ATE526685T1 - Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit - Google Patents

Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit

Info

Publication number
ATE526685T1
ATE526685T1 AT05257881T AT05257881T ATE526685T1 AT E526685 T1 ATE526685 T1 AT E526685T1 AT 05257881 T AT05257881 T AT 05257881T AT 05257881 T AT05257881 T AT 05257881T AT E526685 T1 ATE526685 T1 AT E526685T1
Authority
AT
Austria
Prior art keywords
image sensor
semiconductor substrate
layer semiconductor
infrared sensitivity
improved infrared
Prior art date
Application number
AT05257881T
Other languages
English (en)
Inventor
Howard E Rhodes
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE526685T1 publication Critical patent/ATE526685T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
AT05257881T 2005-01-18 2005-12-20 Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit ATE526685T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/038,594 US20060157806A1 (en) 2005-01-18 2005-01-18 Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response

Publications (1)

Publication Number Publication Date
ATE526685T1 true ATE526685T1 (de) 2011-10-15

Family

ID=36061375

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05257881T ATE526685T1 (de) 2005-01-18 2005-12-20 Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit

Country Status (5)

Country Link
US (1) US20060157806A1 (de)
EP (1) EP1681722B1 (de)
CN (1) CN1828917B (de)
AT (1) ATE526685T1 (de)
TW (1) TWI305414B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100625944B1 (ko) * 2005-06-30 2006-09-18 매그나칩 반도체 유한회사 씨모스 이미지 센서의 포토다이오드 및 그의 제조 방법
JP4984634B2 (ja) * 2005-07-21 2012-07-25 ソニー株式会社 物理情報取得方法および物理情報取得装置
US7943471B1 (en) * 2006-05-15 2011-05-17 Globalfoundries Inc. Diode with asymmetric silicon germanium anode
KR101513406B1 (ko) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 감지 및 표시를 위한 방법 및 장치
US7825465B2 (en) 2007-12-13 2010-11-02 Fairchild Semiconductor Corporation Structure and method for forming field effect transistor with low resistance channel region
CN101459184B (zh) * 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 在cmos上感测图像的系统和方法
CN100595934C (zh) * 2008-01-23 2010-03-24 厦门大学 基于虚衬底的硅锗异质结光晶体管
US10636929B2 (en) 2009-04-30 2020-04-28 Massachusetts Institute Of Technology Cross-talk suppression in Geiger-mode avalanche photodiodes
US20110169991A1 (en) * 2010-01-08 2011-07-14 Omnivision Technologies, Inc. Image sensor with epitaxially self-aligned photo sensors
US8716701B2 (en) 2010-05-24 2014-05-06 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
MX2013015214A (es) 2011-06-30 2014-03-21 Nanoholdings Llc Metodo y aparato para detectar radiacion infrarroja con ganancia.
JP2013157367A (ja) * 2012-01-27 2013-08-15 Sony Corp 撮像素子、製造装置および方法、並びに、撮像装置
JP2016513361A (ja) * 2013-01-25 2016-05-12 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッドＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 溶液処理法による硫化鉛光検出器を用いた新規の赤外線画像センサー
CN104078472B (zh) * 2013-03-27 2017-02-01 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器及其制造方法
US9153717B2 (en) 2013-08-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated photo-sensitive device with gradated buffer layer
JP6302216B2 (ja) * 2013-11-08 2018-03-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9806122B2 (en) 2014-07-25 2017-10-31 Omnivision Technologies, Inc. Visible and infrared image sensor
TWI621253B (zh) * 2014-11-13 2018-04-11 光澄科技股份有限公司 光吸收裝置及其形成方法
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
JP2016126472A (ja) * 2014-12-26 2016-07-11 株式会社東芝 心拍数検出装置及びそれを用いた顔認識システム
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
US9859325B2 (en) * 2015-11-13 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium
CN113725242A (zh) * 2020-05-26 2021-11-30 意法半导体(克洛尔2)公司 具有钉扎光电二极管的集成光学传感器
FR3111019B1 (fr) * 2020-05-26 2022-07-22 St Microelectronics Crolles 2 Sas Capteur optique intégré à photodiodes pincées
WO2023175762A1 (ja) * 2022-03-16 2023-09-21 株式会社オプトハブ 光検出装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Heteroepitaxial layers with low defect density and arbitrary network parameter
US6403975B1 (en) * 1996-04-09 2002-06-11 Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
KR19990023221A (ko) * 1997-08-20 1999-03-25 포만 제프리 엘 감광성 소자, 능동 픽셀 센서 소자, 능동 픽셀 센서 감광성 소자 및 능동 픽셀 센서 장치
US6943051B2 (en) * 2000-10-19 2005-09-13 Quantum Semiconductor Llc Method of fabricating heterojunction photodiodes integrated with CMOS
US6730551B2 (en) * 2001-08-06 2004-05-04 Massachusetts Institute Of Technology Formation of planar strained layers
US6980748B2 (en) * 2001-08-30 2005-12-27 International Business Machines Corporation SiGe or germanium flip chip optical receiver
GB0216075D0 (en) * 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
US6919552B2 (en) * 2002-11-25 2005-07-19 Agilent Technologies, Inc. Optical detector and method for detecting incident light
US6921934B2 (en) * 2003-03-28 2005-07-26 Micron Technology, Inc. Double pinned photodiode for CMOS APS and method of formation
US7122392B2 (en) * 2003-06-30 2006-10-17 Intel Corporation Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
US7164182B2 (en) * 2003-07-07 2007-01-16 Micron Technology, Inc. Pixel with strained silicon layer for improving carrier mobility and blue response in imagers

Also Published As

Publication number Publication date
TW200627635A (en) 2006-08-01
EP1681722A3 (de) 2007-05-30
CN1828917B (zh) 2012-11-21
CN1828917A (zh) 2006-09-06
EP1681722B1 (de) 2011-09-28
US20060157806A1 (en) 2006-07-20
TWI305414B (en) 2009-01-11
EP1681722A2 (de) 2006-07-19

Similar Documents

Publication Publication Date Title
ATE526685T1 (de) Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit
WO2006001978A3 (en) Integrated three-dimensional magnetic sensing device and fabrication method
DK1960771T3 (da) Sensorer
DE602005004717D1 (de) Halbleiter-Bildsensor, Kamera und Herstellungsverfahren dafür
ATE436012T1 (de) Vorrichtung zum auswerten biochemischer proben
DE602006007921D1 (de) Sensor und Aufzeichnungsgerät mit demselben
ATE443266T1 (de) Stromsensor
FR2895377B1 (fr) Conditionnement avec capteur integre
WO2007041007A3 (en) Magnetic tunnel junction temperature sensors
ATE483170T1 (de) Magnetoresistive sensorvorrichtung und verfahren zur herstellung einer solchen magnetoresistiven sensorvorrichtung
EP2299493A3 (de) Herstellung von Silizium und Germanium Nanodrähten integrierte auf einem Substrat
WO2008039212A3 (en) Optical sensing based on surface plasmon resonances in nanostructures
DE602006006500D1 (de) Infrarotkamera mit Feuchtigkeitssensor
EP2154714A3 (de) Temperatursensor mit Pufferschicht
DE602005012887D1 (de) Gassensorvorrichtung mit verringerter Einstellzeit
DE602005016199D1 (de) Mechanismus zur Rückkehr in Nullstellung und Eingabevorrichtung damit
FR2901409B1 (fr) Dispositif electroluminescent et procede de fabrication de celui-ci
TW200611421A (en) Method for forming image sensors with improved sensitivity
DE602006015244D1 (de) Positionssteuerungsvorrichtung, Messvorrichtung und Bearbeitungsvorrichtung
DK1875237T3 (da) Docetaxel-immunassay
ITSV20060021A1 (it) Sensore di temperatura
FR2894029B1 (fr) Dispositif de detection de rapport air-carburant.
DE602005000859D1 (de) Dehnungssensor und entsprechendes Herstellungsverfahren.
FR2911690B1 (fr) Dispositif d'amplification magnetique comportant un capteur magnetique a sensibilite longitudinale
WO2007038144A3 (en) Radiation sensor device and method

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties