AU2001229585A1 - Metal oxynitride capacitor barrier layer - Google Patents

Metal oxynitride capacitor barrier layer

Info

Publication number
AU2001229585A1
AU2001229585A1 AU2001229585A AU2958501A AU2001229585A1 AU 2001229585 A1 AU2001229585 A1 AU 2001229585A1 AU 2001229585 A AU2001229585 A AU 2001229585A AU 2958501 A AU2958501 A AU 2958501A AU 2001229585 A1 AU2001229585 A1 AU 2001229585A1
Authority
AU
Australia
Prior art keywords
barrier layer
metal oxynitride
capacitor barrier
oxynitride capacitor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001229585A
Inventor
Vishnu K. Agarwal
Sam Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001229585A1 publication Critical patent/AU2001229585A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
AU2001229585A 2000-01-18 2001-01-18 Metal oxynitride capacitor barrier layer Abandoned AU2001229585A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09484815 2000-01-18
US09/484,815 US6417537B1 (en) 2000-01-18 2000-01-18 Metal oxynitride capacitor barrier layer
PCT/US2001/001636 WO2001054172A1 (en) 2000-01-18 2001-01-18 Metal oxynitride capacitor barrier layer

Publications (1)

Publication Number Publication Date
AU2001229585A1 true AU2001229585A1 (en) 2001-07-31

Family

ID=23925726

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001229585A Abandoned AU2001229585A1 (en) 2000-01-18 2001-01-18 Metal oxynitride capacitor barrier layer

Country Status (3)

Country Link
US (7) US6417537B1 (en)
AU (1) AU2001229585A1 (en)
WO (1) WO2001054172A1 (en)

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US6664583B2 (en) 2003-12-16
US20040085802A1 (en) 2004-05-06
US6417537B1 (en) 2002-07-09
US6670256B2 (en) 2003-12-30
US20040070017A1 (en) 2004-04-15
WO2001054172A1 (en) 2001-07-26
US20020113280A1 (en) 2002-08-22
US7002202B2 (en) 2006-02-21
US7015527B2 (en) 2006-03-21
US20020122284A1 (en) 2002-09-05
US6631069B2 (en) 2003-10-07
US20020109198A1 (en) 2002-08-15
US6664584B2 (en) 2003-12-16
US20020022334A1 (en) 2002-02-21

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