082A1 (en) Polycrystalline abrasive grit
AU656083B1 (en) Plastic flexible grinding stone
AU1737495A (en) Polishing diamond surface
DE69517064D1 (en) Abrasive vertical grain polishing machine
ZA985885B (en) External abrasive machine.
FI955512A (en) Mixers, especially high-power mixers for grinding pre-ground pulp
AU8937891A (en) Abrasive polishing composition viscous carrier
AU3154595A (en) Grinder pump station
EP0411346A3 (en) Precision grinding machine for lapping, precision grinding or polishing
SG83794A1 (en) Polishing slurry
AU2391300A (en) Silicon containing grinding aides for slag
AU2311795A (en) Abrasive grinding wheels
EP1285726A3 (en) Centerless grinding method for barshape work centerless grinder
AU6305100A (en) Grinding machines
AU6409498A (en) Grinding or like machine tool