AU2001264411A1 - A method for manufacturing a susceptor, a susceptor thus obtained and its application - Google Patents

A method for manufacturing a susceptor, a susceptor thus obtained and its application

Info

Publication number
AU2001264411A1
AU2001264411A1 AU2001264411A AU6441101A AU2001264411A1 AU 2001264411 A1 AU2001264411 A1 AU 2001264411A1 AU 2001264411 A AU2001264411 A AU 2001264411A AU 6441101 A AU6441101 A AU 6441101A AU 2001264411 A1 AU2001264411 A1 AU 2001264411A1
Authority
AU
Australia
Prior art keywords
susceptor
manufacturing
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001264411A
Other languages
English (en)
Inventor
Marcel Maria Michorius
Johannes Gerardus Maria Mulder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xycarb Ceramics BV
Original Assignee
Xycarb Ceramics BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xycarb Ceramics BV filed Critical Xycarb Ceramics BV
Publication of AU2001264411A1 publication Critical patent/AU2001264411A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2001264411A 2000-06-28 2001-06-01 A method for manufacturing a susceptor, a susceptor thus obtained and its application Abandoned AU2001264411A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1015550A NL1015550C2 (nl) 2000-06-28 2000-06-28 Werkwijze voor het vervaardigen van een uit een kern opgebouwde susceptor, aldus verkregen susceptor en een werkwijze voor het aanbrengen van actieve lagen op een halfgeleidersubstraat onder toepassing van een dergelijke susceptor.
NL1015550 2000-06-28
PCT/NL2001/000432 WO2002000968A1 (en) 2000-06-28 2001-05-31 A method for manufacturing a susceptor, a susceptor thus obtained and its application

Publications (1)

Publication Number Publication Date
AU2001264411A1 true AU2001264411A1 (en) 2002-01-08

Family

ID=19771614

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001264411A Abandoned AU2001264411A1 (en) 2000-06-28 2001-06-01 A method for manufacturing a susceptor, a susceptor thus obtained and its application

Country Status (3)

Country Link
AU (1) AU2001264411A1 (nl)
NL (1) NL1015550C2 (nl)
WO (1) WO2002000968A1 (nl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPS62123094A (ja) * 1985-11-22 1987-06-04 Denki Kagaku Kogyo Kk ３―５属化合物半導体気相成長用サセプタ
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ
EP0595054A1 (en) * 1992-10-30 1994-05-04 Applied Materials, Inc. Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US5837058A (en) * 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
JPH11157989A (ja) * 1997-11-25 1999-06-15 Toyo Tanso Kk 気相成長用サセプター及びその製造方法

Also Published As

Publication number Publication date
WO2002000968A1 (en) 2002-01-03
NL1015550C2 (nl) 2002-01-02

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