ATE74227T1 - Vorrichtung und verfahren zur verminderung der wafer-aufladung bei der ionenimplantation. - Google Patents

Vorrichtung und verfahren zur verminderung der wafer-aufladung bei der ionenimplantation.

Info

Publication number
ATE74227T1
ATE74227T1 AT88304230T AT88304230T ATE74227T1 AT E74227 T1 ATE74227 T1 AT E74227T1 AT 88304230 T AT88304230 T AT 88304230T AT 88304230 T AT88304230 T AT 88304230T AT E74227 T1 ATE74227 T1 AT E74227T1
Authority
AT
Austria
Prior art keywords
ion beam
target
electrode means
post
flood gun
Prior art date
Application number
AT88304230T
Other languages
English (en)
Inventor
Anthony Renau
Stephen Moffatt
Frederick Plumb
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE74227T1 publication Critical patent/ATE74227T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Particle Accelerators (AREA)
AT88304230T 1987-05-13 1988-05-10 Vorrichtung und verfahren zur verminderung der wafer-aufladung bei der ionenimplantation. ATE74227T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/050,586 US4825087A (en) 1987-05-13 1987-05-13 System and methods for wafer charge reduction for ion implantation
EP88304230A EP0291279B1 (de) 1987-05-13 1988-05-10 Vorrichtung und Verfahren zur Verminderung der Wafer-Aufladung bei der Ionenimplantation

Publications (1)

Publication Number Publication Date
ATE74227T1 true ATE74227T1 (de) 1992-04-15

Family

ID=21966123

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88304230T ATE74227T1 (de) 1987-05-13 1988-05-10 Vorrichtung und verfahren zur verminderung der wafer-aufladung bei der ionenimplantation.

Country Status (6)

Country Link
US (1) US4825087A (de)
EP (1) EP0291279B1 (de)
JP (2) JPH0817088B2 (de)
AT (1) ATE74227T1 (de)
DE (1) DE3869466D1 (de)
ES (1) ES2030502T3 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886971A (en) * 1987-03-13 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Ion beam irradiating apparatus including ion neutralizer
JPH01220350A (ja) * 1988-02-26 1989-09-04 Hitachi Ltd 帯電抑制方法及びその装置を用いた粒子線照射装置
JP2704438B2 (ja) * 1989-09-04 1998-01-26 東京エレクトロン株式会社 イオン注入装置
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
JP3092717B2 (ja) * 1990-03-02 2000-09-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入システムのための電荷中性化装置
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
EP0604011A1 (de) * 1992-12-23 1994-06-29 Advanced Micro Devices, Inc. Vorrichtung und Verfahren zur Ionenimplantation
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
GB2343547B (en) * 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with substrate neutralizer
DE19655206C2 (de) * 1995-11-08 2003-02-20 Applied Materials Inc Ionenimplantationsanlage mit verbesserter Feldkontrolle
DE19655207C2 (de) * 1995-11-08 2003-05-15 Applied Materials Inc Ionenimplantationsanlage mit Abbremslinsenanordnung
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
US5856674A (en) * 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
GB2382717B (en) 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
US6476399B1 (en) * 2000-09-01 2002-11-05 Axcelis Technologies, Inc. System and method for removing contaminant particles relative to an ion beam
US6852990B1 (en) 2001-06-29 2005-02-08 Advanced Micro Devices, Inc. Electrostatic discharge depolarization using high density plasma
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
KR100606902B1 (ko) * 2004-12-24 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조 방법
US20080073553A1 (en) * 2006-02-13 2008-03-27 Ibis Technology Corporation Ion beam profiler
US7476877B2 (en) * 2006-02-14 2009-01-13 Varian Semiconductor Equipment Associates, Inc. Wafer charge monitoring
US7723707B2 (en) * 2007-07-23 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma injection
US7800083B2 (en) 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
SG174927A1 (en) 2009-04-13 2011-12-29 Applied Materials Inc Modification of magnetic properties of films using ion and neutral beam implantation
US9892931B2 (en) * 2013-10-14 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing apparatus and method thereof
WO2018227668A1 (zh) * 2017-06-16 2018-12-20 上海集成电路研发中心有限公司 一种离子注入系统
CN111816540B (zh) * 2020-08-26 2023-02-03 上海华虹宏力半导体制造有限公司 离子注入方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
US4249077A (en) * 1978-08-04 1981-02-03 Crawford Charles K Ion charge neutralization for electron beam devices
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
US4684848A (en) * 1983-09-26 1987-08-04 Kaufman & Robinson, Inc. Broad-beam electron source
JPH0766763B2 (ja) * 1987-03-09 1995-07-19 日本電信電話株式会社 イオン中和器

Also Published As

Publication number Publication date
EP0291279B1 (de) 1992-03-25
US4825087A (en) 1989-04-25
JPH0850876A (ja) 1996-02-20
JPH0817088B2 (ja) 1996-02-21
EP0291279A1 (de) 1988-11-17
JP2693405B2 (ja) 1997-12-24
JPS6486435A (en) 1989-03-31
ES2030502T3 (es) 1992-11-01
DE3869466D1 (de) 1992-04-30

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Legal Events

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