AU2001249730A1 - Concurrent multi-band low noise amplifier architecture - Google Patents

Concurrent multi-band low noise amplifier architecture

Info

Publication number
AU2001249730A1
AU2001249730A1 AU2001249730A AU4973001A AU2001249730A1 AU 2001249730 A1 AU2001249730 A1 AU 2001249730A1 AU 2001249730 A AU2001249730 A AU 2001249730A AU 4973001 A AU4973001 A AU 4973001A AU 2001249730 A1 AU2001249730 A1 AU 2001249730A1
Authority
AU
Australia
Prior art keywords
low noise
noise amplifier
band low
amplifier architecture
concurrent multi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249730A
Inventor
Seyed-Ali Hajimiri
Hossein Hashemi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of AU2001249730A1 publication Critical patent/AU2001249730A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
AU2001249730A 2000-03-28 2001-03-28 Concurrent multi-band low noise amplifier architecture Abandoned AU2001249730A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19251500P 2000-03-28 2000-03-28
US60192515 2000-03-28
PCT/US2001/010487 WO2001073942A2 (en) 2000-03-28 2001-03-28 Concurrent multi-band low noise amplifier architecture

Publications (1)

Publication Number Publication Date
AU2001249730A1 true AU2001249730A1 (en) 2001-10-08

Family

ID=22709984

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249730A Abandoned AU2001249730A1 (en) 2000-03-28 2001-03-28 Concurrent multi-band low noise amplifier architecture

Country Status (5)

Country Link
US (2) US6674337B2 (en)
EP (1) EP1275198A2 (en)
JP (1) JP2003529265A (en)
AU (1) AU2001249730A1 (en)
WO (1) WO2001073942A2 (en)

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US9178669B2 (en) 2011-05-17 2015-11-03 Qualcomm Incorporated Non-adjacent carrier aggregation architecture
US9252827B2 (en) 2011-06-27 2016-02-02 Qualcomm Incorporated Signal splitting carrier aggregation receiver architecture
US9154179B2 (en) 2011-06-29 2015-10-06 Qualcomm Incorporated Receiver with bypass mode for improved sensitivity
US8774334B2 (en) 2011-11-09 2014-07-08 Qualcomm Incorporated Dynamic receiver switching
US9362958B2 (en) 2012-03-02 2016-06-07 Qualcomm Incorporated Single chip signal splitting carrier aggregation receiver architecture
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US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9867194B2 (en) 2012-06-12 2018-01-09 Qualcomm Incorporated Dynamic UE scheduling with shared antenna and carrier aggregation
US9300420B2 (en) 2012-09-11 2016-03-29 Qualcomm Incorporated Carrier aggregation receiver architecture
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting
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US8995591B2 (en) 2013-03-14 2015-03-31 Qualcomm, Incorporated Reusing a single-chip carrier aggregation receiver to support non-cellular diversity
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KR101983162B1 (en) 2013-12-12 2019-05-28 삼성전기주식회사 Signal amplifier using inverted topology
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KR101607030B1 (en) * 2014-12-26 2016-04-11 삼성전기주식회사 Concurrent dual-band signal amplifier
US9473101B2 (en) 2015-02-09 2016-10-18 Qualcomm Incorporated Amplifier with integral notch filter
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WO2020116708A1 (en) * 2018-12-06 2020-06-11 엘지전자 주식회사 Electronic device operating in multiple bands
CN109921750B (en) * 2019-01-24 2023-05-26 杭州电子科技大学 Broadband power amplifier based on active load modulation and design method thereof
CN110098812B (en) * 2019-04-30 2023-04-28 杭州中科微电子有限公司 Dual-band low-noise amplifier applied to GNSS
CN110868165B (en) * 2019-11-29 2023-07-11 山东大学 Multi-adaptability switchable on-chip low-noise amplifier and working method thereof
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Also Published As

Publication number Publication date
US6674337B2 (en) 2004-01-06
US20030206076A1 (en) 2003-11-06
US20020030545A1 (en) 2002-03-14
WO2001073942A3 (en) 2002-04-25
WO2001073942A2 (en) 2001-10-04
EP1275198A2 (en) 2003-01-15
JP2003529265A (en) 2003-09-30

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