AU2001249077A1 - Dense-plasma etching of inp-based materials using chlorine and nitrogen - Google Patents
Dense-plasma etching of inp-based materials using chlorine and nitrogenInfo
- Publication number
- AU2001249077A1 AU2001249077A1 AU2001249077A AU4907701A AU2001249077A1 AU 2001249077 A1 AU2001249077 A1 AU 2001249077A1 AU 2001249077 A AU2001249077 A AU 2001249077A AU 4907701 A AU4907701 A AU 4907701A AU 2001249077 A1 AU2001249077 A1 AU 2001249077A1
- Authority
- AU
- Australia
- Prior art keywords
- inp
- dense
- chlorine
- nitrogen
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 title 1
- 239000000460 chlorine Substances 0.000 title 1
- 229910052801 chlorine Inorganic materials 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 229910052757 nitrogen Inorganic materials 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18530800P | 2000-02-28 | 2000-02-28 | |
US60185308 | 2000-02-28 | ||
PCT/US2001/006472 WO2001065593A1 (fr) | 2000-02-28 | 2001-02-28 | Gravure au plasma dense de matieres a base de phosphure d'indium a l'aide de chlore et d'azote |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001249077A1 true AU2001249077A1 (en) | 2001-09-12 |
Family
ID=22680445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001249077A Abandoned AU2001249077A1 (en) | 2000-02-28 | 2001-02-28 | Dense-plasma etching of inp-based materials using chlorine and nitrogen |
Country Status (5)
Country | Link |
---|---|
US (1) | US20010025826A1 (fr) |
AU (1) | AU2001249077A1 (fr) |
CA (1) | CA2400765A1 (fr) |
TW (1) | TW506006B (fr) |
WO (1) | WO2001065593A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7103245B2 (en) | 2000-07-10 | 2006-09-05 | Massachusetts Institute Of Technology | High density integrated optical chip |
US6665033B2 (en) * | 2000-11-30 | 2003-12-16 | International Business Machines Corporation | Method for forming alignment layer by ion beam surface modification |
US6934427B2 (en) | 2002-03-12 | 2005-08-23 | Enablence Holdings Llc | High density integrated optical chip with low index difference waveguide functions |
US20040053506A1 (en) * | 2002-07-19 | 2004-03-18 | Yao-Sheng Lee | High temperature anisotropic etching of multi-layer structures |
US7262137B2 (en) * | 2004-02-18 | 2007-08-28 | Northrop Grumman Corporation | Dry etching process for compound semiconductors |
KR100759808B1 (ko) * | 2005-12-08 | 2007-09-20 | 한국전자통신연구원 | Iii-v 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법 |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
US9934981B2 (en) | 2013-09-26 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing substrates using directional reactive ion etching |
US10003014B2 (en) * | 2014-06-20 | 2018-06-19 | International Business Machines Corporation | Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching |
US9484216B1 (en) * | 2015-06-02 | 2016-11-01 | Sandia Corporation | Methods for dry etching semiconductor devices |
US10008384B2 (en) | 2015-06-25 | 2018-06-26 | Varian Semiconductor Equipment Associates, Inc. | Techniques to engineer nanoscale patterned features using ions |
GB201811873D0 (en) * | 2018-07-20 | 2018-09-05 | Oxford Instruments Nanotechnology Tools Ltd | Semiconductor etching methods |
GB202209654D0 (en) * | 2022-06-30 | 2022-08-17 | Spts Technologies Ltd | Post-processing of indium-containing compound semiconductors |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766175A (ja) * | 1993-08-31 | 1995-03-10 | Mitsubishi Electric Corp | In系化合物半導体のエッチング方法 |
US5527425A (en) * | 1995-07-21 | 1996-06-18 | At&T Corp. | Method of making in-containing III/V semiconductor devices |
-
2001
- 2001-02-28 WO PCT/US2001/006472 patent/WO2001065593A1/fr active Application Filing
- 2001-02-28 CA CA002400765A patent/CA2400765A1/fr not_active Abandoned
- 2001-02-28 AU AU2001249077A patent/AU2001249077A1/en not_active Abandoned
- 2001-02-28 US US09/795,715 patent/US20010025826A1/en not_active Abandoned
- 2001-05-31 TW TW090104770A patent/TW506006B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW506006B (en) | 2002-10-11 |
US20010025826A1 (en) | 2001-10-04 |
CA2400765A1 (fr) | 2001-09-07 |
WO2001065593A1 (fr) | 2001-09-07 |
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