AU1771800A - Method and arrangement for deposition of a semiconductor material - Google Patents

Method and arrangement for deposition of a semiconductor material

Info

Publication number
AU1771800A
AU1771800A AU17718/00A AU1771800A AU1771800A AU 1771800 A AU1771800 A AU 1771800A AU 17718/00 A AU17718/00 A AU 17718/00A AU 1771800 A AU1771800 A AU 1771800A AU 1771800 A AU1771800 A AU 1771800A
Authority
AU
Australia
Prior art keywords
deposition
arrangement
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU17718/00A
Inventor
Arnulf A. Jager-Waldau
Holger Jurgensen
Martha Christina Lux-Steiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Hahn Meitner Institut Berlin GmbH
Original Assignee
Aixtron SE
Hahn Meitner Institut Berlin GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE, Hahn Meitner Institut Berlin GmbH filed Critical Aixtron SE
Publication of AU1771800A publication Critical patent/AU1771800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
AU17718/00A 1998-11-20 1999-11-12 Method and arrangement for deposition of a semiconductor material Abandoned AU1771800A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19855021A DE19855021C1 (en) 1998-11-20 1998-11-20 Semiconductor material is deposited by chemical gas phase transport with horizontal and vertical close spacing of the substrate and source material during deposition
DE19855021 1998-11-20
PCT/DE1999/003665 WO2000031323A1 (en) 1998-11-20 1999-11-12 Method and arrangement for deposition of a semiconductor material

Publications (1)

Publication Number Publication Date
AU1771800A true AU1771800A (en) 2000-06-13

Family

ID=7889378

Family Applications (1)

Application Number Title Priority Date Filing Date
AU17718/00A Abandoned AU1771800A (en) 1998-11-20 1999-11-12 Method and arrangement for deposition of a semiconductor material

Country Status (3)

Country Link
AU (1) AU1771800A (en)
DE (1) DE19855021C1 (en)
WO (1) WO2000031323A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10141102A1 (en) * 2001-08-22 2003-04-03 Schott Glas Cadmium-free optical steep edge filters
DE10208911A1 (en) * 2002-02-27 2003-09-11 Hahn Meitner Inst Berlin Gmbh Process for depositing material from supply vessel comprises positioning the substrate and supply material in stack, introducing inert gas and reaction gas, expanding the gas flows, stopping the deposition, and cooling the substrate
DE10318440B3 (en) * 2003-04-15 2005-02-03 Hahn-Meitner-Institut Berlin Gmbh An electrochemical process for direct nanostructurable material deposition on a substrate and semiconductor device fabricated by the process
CN107119328B (en) * 2017-04-07 2019-06-21 湖南大学 A kind of stratiform WS with complicated helical structure2Two-dimension nano materials and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617381A (en) * 1968-07-30 1971-11-02 Rca Corp Method of epitaxially growing single crystal films of metal oxides
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
SU608376A1 (en) * 1976-04-12 1979-02-05 Государственный Ордена Октябрьской Революции Научно-Исследовательский И Проектный Институт Редкометаллической Промышленности "Гиредмет" Apparatus for epitaxial growth of semiconductor materials
GB1533645A (en) * 1976-11-05 1978-11-29 G Ni I P I Redkometallich Prom Method of producing mesa and threedimensional semiconductor structures with locally non-uniform composition and device for realizing same
GB1557605A (en) * 1977-01-11 1979-12-12 Gni I Pi Redkometallich Promys Method of appilying layers of source substance over recipient and device for realizing same
JPH0897159A (en) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk Method and system for epitaxial growth

Also Published As

Publication number Publication date
WO2000031323A1 (en) 2000-06-02
DE19855021C1 (en) 2000-05-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase