AU2001232823A1 - Method of diffusion bonding targets to backing plates - Google Patents

Method of diffusion bonding targets to backing plates

Info

Publication number
AU2001232823A1
AU2001232823A1 AU2001232823A AU3282301A AU2001232823A1 AU 2001232823 A1 AU2001232823 A1 AU 2001232823A1 AU 2001232823 A AU2001232823 A AU 2001232823A AU 3282301 A AU3282301 A AU 3282301A AU 2001232823 A1 AU2001232823 A1 AU 2001232823A1
Authority
AU
Australia
Prior art keywords
diffusion bonding
backing plates
bonding targets
targets
backing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232823A
Inventor
Tony Beier
Chris Parfeniuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2001232823A1 publication Critical patent/AU2001232823A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/1275—Next to Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24545—Containing metal or metal compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24554—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface including cellulosic or natural rubber component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Physical Vapour Deposition (AREA)
AU2001232823A 2000-01-20 2001-01-18 Method of diffusion bonding targets to backing plates Abandoned AU2001232823A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09488973 2000-01-20
US09/488,973 US6780794B2 (en) 2000-01-20 2000-01-20 Methods of bonding physical vapor deposition target materials to backing plate materials
PCT/US2001/001488 WO2001053560A1 (en) 2000-01-20 2001-01-18 Method of diffusion bonding targets to backing plates

Publications (1)

Publication Number Publication Date
AU2001232823A1 true AU2001232823A1 (en) 2001-07-31

Family

ID=23941879

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232823A Abandoned AU2001232823A1 (en) 2000-01-20 2001-01-18 Method of diffusion bonding targets to backing plates

Country Status (7)

Country Link
US (2) US6780794B2 (en)
EP (1) EP1252356A1 (en)
JP (1) JP2003520139A (en)
KR (1) KR20020084094A (en)
CN (1) CN1419608A (en)
AU (1) AU2001232823A1 (en)
WO (1) WO2001053560A1 (en)

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US6780794B2 (en) * 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6698647B1 (en) * 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
WO2004094688A1 (en) * 2003-04-02 2004-11-04 Honeywell International Inc. Pvd target/backing plate constructions; and methods of forming pvd target/backing plate constructions
KR20060033013A (en) * 2003-07-14 2006-04-18 토소우 에스엠디, 인크 Sputtering target assembly having low conductivity backing plate and method of making same
WO2005019493A2 (en) * 2003-08-11 2005-03-03 Honeywell International Inc. Target/backing plate constructions, and methods of forming them
US20090078570A1 (en) * 2003-08-11 2009-03-26 Wuwen Yi Target/backing plate constructions, and methods of forming target/backing plate constructions
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7754185B2 (en) * 2004-06-29 2010-07-13 H.C. Starck Inc. Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
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US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
CN101579782B (en) * 2009-04-20 2012-09-05 宁波江丰电子材料有限公司 Welding method of copper target blank and copper alloy backing plate
CN101648320B (en) * 2009-05-08 2012-06-27 宁波江丰电子材料有限公司 Welding method of target materials and back plates
CN102728944A (en) * 2011-04-01 2012-10-17 光洋应用材料科技股份有限公司 Diffusion bonding method
CN103548129B (en) * 2011-08-30 2017-05-10 Ev 集团 E·索尔纳有限责任公司 Method for permanently bonding wafers by a connecting layer by means of solid-state diffusion or phase transformation
CN104690487A (en) * 2013-12-09 2015-06-10 有研亿金新材料股份有限公司 Method for adhesively connecting target and backboard
JP6277309B2 (en) * 2016-07-13 2018-02-07 住友化学株式会社 Sputtering target manufacturing method and sputtering target
CN107717341A (en) * 2017-09-15 2018-02-23 中国原子能科学研究院 Modular metal constructs manufacturing process
CN107626880B (en) * 2017-09-15 2020-10-09 中国原子能科学研究院 Manufacturing process of large annular forging

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Also Published As

Publication number Publication date
US20020028538A1 (en) 2002-03-07
JP2003520139A (en) 2003-07-02
CN1419608A (en) 2003-05-21
WO2001053560A1 (en) 2001-07-26
EP1252356A1 (en) 2002-10-30
US6780794B2 (en) 2004-08-24
KR20020084094A (en) 2002-11-04
US6797362B2 (en) 2004-09-28
US20020039810A1 (en) 2002-04-04

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