CN104745087B - A kind of chemical mechanical polishing liquid and polishing method - Google Patents
A kind of chemical mechanical polishing liquid and polishing method Download PDFInfo
- Publication number
- CN104745087B CN104745087B CN201310727945.9A CN201310727945A CN104745087B CN 104745087 B CN104745087 B CN 104745087B CN 201310727945 A CN201310727945 A CN 201310727945A CN 104745087 B CN104745087 B CN 104745087B
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing liquid
- ammonium
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of chemical mechanical polishing liquids, containing abrasive grains, siliceous organic compound, the electrolyte ion of ionic strength more than or equal to 0.1mol/Kg, nitrogenous compound and its salt, the pH value of chemical mechanical polishing liquid is between 17, and the general formula of siliceous organic compound is：
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid and polishing methods.
Background technology
With the continuous development of semiconductor technology and being continuously increased for large scale integrated circuit interconnection layer, conductive layer and
The planarization of insulating medium layer becomes particularly critical.Twentieth century eighties, the chemically mechanical polishing initiated by IBM Corporation
（CMP）Technology is considered as the most efficient method of current global planarizartion.
Chemically mechanical polishing（CMP）It is combined by chemical action, mechanism and both effects.It is usually by one
A grinding table and a grinding head composition for carrying chip with polishing pad.Wherein grinding head fixes chip, then
The front of chip is pressed on polishing pad.When being chemically-mechanicapolish polished, grinding head linear movement or edge on polishing pad
The direction of motion rotation as grinding table.At the same time, the slurries containing abrasive grains are dripped on polishing pad, and because from
Heart effect is laid on polishing pad.Chip surface realizes global planarizartion under double action mechanically and chemically.
Currently, chemical mechanical polishing liquid（CMP）Abrasive grains generally use silica used, including Ludox
（colloidal silica）And aerosil（fumed silica）.Themselves it is solid, but in aqueous solution
Can be evenly dispersed, it does not settle, it might even be possible to keep 1 to 3 year long-time stability.
Stability of the abrasive grains in water phase（It does not settle）Can be explained with double electrode layer theory-due to each particle
Surface carries identical charge, they are mutually exclusive, not will produce cohesion.According to Stern models, colloidal ion during exercise,
It will produce Zeta electric potential in tangent plane.Zeta electric potential is an important indicator of colloidal stability, because the stabilization of colloid is
It is closely related with interparticle electrostatic repulsion forces.The reduction of Zeta electric potential can be such that electrostatic repulsion forces reduce, and cause interparticle
Van der Waals attractions are dominant, so as to cause the aggregation and sedimentation of colloid.The height of ionic strength is to influence Zeta electric potential
An important factor for.
The stability of colloid is also influenced by other many factors in addition to being influenced by zeta potentials.For example, by temperature
It influences, at relatively high temperatures, particle irregular heat movement aggravation, the probability mutually collided increases, can accelerate to agglomerate；For example, by
PH value influences, and more stable than neutral under strong alkaline and strong acid condition, neutral and alkali is most stable, and the sections pH value 4-7 are most unstable；
For example, being influenced by kinds of surfactants, some surface-actives can play the role of dispersant, improve stability, and have
A little surfactants can reduce nanoparticle surface charge, reduce electrostatic repulsion, accelerated sedimentation.In surfactant, usually
Anionic surfactant is conducive to the stability of nano particle, and cationic surface active agent is easily reduced stability；
For another example the molecular weight with additive is related, too long of polymer long-chain winds nano particle sometimes, increases the viscous of dispersion liquid
Degree accelerates particle aggregation.Therefore, the stability of Ludox is influenced by many factors.
United States Patent (USP) 60142706 and United States Patent (USP) 09609882 disclose the polishing fluid containing silane coupling agent and polishing
Method.Wherein silane coupling agent plays the role of changing the polishing velocity of multiple material and improves surface roughness.This two
Patent is not found：In high ionic strength（>0.1mol/Kg）When, silane coupling agent can play confrontation high ionic strength
Effect, stable nanoparticles.Because usually when containing very high ionic strength（Such as containing more than>0.2mol/Kg potassium from
Son）, the electric double layer of silica sol granule can substantially be compressed, and electrostatic repulsion forces reduce, and quickly form gel, precipitation.And the U.S.
Patent 60142706 and United States Patent (USP) 09609882, which are not found silane coupling agent, can improve the polishing velocity of silica,
More do not find：There is significant synergistic effect between silane coupling agent and other complexing agent nitrogenous compounds, to silica
There are 1+1 for polishing velocity>2 effect.
Invention content
The present invention discloses a kind of chemical mechanical polishing liquid, using siliceous organic compound, in polyelectrolyte ionic strength
When, abrasive grains can be stablized, meanwhile, there is significant association between the silicon-containing compound and other additives such as nitrogenous compound
Same-action greatly improves the polishing velocity of silica.
The present invention relates to a kind of chemical mechanical polishing liquids, and containing abrasive grains, siliceous organic compound is greater than or equal to
The electrolyte ion of the ionic strength of 0.1mol/Kg, nitrogenous compound and its salt.
The siliceous organic compound can be indicated with the following general formula：
General formula：
In above formula, R is nonhydrolyzable substituent group, and D is the organo-functional group being connected on R, these reactive groups can be with
Organic substance is reacted and is combined.A, B are same or different hydrolyzable substituent group or hydroxyl, and C can be hydrolyzable groups
Or hydroxyl, can also be the alkyl substituent of non-hydrolysable.Further saying, R is typically alkyl, such as 1-50 carbon atom
Alkyl is more preferably the alkyl of 1-20 carbon atom, is the alkyl of 2-10 carbon atom most preferably.And those skilled in the art
Continue to take it is understood that the carbon atom in R substituent can also continue to other atoms by oxygen, nitrogen, sulphur, phosphine, halogen, silicon etc.
Generation.D can be amino, urea groups, sulfydryl, epoxy group, acrylic, vinyl, acryloxy etc..A, B and C are typically chlorine
Base, methoxyl group, ethyoxyl, methoxy ethoxy, acetoxyl group, hydroxyl etc. generate silanol when these groups hydrolyze（Si
(OH)3）, and combined with inorganic substances, form siloxanes.
Representative siliceous organic compound is silane coupling agent, such as with lower structure：
3-aminopropyltriethoxysilane（Trade name KH-550）
γ-(2,3- glycidoxies) propyl trimethoxy silicane（Trade name KH-560）
γ-(methacryloxypropyl) propyl trimethoxy silicane（Trade name KH-570）
Gamma-mercaptopropyltriethoxysilane（Trade name KH-580）
γ-mercaptopropyl trimethoxysilane（Trade name KH-590）
N- (β-aminoethyl)-γ-aminopropyltriethoxy dimethoxysilanes（Trade name KH-602）
γ-aminoethyl amino propyl trimethoxy silane（Trade name KH-792）
γ-aminopropyltriethoxy diethoxy silane（Trade name KH-902）
γ-divinyl triammonium base hydroxypropyl methyl dimethoxysilane（Trade name KH-103）
The siliceous organic compound can be added to by number of ways in polishing fluid, and 1：Abrasive grains are preparing polishing fluid
It is first bonded before with silicon-containing compound（The modification of the surfaces particle, the surface treatment being commonly called as）, then grind surface is modified
Abrasive particle is added in polishing fluid.2：The siliceous organic compound is when producing polishing fluid and abrasive grains and other components
It mixes simultaneously.3：The siliceous organic compound can first complete hydrolysis or partial hydrolysis, generate Si-OH groups, then again plus
Enter in polishing fluid, Si-OH groups and the surfaces particle Si-OH bondings completely or part bonding in polishing fluid.Therefore this hair
There may be a variety of shapes such as free, bonding, partial hydrolysis, complete hydrolysis in polishing for the siliceous organic compound of bright use
State.
Nitrogenous compound and its salt used in the present invention are preferably two allyl ammonium chloride of poly dimethyl, 2- amino-2-methyls-
1- propyl alcohol, glycidyltrimetiiylammonium ammonium chloride, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium lauryl sulfate, second
One kind in sour guanidine, guanidine carbonate, phosphoguanidine, urea, ammonium citrate, ammonium dihydrogen phosphate, ammonium sulfate, ammonium oxalate, ammonium borate, ammonium acetate
Or it is a variety of；The content of the nitrogenous compound is preferably mass percent 0.01~1.5%, more preferably 0.05~0.5%.
The polishing composition can work under acid ph value or alkaline ph values.Preferably, the pH value of polishing composition
In 1-7.Within this range, pH value is preferably greater than or equal to 2, and is less than or equal to 6, and most preferably pH value is 3-5.
Affiliated polishing composition also may include inorganic or organic pH adjusting agent, and the pH value of polishing composition is down to
Acid ph value, or pH value is increased into alkaline ph values.It includes such as nitric acid, sulfuric acid, hydrochloric acid, phosphorus that suitable inorganic pH value, which reduces agent,
Acid or the combination for reducing agent comprising at least one above-mentioned inorganic pH value.Suitable pH value height increasing agent includes one kind below：Metal
Hydroxide, ammonium hydroxide or nitrogenous organic base or above-mentioned pH value increase the combination of agent.
In the polishing fluid, a concentration of mass percent 0.001%~1% of siliceous organic compound, preferably 0.01%~
0.5%。
In the polishing fluid, abrasive grains can also be contained, it is preferable that be a concentration of quality hundred of Silica abrasive particle
Point ratio 1%~50%, preferably 2%~10%.Grain size is 20~200nm, preferably 20~120nm.
In the polishing fluid, the electrolyte ion of the ionic strength more than or equal to 0.1mol/Kg is metal ion and Fei Jin
Belong to ion.The concentration of the electrolyte ion of ionic strength more than or equal to 0.1mol/Kg may preferably be 0.1mol/Kg-
1.0mol/Kg.For example, can be potassium ion, iron ion is one or more in ammonium ion and potassium ion.It is preferred that
Ground, electrolyte ion are potassium ions.
The positive effect of the present invention is that：
1：The present invention is steady by the dispersion for realizing the chemical mechanical polishing liquid under high ionic strength in silane coupling agent
Qualitative question.
2：By the synergistic effect of silane coupling agent and nitrogenous compound, the polishing of silica further greatly improved
Speed；
3：Highly concentrated chemical mechanical polishing liquid can be prepared by this method.
4：The costs such as product raw material, packaging, transport, storage, management, manpower can be greatly reduced by highly concentrated.
Specific implementation mode
The advantages of the present invention is further explained below by specific embodiment, but protection scope of the present invention is not only limited to
In following embodiments.
Polishing fluid is prepared according to the ingredient and its ratio of each embodiment in table 1 and comparative example, is uniformly mixed, uses water
Mass percent is supplied to 100%.With KOH, HNO3Or pH adjusting agent is adjusted to required pH value.Wherein polishing condition is：It throws
Ray machine platform is Mirra boards, Fujibo polishing pads, 200mm Wafer, lower pressure 3psi, 150ml/ points of polishing fluid rate of addition
Clock.
1 specific embodiment of the invention of table and comparative example
Comparative example 1 shows：Under very high ionic strength, the removal rate of silica only has 350A/min, and throws
Light liquid is unstable, rapid delaminating deposition.Comparative example 3 and comparative example 1 contrast and show：Under very high ionic strength, silicon is added
The removal rate of alkane coupling agent, silica increases 120A/min, also, polishing fluid is very stable, abrasive grains average grain diameter
（particle mean size）Do not increase.Comparative example 2 shows：Tetramethylammonium hydroxide is added, the throwing of silica can be made
Ray velocity increases 600A/min, but polishing fluid is unstable, rapid delaminating deposition.Embodiment 1 and comparative example 2 contrast and show：
In the presence of tetramethylammonium hydroxide, silane coupling agent is added, the removal rate ratio of silica is not added with tetramethylammonium hydroxide
And it is not added with silane coupling agent, 1217A/min is increased, this increments is more than silane coupling agent（120A/min）And tetramethyl
The sum of both ammonium hydroxide (600A/min) contribution, shows：Silane coupling agent and tetramethylammonium hydroxide and other nitrogens
There is synergistic effect between conjunction object, the polishing velocity of silica can be greatly improved.Comparative example 1~2 is all not plus silane coupled
Agent, polishing fluid are unstable.Embodiment 1~16 has silane coupling agent, and polishing fluid is more stable, and the removal speed of silica
Degree is obviously improved.
Embodiment 1~16 all shows that silane coupling agent has the function of " anti-high ionic strength ", and polishing fluid is highly stable.
It should be understood that % of the present invention refers to mass percentage.
Specific embodiments of the present invention are described in detail above, but it is intended only as example, the present invention is simultaneously unlimited
It is formed on particular embodiments described above.To those skilled in the art, it is any to the equivalent modifications that carry out of the present invention and
It substitutes also all among scope of the invention.Therefore, without departing from the spirit and scope of the invention made by impartial conversion and
Modification, all should be contained within the scope of the invention.
Claims (11)
1. a kind of chemical mechanical polishing liquid, by abrasive grains, siliceous organic compound, more than or equal to 0.1mol/Kg from
The electrolyte ion of sub- intensity, nitrogenous compound and its salt composition, which is characterized in that
The pH value of the chemical mechanical polishing liquid is between 1-7；
The nitrogenous compound and its salt are two allyl ammonium chloride of poly dimethyl, 2-amino-2-methyl-1-propanol, glycidol
Base trimethyl ammonium chloride, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium lauryl sulfate, guanidine acetate, guanidine carbonate, phosphorus
It is one or more in sour guanidine, urea, ammonium citrate, ammonium dihydrogen phosphate, ammonium sulfate, ammonium oxalate, ammonium borate, ammonium acetate；
The content of the nitrogenous compound is mass percent 0.05~0.5%；
The siliceous organic compound is 3-aminopropyltriethoxysilane, γ-(2,3- glycidoxy) propyl front three
Oxysilane, γ-(methacryloxypropyl) propyl trimethoxy silicane, gamma-mercaptopropyltriethoxysilane, γ-mercapto propyl three
Methoxy silane, N- (β-aminoethyl)-γ-aminopropyltriethoxy dimethoxysilanes, γ-aminoethylaminopropyl trimethoxy silicon
Alkane, γ-divinyl triammonium base hydroxypropyl methyl dimethoxysilane, one kind or more in γ-aminopropyltriethoxy diethoxy silane
Kind；
A concentration of mass percent 0.01%~0.5% of the siliceous organic compound.
2. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the electrolyte ion is metal ion or non-
Metal ion.
3. chemical mechanical polishing liquid as claimed in claim 2, which is characterized in that the electrolyte ion is potassium ion, iron from
It is one or more in son, ammonium ion and potassium ion.
4. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the abrasive grains are Silica abrasive
Grain.
5. chemical mechanical polishing liquid as described in claim 1, which is characterized in that a concentration of quality percentage of the abrasive grains
Than 1%~50%.
6. chemical mechanical polishing liquid as claimed in claim 5, which is characterized in that a concentration of quality percentage of the abrasive grains
Than 2%~10%.
7. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the grain size of the abrasive grains be 20~
200nm。
8. chemical mechanical polishing liquid as claimed in claim 7, which is characterized in that the grain size of the abrasive grains be 20~
120nm。
9. chemical mechanical polishing liquid as described in claim 1, which is characterized in that described is greater than or equal to 0.1mol/Kg's
A concentration of 0.1mol/Kg-1.0mol/Kg of the electrolyte ion of ionic strength.
10. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the pH value of the chemical mechanical polishing liquid is
2-6。
11. chemical mechanical polishing liquid as claimed in claim 10, which is characterized in that the pH value of the chemical mechanical polishing liquid is
3-5。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310727945.9A CN104745087B (en) | 2013-12-25 | 2013-12-25 | A kind of chemical mechanical polishing liquid and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310727945.9A CN104745087B (en) | 2013-12-25 | 2013-12-25 | A kind of chemical mechanical polishing liquid and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104745087A CN104745087A (en) | 2015-07-01 |
| CN104745087B true CN104745087B (en) | 2018-07-24 |
Family
ID=53585368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310727945.9A Active CN104745087B (en) | 2013-12-25 | 2013-12-25 | A kind of chemical mechanical polishing liquid and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104745087B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110922897B (en) * | 2019-11-18 | 2024-03-08 | 宁波日晟新材料有限公司 | Low-haze nondestructive polishing solution for silicon compound and preparation method thereof |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367809A (en) * | 1999-07-07 | 2002-09-04 | 卡伯特微电子公司 | CMP composition containing silane modified abrasive particles |
| CN1436225A (en) * | 2000-07-05 | 2003-08-13 | 卡伯特微电子公司 | Polishing composition for metal CMP |
| CN1440449A (en) * | 2000-07-05 | 2003-09-03 | 卡伯特微电子公司 | Silane containing polishing composition for CMP |
| CN1486505A (en) * | 2001-01-16 | 2004-03-31 | Ammonium oxalate-containing polishing system and method | |
| CN1809620A (en) * | 2003-04-21 | 2006-07-26 | 卡伯特微电子公司 | Coated metal oxide particles for CMP |
| KR100725803B1 (en) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same |
| CN101238192A (en) * | 2005-08-04 | 2008-08-06 | 旭硝子株式会社 | Polishing composition and polishing method |
| CN101684392A (en) * | 2008-09-26 | 2010-03-31 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN102093820A (en) * | 2011-01-06 | 2011-06-15 | 清华大学 | Silicon wafer chemical and mechanical polishing composition with high stability |
| CN102210013A (en) * | 2008-11-10 | 2011-10-05 | 旭硝子株式会社 | Abrasive composition and method for manufacturing semiconductor integrated circuit device |
| CN102516876A (en) * | 2011-11-22 | 2012-06-27 | 清华大学 | Polishing composition for silicon wafer polishing and preparation method thereof |
| CN102585706A (en) * | 2012-01-09 | 2012-07-18 | 清华大学 | Acidic chemical and mechanical polishing composition |
| CN102618174A (en) * | 2012-02-28 | 2012-08-01 | 南通海迅天恒纳米科技有限公司 | Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability |
| TW201311840A (en) * | 2011-09-13 | 2013-03-16 | Anji Microelectronics Co Ltd | Chemical mechanical polishing liquid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
-
2013
- 2013-12-25 CN CN201310727945.9A patent/CN104745087B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367809A (en) * | 1999-07-07 | 2002-09-04 | 卡伯特微电子公司 | CMP composition containing silane modified abrasive particles |
| CN1436225A (en) * | 2000-07-05 | 2003-08-13 | 卡伯特微电子公司 | Polishing composition for metal CMP |
| CN1440449A (en) * | 2000-07-05 | 2003-09-03 | 卡伯特微电子公司 | Silane containing polishing composition for CMP |
| CN1486505A (en) * | 2001-01-16 | 2004-03-31 | Ammonium oxalate-containing polishing system and method | |
| CN1809620A (en) * | 2003-04-21 | 2006-07-26 | 卡伯特微电子公司 | Coated metal oxide particles for CMP |
| CN101238192A (en) * | 2005-08-04 | 2008-08-06 | 旭硝子株式会社 | Polishing composition and polishing method |
| KR100725803B1 (en) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same |
| CN101684392A (en) * | 2008-09-26 | 2010-03-31 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN102210013A (en) * | 2008-11-10 | 2011-10-05 | 旭硝子株式会社 | Abrasive composition and method for manufacturing semiconductor integrated circuit device |
| CN102093820A (en) * | 2011-01-06 | 2011-06-15 | 清华大学 | Silicon wafer chemical and mechanical polishing composition with high stability |
| TW201311840A (en) * | 2011-09-13 | 2013-03-16 | Anji Microelectronics Co Ltd | Chemical mechanical polishing liquid |
| CN102516876A (en) * | 2011-11-22 | 2012-06-27 | 清华大学 | Polishing composition for silicon wafer polishing and preparation method thereof |
| CN102585706A (en) * | 2012-01-09 | 2012-07-18 | 清华大学 | Acidic chemical and mechanical polishing composition |
| CN102618174A (en) * | 2012-02-28 | 2012-08-01 | 南通海迅天恒纳米科技有限公司 | Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104745087A (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5084670B2 (en) | Silica sol and method for producing the same | |
| KR20140039260A (en) | Polishing composition | |
| CN107325789B (en) | A kind of preparation method of the sial abrasive compound for Sapphire Substrate polishing | |
| CN108250974A (en) | A kind of chemical mechanical polishing liquid | |
| JP2016008157A (en) | Method for producing colloidal silica containing core-shell type silica particles | |
| JP6569191B2 (en) | Abrasive, abrasive set, and substrate polishing method | |
| CN104371553B (en) | A kind of chemical mechanical polishing liquid and application | |
| CN104342704A (en) | Oxidizing agent-free alkaline aluminum alloy polishing liquid and preparation method thereof | |
| JP2782692B2 (en) | Polishing composition for silicone wafer | |
| CN104371550B (en) | A kind of chemical mechanical polishing liquid for being used to polish silicon materials | |
| JP6207345B2 (en) | Method for producing silica particles | |
| CN107686703A (en) | A kind of chemical mechanical polishing liquid | |
| CN104745087B (en) | A kind of chemical mechanical polishing liquid and polishing method | |
| CN104371549A (en) | Chemical mechanical polishing liquid for polishing low dielectric material | |
| CN102816530B (en) | A kind of chemical mechanical polishing liquid | |
| WO2016107409A1 (en) | Chemical mechanical polishing liquid and application thereof | |
| JP2020083736A (en) | Hollow silica particle and method for producing the same | |
| CN104371551B (en) | A kind of alkali barrier chemical mechanical polishing liquid | |
| JP2018080331A (en) | Silica-based polishing particle and abrasive | |
| CN104745082A (en) | Chemical mechanical polishing liquid and polishing method | |
| CN107075345B (en) | Sapphire plate grinding Liquid composition | |
| CN104745083B (en) | A kind of chemical mechanical polishing liquid and polishing method | |
| CN105802511A (en) | Chemical mechanical polishing liquid and application thereof | |
| JP6195524B2 (en) | Hydrophobic silica powder and method for producing the same | |
| CN104371552B (en) | Application of the silicon-containing organic compound in extension chemical mechanical polishing liquid in abrasive grains stability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |