AU1181597A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
AU1181597A
AU1181597A AU11815/97A AU1181597A AU1181597A AU 1181597 A AU1181597 A AU 1181597A AU 11815/97 A AU11815/97 A AU 11815/97A AU 1181597 A AU1181597 A AU 1181597A AU 1181597 A AU1181597 A AU 1181597A
Authority
AU
Australia
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU11815/97A
Inventor
David Alistair Hinchley
Patrick Reginald Palmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd CUTS
Original Assignee
Cambridge University Technical Services Ltd CUTS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge University Technical Services Ltd CUTS filed Critical Cambridge University Technical Services Ltd CUTS
Publication of AU1181597A publication Critical patent/AU1181597A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
AU11815/97A 1995-12-12 1996-12-12 Semiconductor device Abandoned AU1181597A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9525363 1995-12-12
GBGB9525363.9A GB9525363D0 (en) 1995-12-12 1995-12-12 Semiconductor device
PCT/GB1996/003082 WO1997022150A1 (en) 1995-12-12 1996-12-12 Semiconductor device

Publications (1)

Publication Number Publication Date
AU1181597A true AU1181597A (en) 1997-07-03

Family

ID=10785280

Family Applications (1)

Application Number Title Priority Date Filing Date
AU11815/97A Abandoned AU1181597A (en) 1995-12-12 1996-12-12 Semiconductor device

Country Status (3)

Country Link
AU (1) AU1181597A (en)
GB (1) GB9525363D0 (en)
WO (1) WO1997022150A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT995940B (en) * 1973-09-24 1975-11-20 Rca Corp TYRISTOR
EP0280536B1 (en) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Turn-on driving technique for insulated gate thyristor
DE3902300C3 (en) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Shutdown thyristor
JPH0421211A (en) * 1990-05-16 1992-01-24 Toshiba Corp Method and device for driving semiconductor element

Also Published As

Publication number Publication date
WO1997022150A1 (en) 1997-06-19
GB9525363D0 (en) 1996-02-14

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