AU2001268612A1 - Gas collector for epitaxial reactor - Google Patents

Gas collector for epitaxial reactor

Info

Publication number
AU2001268612A1
AU2001268612A1 AU2001268612A AU6861201A AU2001268612A1 AU 2001268612 A1 AU2001268612 A1 AU 2001268612A1 AU 2001268612 A AU2001268612 A AU 2001268612A AU 6861201 A AU6861201 A AU 6861201A AU 2001268612 A1 AU2001268612 A1 AU 2001268612A1
Authority
AU
Australia
Prior art keywords
gas collector
epitaxial reactor
epitaxial
reactor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001268612A
Inventor
Khang V. Nguyen
Roger S. Sillmon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Manufacturing Enterprises LLC
Original Assignee
ITT Manufacturing Enterprises LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Manufacturing Enterprises LLC filed Critical ITT Manufacturing Enterprises LLC
Publication of AU2001268612A1 publication Critical patent/AU2001268612A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
AU2001268612A 2000-08-09 2001-06-21 Gas collector for epitaxial reactor Abandoned AU2001268612A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09635268 2000-08-09
US09/635,268 US6325855B1 (en) 2000-08-09 2000-08-09 Gas collector for epitaxial reactors
PCT/US2001/019722 WO2002012588A1 (en) 2000-08-09 2001-06-21 Gas collector for epitaxial reactor

Publications (1)

Publication Number Publication Date
AU2001268612A1 true AU2001268612A1 (en) 2002-02-18

Family

ID=24547109

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001268612A Abandoned AU2001268612A1 (en) 2000-08-09 2001-06-21 Gas collector for epitaxial reactor

Country Status (6)

Country Link
US (3) US6325855B1 (en)
JP (1) JP5124716B2 (en)
AU (1) AU2001268612A1 (en)
DE (1) DE10194628B4 (en)
TW (1) TWI265977B (en)
WO (1) WO2002012588A1 (en)

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TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
ATE534142T1 (en) 2002-03-12 2011-12-15 Hamamatsu Photonics Kk METHOD FOR SEPARATING A SUBSTRATE
EP2216128B1 (en) 2002-03-12 2016-01-27 Hamamatsu Photonics K.K. Method of cutting object to be processed
TWI520269B (en) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US20050023260A1 (en) * 2003-01-10 2005-02-03 Shinya Takyu Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
FR2852250B1 (en) 2003-03-11 2009-07-24 Jean Luc Jouvin PROTECTIVE SHEATH FOR CANNULA, AN INJECTION KIT COMPRISING SUCH ANKLE AND NEEDLE EQUIPPED WITH SUCH ANKLE
US8685838B2 (en) 2003-03-12 2014-04-01 Hamamatsu Photonics K.K. Laser beam machining method
JP4563097B2 (en) * 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
US7402678B2 (en) * 2004-12-17 2008-07-22 3M Innovative Properties Company Multifunctional amine capture agents
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
DE102006042280A1 (en) 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Transparent material scribing comprises using single scan of focused beam of ultrashort laser pulses to simultaneously create surface groove in material and modified region(s) within bulk of material
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101004822B1 (en) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 Apparatus for chemical vapor deposition
KR100982987B1 (en) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 Apparatus for chemical vapor deposition
KR200475462Y1 (en) * 2009-03-27 2014-12-03 램 리써치 코포레이션 Replaceable upper chamber section of plasma processing apparatus
WO2011031321A2 (en) * 2009-09-10 2011-03-17 Lam Research Corporation Replaceable upper chamber parts of plasma processing apparatus
US8163089B2 (en) 2009-12-16 2012-04-24 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate
US9234278B2 (en) * 2012-01-20 2016-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. CVD conformal vacuum/pumping guiding design
KR20130115849A (en) * 2012-04-13 2013-10-22 삼성전자주식회사 Apparatus of fabricating semiconductor devices
KR102156795B1 (en) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Deposition apparatus
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
JP5941491B2 (en) * 2014-03-26 2016-06-29 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and program
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
CN114551206A (en) * 2015-12-04 2022-05-27 应用材料公司 Advanced coating method and material for preventing HDP-CVD chamber arcing
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
WO2020046567A1 (en) 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
CN112080733A (en) * 2019-06-14 2020-12-15 东泰高科装备科技有限公司 Tail gas discharging device and vacuum coating system

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Also Published As

Publication number Publication date
JP5124716B2 (en) 2013-01-23
DE10194628T1 (en) 2003-07-03
US6478877B1 (en) 2002-11-12
US6676758B2 (en) 2004-01-13
WO2002012588A1 (en) 2002-02-14
DE10194628B4 (en) 2006-06-29
TWI265977B (en) 2006-11-11
US20020017244A1 (en) 2002-02-14
JP2004506316A (en) 2004-02-26
US6325855B1 (en) 2001-12-04

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