ATE536637T1 - Verfahren zur musterung eines detektorglases und ein halbleiter-detektor mit einem gemusterten glas - Google Patents
Verfahren zur musterung eines detektorglases und ein halbleiter-detektor mit einem gemusterten glasInfo
- Publication number
- ATE536637T1 ATE536637T1 AT08167085T AT08167085T ATE536637T1 AT E536637 T1 ATE536637 T1 AT E536637T1 AT 08167085 T AT08167085 T AT 08167085T AT 08167085 T AT08167085 T AT 08167085T AT E536637 T1 ATE536637 T1 AT E536637T1
- Authority
- AT
- Austria
- Prior art keywords
- glass
- detector
- patterning
- patterned
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000011521 glass Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000000059 patterning Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08167085A EP2180530B1 (de) | 2008-10-21 | 2008-10-21 | Verfahren zur Musterung eines Detektorglases und ein Halbleiter-Detektor mit einem gemusterten Glas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE536637T1 true ATE536637T1 (de) | 2011-12-15 |
Family
ID=40459611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08167085T ATE536637T1 (de) | 2008-10-21 | 2008-10-21 | Verfahren zur musterung eines detektorglases und ein halbleiter-detektor mit einem gemusterten glas |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP2180530B1 (de) |
| AT (1) | ATE536637T1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108291975A (zh) * | 2015-11-19 | 2018-07-17 | 皇家飞利浦有限公司 | 像素体积约束的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6162658A (en) * | 1996-10-14 | 2000-12-19 | Unisearch Limited | Metallization of buried contact solar cells |
| US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
| US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
| WO2005060011A1 (ja) * | 2003-12-16 | 2005-06-30 | National University Corporation Shizuoka University | 広域エネルギーレンジ放射線検出器及び製造方法 |
-
2008
- 2008-10-21 EP EP08167085A patent/EP2180530B1/de not_active Not-in-force
- 2008-10-21 AT AT08167085T patent/ATE536637T1/de active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2180530A1 (de) | 2010-04-28 |
| EP2180530B1 (de) | 2011-12-07 |
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