AU1762601A - Control of current spreading in semiconductor laser diodes - Google Patents
Control of current spreading in semiconductor laser diodesInfo
- Publication number
- AU1762601A AU1762601A AU17626/01A AU1762601A AU1762601A AU 1762601 A AU1762601 A AU 1762601A AU 17626/01 A AU17626/01 A AU 17626/01A AU 1762601 A AU1762601 A AU 1762601A AU 1762601 A AU1762601 A AU 1762601A
- Authority
- AU
- Australia
- Prior art keywords
- control
- semiconductor laser
- laser diodes
- current spreading
- spreading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16486499P | 1999-11-12 | 1999-11-12 | |
US60164864 | 1999-11-12 | ||
PCT/US2000/031048 WO2001035506A1 (en) | 1999-11-12 | 2000-11-10 | Control of current spreading in semiconductor laser diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
AU1762601A true AU1762601A (en) | 2001-06-06 |
Family
ID=22596409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU17626/01A Abandoned AU1762601A (en) | 1999-11-12 | 2000-11-10 | Control of current spreading in semiconductor laser diodes |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1247316A4 (en) |
JP (1) | JP2003515250A (en) |
AU (1) | AU1762601A (en) |
CA (1) | CA2388858A1 (en) |
WO (1) | WO2001035506A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100964399B1 (en) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | Semiconductor laser diode and semiconductor laser diode assembly adopting the same |
US8597962B2 (en) | 2010-03-31 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Vertical structure LED current spreading by implanted regions |
CN111082314B (en) * | 2019-12-11 | 2021-10-08 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser and preparation method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2533581B2 (en) * | 1987-11-16 | 1996-09-11 | 日本電信電話株式会社 | Superlattice mixed crystal method |
US5219785A (en) * | 1989-01-27 | 1993-06-15 | Spectra Diode Laboratories, Inc. | Method of forming current barriers in semiconductor lasers |
US5138626A (en) * | 1990-09-12 | 1992-08-11 | Hughes Aircraft Company | Ridge-waveguide buried-heterostructure laser and method of fabrication |
JPH07118570B2 (en) * | 1993-02-01 | 1995-12-18 | 日本電気株式会社 | Surface emitting device and manufacturing method thereof |
JPH06326419A (en) * | 1993-04-20 | 1994-11-25 | Xerox Corp | Monolithic semiconductor luminescence array |
US5804461A (en) * | 1994-12-22 | 1998-09-08 | Polaroid Corporation | Laser diode with an ion-implant region |
US5696784A (en) * | 1996-04-19 | 1997-12-09 | Opto Power Corporation | Reduced mode laser and method of fabrication |
US6044098A (en) * | 1997-08-29 | 2000-03-28 | Xerox Corporation | Deep native oxide confined ridge waveguide semiconductor lasers |
-
2000
- 2000-11-10 JP JP2001537143A patent/JP2003515250A/en active Pending
- 2000-11-10 CA CA002388858A patent/CA2388858A1/en not_active Abandoned
- 2000-11-10 EP EP00980351A patent/EP1247316A4/en not_active Withdrawn
- 2000-11-10 AU AU17626/01A patent/AU1762601A/en not_active Abandoned
- 2000-11-10 WO PCT/US2000/031048 patent/WO2001035506A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2001035506A9 (en) | 2002-05-23 |
JP2003515250A (en) | 2003-04-22 |
EP1247316A2 (en) | 2002-10-09 |
EP1247316A4 (en) | 2006-01-04 |
WO2001035506A1 (en) | 2001-05-17 |
CA2388858A1 (en) | 2001-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |