ATE526685T1 - Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit - Google Patents

Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit

Info

Publication number
ATE526685T1
ATE526685T1 AT05257881T AT05257881T ATE526685T1 AT E526685 T1 ATE526685 T1 AT E526685T1 AT 05257881 T AT05257881 T AT 05257881T AT 05257881 T AT05257881 T AT 05257881T AT E526685 T1 ATE526685 T1 AT E526685T1
Authority
AT
Austria
Prior art keywords
image sensor
semiconductor substrate
layer semiconductor
infrared sensitivity
improved infrared
Prior art date
Application number
AT05257881T
Other languages
English (en)
Inventor
Howard E Rhodes
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE526685T1 publication Critical patent/ATE526685T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2218—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group IV-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT05257881T 2005-01-18 2005-12-20 Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit ATE526685T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/038,594 US20060157806A1 (en) 2005-01-18 2005-01-18 Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response

Publications (1)

Publication Number Publication Date
ATE526685T1 true ATE526685T1 (de) 2011-10-15

Family

ID=36061375

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05257881T ATE526685T1 (de) 2005-01-18 2005-12-20 Mehrschichtiges halbleitersubstrat und darauf gebildeter bildsensor zur verbesserten infrarotempfindlichkeit

Country Status (5)

Country Link
US (1) US20060157806A1 (de)
EP (1) EP1681722B1 (de)
CN (1) CN1828917B (de)
AT (1) ATE526685T1 (de)
TW (1) TWI305414B (de)

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US7825465B2 (en) * 2007-12-13 2010-11-02 Fairchild Semiconductor Corporation Structure and method for forming field effect transistor with low resistance channel region
CN101459184B (zh) * 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 在cmos上感测图像的系统和方法
CN100595934C (zh) * 2008-01-23 2010-03-24 厦门大学 基于虚衬底的硅锗异质结光晶体管
US10636929B2 (en) 2009-04-30 2020-04-28 Massachusetts Institute Of Technology Cross-talk suppression in Geiger-mode avalanche photodiodes
US20110169991A1 (en) * 2010-01-08 2011-07-14 Omnivision Technologies, Inc. Image sensor with epitaxially self-aligned photo sensors
JP5778261B2 (ja) 2010-05-24 2015-09-16 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク．Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｔｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 赤外光アップコンバージョンデバイス上に電荷遮断層を設けるための方法および装置
RU2014102650A (ru) 2011-06-30 2015-08-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Усиливающий инфракрасный фотодетектор и его применение для обнаружения ик-излучения
JP2013157367A (ja) * 2012-01-27 2013-08-15 Sony Corp 撮像素子、製造装置および方法、並びに、撮像装置
WO2014178923A2 (en) * 2013-01-25 2014-11-06 University Of Florida Research Foundation, Inc. A novel ir image sensor using a solution processed pbs photodetector
CN104078472B (zh) * 2013-03-27 2017-02-01 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器及其制造方法
US9153717B2 (en) 2013-08-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated photo-sensitive device with gradated buffer layer
JP6302216B2 (ja) * 2013-11-08 2018-03-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9806122B2 (en) 2014-07-25 2017-10-31 Omnivision Technologies, Inc. Visible and infrared image sensor
KR20170077241A (ko) 2014-11-13 2017-07-05 아티룩스 인코포레이티드 광 흡수 장치
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
JP2016126472A (ja) * 2014-12-26 2016-07-11 株式会社東芝 心拍数検出装置及びそれを用いた顔認識システム
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
US9859325B2 (en) * 2015-11-13 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium
FR3111019B1 (fr) * 2020-05-26 2022-07-22 St Microelectronics Crolles 2 Sas Capteur optique intégré à photodiodes pincées
CN113725242B (zh) * 2020-05-26 2025-04-25 意法半导体(克洛尔2)公司 具有钉扎光电二极管的集成光学传感器
US20220252725A1 (en) * 2021-02-05 2022-08-11 Artilux, Inc. Lidar Sensor with Dynamic Projection Patterns
EP4496010B1 (de) * 2022-03-16 2026-05-06 Optohub Co., Ltd Lichtdetektionsvorrichtung

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Also Published As

Publication number Publication date
US20060157806A1 (en) 2006-07-20
TW200627635A (en) 2006-08-01
CN1828917A (zh) 2006-09-06
EP1681722A3 (de) 2007-05-30
TWI305414B (en) 2009-01-11
EP1681722A2 (de) 2006-07-19
EP1681722B1 (de) 2011-09-28
CN1828917B (zh) 2012-11-21

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