AU2001246364A1 - Method for producing crystals and/or crystal materials containing fluorine - Google Patents

Method for producing crystals and/or crystal materials containing fluorine

Info

Publication number
AU2001246364A1
AU2001246364A1 AU2001246364A AU4636401A AU2001246364A1 AU 2001246364 A1 AU2001246364 A1 AU 2001246364A1 AU 2001246364 A AU2001246364 A AU 2001246364A AU 4636401 A AU4636401 A AU 4636401A AU 2001246364 A1 AU2001246364 A1 AU 2001246364A1
Authority
AU
Australia
Prior art keywords
crystal materials
materials containing
containing fluorine
producing crystals
getter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001246364A
Inventor
Jorg Donecker
Steffen Ganschow
Detlef Klimm
Bernd Muller
Peter Reiche
Burkhard Speit
Reinhard Uecker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsverbund Berlin FVB eV
Original Assignee
INST KRISTALLZUCHTUNG IM FORSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST KRISTALLZUCHTUNG IM FORSC filed Critical INST KRISTALLZUCHTUNG IM FORSC
Publication of AU2001246364A1 publication Critical patent/AU2001246364A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

A method for producing crystals and/or crystal materials is described whereby the undesirable impurities are removed from the crystal and/or the material with the aid of a purification agent or getter. Elemental fluorine and/or a reactive fluorine-containing substance is used as the purification agent or getter. Preferred getters are XeF2 and/or carbon fluoride. Crystals obtained in this manner are suitable for use as optical components.
AU2001246364A 2000-03-03 2001-03-02 Method for producing crystals and/or crystal materials containing fluorine Abandoned AU2001246364A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10010485A DE10010485C2 (en) 2000-03-03 2000-03-03 Process for the production of highly homogeneous, large-format single crystals from calcium fluoride and their use
DE10010485 2000-03-03
PCT/DE2001/000789 WO2001064977A1 (en) 2000-03-03 2001-03-02 Method for producing crystals and/or crystal materials containing fluorine

Publications (1)

Publication Number Publication Date
AU2001246364A1 true AU2001246364A1 (en) 2001-09-12

Family

ID=7633435

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001246364A Abandoned AU2001246364A1 (en) 2000-03-03 2001-03-02 Method for producing crystals and/or crystal materials containing fluorine

Country Status (7)

Country Link
US (2) US20030089306A1 (en)
EP (2) EP1130136B1 (en)
JP (2) JP2003525197A (en)
AT (1) ATE226651T1 (en)
AU (1) AU2001246364A1 (en)
DE (2) DE10010485C2 (en)
WO (1) WO2001064977A1 (en)

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US20030075778A1 (en) * 1997-10-01 2003-04-24 Patrick Klersy Programmable resistance memory element and method for making same
JP2002255686A (en) * 2001-02-26 2002-09-11 Canon Inc Calcium fluoride crystal and manufacturing method and device thereof
GB0118567D0 (en) * 2001-07-31 2001-09-19 Autoglym Improvements in or relating to organic material
GB0118738D0 (en) * 2001-08-01 2001-09-26 Autoglym Improvements in or relating to additives
DE10142649A1 (en) 2001-08-31 2003-04-24 Schott Glas Process for the manufacture of unbreakable calcium fluoride single crystals and their use
JP4204824B2 (en) * 2001-09-20 2009-01-07 新明和工業株式会社 Optical system
US20030070606A1 (en) * 2001-10-05 2003-04-17 Leblond Nicolas Preparation of feedstock of alkaline earth and alkali metal fluorides
JP3741208B2 (en) * 2001-11-29 2006-02-01 株式会社ニコン Optical member for optical lithography and evaluation method thereof
JP2003309059A (en) * 2002-04-17 2003-10-31 Nikon Corp Projection optical system and manufacturing method thereof, projection aligner, and exposure method
RU2002115062A (en) * 2002-05-31 2004-02-20 Корнинг Инкорпорейтид (Us) METHOD FOR GROWING CALCIUM FLUORIDE SINGLE CRYSTALS
JP4078161B2 (en) * 2002-09-12 2008-04-23 キヤノン株式会社 Fluorite and its manufacturing method
RU2003133471A (en) * 2002-11-19 2005-05-10 Токуяма Корпорейшн (Jp) Grown Calcium Fluoride Single Crystal
WO2004079058A1 (en) * 2003-02-28 2004-09-16 Saint-Gobain Ceramics & Plastics Inc. Annealing method for halide crystal
WO2004086089A1 (en) * 2003-03-24 2004-10-07 Hokushin Corporation Fluoride single crystal material for thermoluminescence dosimeter and thermoluminescence dosimeter
US20050044802A1 (en) * 2003-08-27 2005-03-03 Bellman Robert A. Method and module for improving the lifetime of metal fluoride optical elements
DE102004003829A1 (en) * 2004-01-26 2005-08-18 Schott Ag A method for cleaning crystal material and for producing crystals, an apparatus therefor and the use of the crystals thus obtained
DE102004008753A1 (en) 2004-02-23 2005-09-08 Schott Ag Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits
DE102004008752A1 (en) * 2004-02-23 2005-09-08 Schott Ag Production of large volume CaF 2 single crystals for use as optical devices with an optical axis parallel to the (100) or (110) crystal axis
DE102004008754A1 (en) 2004-02-23 2005-09-08 Schott Ag Production of low-stress, non-(111) -oriented, large-volume single crystals with low stress birefringence and homogeneous refractive index, and their use
DE102004008749A1 (en) 2004-02-23 2005-09-08 Schott Ag A method for producing a large-scale CaF 2 single crystal with low scattering and improved laser stability, and such a crystal and its use
US7883578B2 (en) 2004-02-23 2011-02-08 Hellma Materials Gmbh & Co. Kg Process for preparing CaF2 lens blanks especially for 193 nm and 157 nm lithography with minimized deffects
US6982001B2 (en) * 2004-05-28 2006-01-03 Corning Incorporated Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
US7541115B1 (en) 2004-11-15 2009-06-02 Kla-Tencor Technologies Corporation Use of calcium fluoride substrate for lithography masks
DE102005010654A1 (en) * 2005-03-08 2006-09-14 Schott Ag Production of high-homogeneous, tension-poor and large volume calcium fluoride single crystal e.g. for production of lenses, prisms and optical components for deep ultraviolet photolithography, comprises cooling crystal after its breeding
US20060201412A1 (en) * 2005-03-08 2006-09-14 Christian Poetisch Method of making highly uniform low-stress single crystals with reduced scattering
US20060249072A1 (en) * 2005-05-05 2006-11-09 Csillag Frank J Method of synthesizing a fluoride growth material for improved outgassing
JP4591236B2 (en) * 2005-06-29 2010-12-01 日立化成工業株式会社 Method for producing fluoride single crystal
US7604906B1 (en) 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
CN101311354B (en) * 2008-04-29 2011-12-28 烁光特晶科技有限公司 Process for controlling color of crystal
US20110061587A1 (en) * 2008-05-16 2011-03-17 Sumito Ishizu Method of producing pretreated metal fluorides and fluoride crystals
US9322954B2 (en) 2010-07-22 2016-04-26 Nihon Kessho Kogaku Co., Ltd. Fluorite production method
CN104695025A (en) * 2013-12-05 2015-06-10 长春理工大学 Thermal shock-resistant rapid-heating CaF2 crystal annealing apparatus
CN103643301A (en) * 2013-12-20 2014-03-19 中国科学院上海硅酸盐研究所 Method for annealing large-size calcium fluoride crystal

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DE213514C (en)
US2550173A (en) * 1949-10-28 1951-04-24 Harshaw Chem Corp Process for purification of calcium fluoride and lithium fluoride and manufacture ofmacrocrystals thereof
US4128589A (en) * 1977-06-22 1978-12-05 Hughes Aircraft Company Generation of CF4 from Teflon for reactive atmosphere processing and growth of metal fluorides
DD213514A1 (en) * 1978-11-30 1984-09-12 Zeiss Jena Veb Carl PROCESS FOR PREPARING CALCIUM FLUORIDE CRYSTALS FOR OPTICAL PURPOSES
US5277889A (en) * 1983-10-21 1994-01-11 Corning Incorporated Method for depositing pure metal halide compositions
US4857293A (en) * 1984-12-27 1989-08-15 Hughes Aircraft Company Process for the preparation of ultrapure heavy metal fluorides
US4761302A (en) * 1987-05-01 1988-08-02 The United States Department Of Energy Fluorination of amorphous thin-film materials with xenon fluoride
US5252259A (en) * 1991-04-22 1993-10-12 Hercules Incorporated Purification of sulfur hexafluoride
JP3337638B2 (en) * 1997-03-31 2002-10-21 キヤノン株式会社 Method for producing fluoride crystal and method for producing optical component
JP3969865B2 (en) * 1997-10-24 2007-09-05 キヤノン株式会社 Method for producing fluoride crystals
DE69910863T2 (en) * 1998-02-26 2004-07-15 Nikon Corp. Process for the preparation of calcium fluoride and calcium fluoride for photolithography
JP2000034193A (en) * 1998-07-16 2000-02-02 Nikon Corp Heat treatment and production of fluoride single crystal
US6350310B1 (en) * 1999-06-07 2002-02-26 Sandia Corporation Crystal growth and annealing for minimized residual stress
US6402840B1 (en) * 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US6352588B1 (en) * 1999-08-10 2002-03-05 Optoscint, Inc. Material purification
US20020062784A1 (en) * 1999-09-09 2002-05-30 Pandelisev Kiril A. Material purification
EP1154046B1 (en) * 2000-05-09 2011-12-28 Hellma Materials GmbH & Co. KG Fluoride crystalline optical lithography lens element blank
US6624390B1 (en) * 2001-07-20 2003-09-23 Cape Simulations, Inc. Substantially-uniform-temperature annealing

Also Published As

Publication number Publication date
JP2001354494A (en) 2001-12-25
US6364946B2 (en) 2002-04-02
WO2001064977A1 (en) 2001-09-07
US20030089306A1 (en) 2003-05-15
EP1130136A1 (en) 2001-09-05
DE10010485A1 (en) 2001-09-13
JP2003525197A (en) 2003-08-26
EP1130136B1 (en) 2002-10-23
ATE226651T1 (en) 2002-11-15
EP1264012A1 (en) 2002-12-11
US20010025598A1 (en) 2001-10-04
DE10010485C2 (en) 2002-10-02
DE50100043D1 (en) 2002-11-28

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