AU1762601A - Control of current spreading in semiconductor laser diodes - Google Patents

Control of current spreading in semiconductor laser diodes

Info

Publication number
AU1762601A
AU1762601A AU17626/01A AU1762601A AU1762601A AU 1762601 A AU1762601 A AU 1762601A AU 17626/01 A AU17626/01 A AU 17626/01A AU 1762601 A AU1762601 A AU 1762601A AU 1762601 A AU1762601 A AU 1762601A
Authority
AU
Australia
Prior art keywords
control
semiconductor laser
laser diodes
current spreading
spreading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU17626/01A
Inventor
John C. Connolly
Louis A. Dimarco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Princeton Lightwave LLC
Original Assignee
JOHN C CONNOLLY
LOUIS A DIMARCO
Princeton Lightwave LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JOHN C CONNOLLY, LOUIS A DIMARCO, Princeton Lightwave LLC filed Critical JOHN C CONNOLLY
Publication of AU1762601A publication Critical patent/AU1762601A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU17626/01A 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes Abandoned AU1762601A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16486499P 1999-11-12 1999-11-12
US60164864 1999-11-12
PCT/US2000/031048 WO2001035506A1 (en) 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes

Publications (1)

Publication Number Publication Date
AU1762601A true AU1762601A (en) 2001-06-06

Family

ID=22596409

Family Applications (1)

Application Number Title Priority Date Filing Date
AU17626/01A Abandoned AU1762601A (en) 1999-11-12 2000-11-10 Control of current spreading in semiconductor laser diodes

Country Status (5)

Country Link
EP (1) EP1247316A4 (en)
JP (1) JP2003515250A (en)
AU (1) AU1762601A (en)
CA (1) CA2388858A1 (en)
WO (1) WO2001035506A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100964399B1 (en) * 2003-03-08 2010-06-17 삼성전자주식회사 Semiconductor laser diode and semiconductor laser diode assembly adopting the same
US8597962B2 (en) 2010-03-31 2013-12-03 Varian Semiconductor Equipment Associates, Inc. Vertical structure LED current spreading by implanted regions
CN111082314B (en) * 2019-12-11 2021-10-08 中国科学院长春光学精密机械与物理研究所 Semiconductor laser and preparation method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2533581B2 (en) * 1987-11-16 1996-09-11 日本電信電話株式会社 Superlattice mixed crystal method
US5219785A (en) * 1989-01-27 1993-06-15 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
JPH07118570B2 (en) * 1993-02-01 1995-12-18 日本電気株式会社 Surface emitting device and manufacturing method thereof
JPH06326419A (en) * 1993-04-20 1994-11-25 Xerox Corp Monolithic semiconductor luminescence array
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region
US5696784A (en) * 1996-04-19 1997-12-09 Opto Power Corporation Reduced mode laser and method of fabrication
US6044098A (en) * 1997-08-29 2000-03-28 Xerox Corporation Deep native oxide confined ridge waveguide semiconductor lasers

Also Published As

Publication number Publication date
WO2001035506A9 (en) 2002-05-23
JP2003515250A (en) 2003-04-22
EP1247316A2 (en) 2002-10-09
EP1247316A4 (en) 2006-01-04
WO2001035506A1 (en) 2001-05-17
CA2388858A1 (en) 2001-05-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase