ATE72356T1 - Schema zum trennen einer bitzeile von einem leseverstaerker. - Google Patents
Schema zum trennen einer bitzeile von einem leseverstaerker.Info
- Publication number
- ATE72356T1 ATE72356T1 AT86400268T AT86400268T ATE72356T1 AT E72356 T1 ATE72356 T1 AT E72356T1 AT 86400268 T AT86400268 T AT 86400268T AT 86400268 T AT86400268 T AT 86400268T AT E72356 T1 ATE72356 T1 AT E72356T1
- Authority
- AT
- Austria
- Prior art keywords
- bit line
- disconnecting
- scheme
- reading amplifier
- sense amplifier
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/126—Virtual ground arrays
Landscapes
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/700,571 US4651305A (en) | 1985-02-11 | 1985-02-11 | Sense amplifier bit line isolation scheme |
EP86400268A EP0191699B1 (de) | 1985-02-11 | 1986-02-07 | Schema zum Trennen einer Bitzeile von einem Leseverstärker |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE72356T1 true ATE72356T1 (de) | 1992-02-15 |
Family
ID=24814021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT86400268T ATE72356T1 (de) | 1985-02-11 | 1986-02-07 | Schema zum trennen einer bitzeile von einem leseverstaerker. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4651305A (de) |
EP (1) | EP0191699B1 (de) |
AT (1) | ATE72356T1 (de) |
DE (1) | DE3683654D1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5099297A (en) * | 1988-02-05 | 1992-03-24 | Emanuel Hazani | EEPROM cell structure and architecture with programming and erase terminals shared between several cells |
US5784327A (en) * | 1991-06-12 | 1998-07-21 | Hazani; Emanuel | Memory cell array selection circuits |
JPH06119784A (ja) * | 1992-10-07 | 1994-04-28 | Hitachi Ltd | センスアンプとそれを用いたsramとマイクロプロセッサ |
US5377153A (en) * | 1992-11-30 | 1994-12-27 | Sgs-Thomson Microelectronics, Inc. | Virtual ground read only memory circuit |
FR2809526B1 (fr) * | 2000-05-24 | 2003-07-25 | St Microelectronics Sa | Memoire rom de taille reduite |
FR2881565B1 (fr) * | 2005-02-03 | 2007-08-24 | Atmel Corp | Circuits de selection de ligne binaire pour memoires non volatiles |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993917A (en) * | 1975-05-29 | 1976-11-23 | International Business Machines Corporation | Parameter independent FET sense amplifier |
US3983544A (en) * | 1975-08-25 | 1976-09-28 | International Business Machines Corporation | Split memory array sharing same sensing and bit decode circuitry |
US4169233A (en) * | 1978-02-24 | 1979-09-25 | Rockwell International Corporation | High performance CMOS sense amplifier |
DE3101520A1 (de) * | 1981-01-19 | 1982-08-26 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter halbleiterspeicher |
US4555777A (en) * | 1984-08-14 | 1985-11-26 | Texas Instruments Incorporated | Sense amplifier circuit for dynamic read/write memory |
-
1985
- 1985-02-11 US US06/700,571 patent/US4651305A/en not_active Expired - Lifetime
-
1986
- 1986-02-07 DE DE8686400268T patent/DE3683654D1/de not_active Expired - Fee Related
- 1986-02-07 EP EP86400268A patent/EP0191699B1/de not_active Expired
- 1986-02-07 AT AT86400268T patent/ATE72356T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0191699B1 (de) | 1992-01-29 |
EP0191699A3 (en) | 1989-03-08 |
EP0191699A2 (de) | 1986-08-20 |
DE3683654D1 (de) | 1992-03-12 |
US4651305A (en) | 1987-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |